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    2SD999 Search Results

    2SD999 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SD999-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD999-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD999-T2-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD999(0)-T1-AY Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation

    2SD999 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD999 Kexin NPN Silicon Epitaxial Transistor Original PDF
    2SD999 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD999 NEC Semiconductor Selection Guide Original PDF
    2SD999 TY Semiconductor NPN Silicon Epitaxial Transistor - SOT-89 Original PDF
    2SD999 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD999 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD999 Unknown Scan PDF
    2SD999 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD999 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD999 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD999 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD999 NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Scan PDF
    2SD999 NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Scan PDF
    2SD999CK NEC NPN Silicon Epitaxial Transistor Power Mini Mold Scan PDF
    2SD999CL NEC NPN Silicon Epitaxial Transistor Power Mini Mold Scan PDF
    2SD999CM NEC NPN Silicon Epitaxial Transistor Power Mini Mold Scan PDF
    2SD999-T1 NEC Silicon Transistor Scan PDF
    2SD999-T2 NEC Silicon Transistor Scan PDF

    2SD999 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N0201

    Abstract: No abstract text available
    Text: Data Sheet N0201S R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201R. VCEO = 30 V IC DC = 1.0 A Miniature package SOT-23F (2SD999: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0201S-T1-AT


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    PDF N0201S R07DS0719EJ0100 N0201R. OT-23F 2SD999: N0201S-T1-AT 3000p/reel PVSF0003ZA-A 0126g N0201

    2SD999

    Abstract: No abstract text available
    Text: 2SD999 2SD999 TRANSISTOR NPN SOT-89 FEATURES Power dissipation PCM: 0.5 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 1 2 3. EMITTER 3 TJ, Tstg: -55℃ to +150℃


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    PDF 2SD999 OT-89 100mA 2SD999

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD999 Features World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


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    PDF 2SD999 OT-89.

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD999 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage


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    PDF OT-89 2SD999 OT-89 100mA

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0201S R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201R. VCEO = 30 V IC DC = 1.0 A Miniature package SOT-23F (2SD999: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0201S-T1-AT


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    PDF N0201S R07DS0719EJ0100 N0201R. OT-23F 2SD999: N0201S-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g

    Marking CM

    Abstract: 2SD999 hFE CLASSIFICATION Marking SMD TRANSISTOR MARKING cm
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD999 Features World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


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    PDF 2SD999 OT-89. Marking CM 2SD999 hFE CLASSIFICATION Marking SMD TRANSISTOR MARKING cm

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD999 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity 2. COLLECTOR


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    PDF OT-89-3L OT-89-3L 2SD999 100mA

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    pin configuration NPN transistor c828

    Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


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    PDF 875ule. 1000pF 200mils BCM5705M NO266 pin configuration NPN transistor c828 w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode

    ZENER D30

    Abstract: aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


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    PDF 875C38 1/16W 1000pF 200mils BCM5705M NO266 ZENER D30 aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    TFK 082

    Abstract: tfk 521 TFK U 111 B tfk 140 / TC ST 1000 2SD999 DA SOT-89 TFK 212
    Text: = T — • ^ 5 / — h S ilico n T r a n s is to r 2SD999 m # ^-fi ! mm o f ë M M M J£ W i? E ÿ v * , :£ -tr-y H Ì W Ì g : ) a ì ^ t h Ì i f f l i - S T i 1 'c O 2SB798<Î; n > 7 °'J p< > ? ') § ito 1.5 + 0.1 Î Ê * Î f i * Æ f t (T a =


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    PDF 2SD999 2SB798< PWS10 OT-89) TFK 082 tfk 521 TFK U 111 B tfk 140 / TC ST 1000 2SD999 DA SOT-89 TFK 212

    2SD999

    Abstract: No abstract text available
    Text: NEC SILICO N TRA N SISTO R ELECTRON DEVICE 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTIO N The 2SD999 is designed fo r audio frequency power am p lifie r application, especially in H ybrid Integrated Circuits. FE A TU R E S • W orld Standard M iniature Package


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    PDF 2SD999 2SD999 2SB798

    IEI-1213

    Abstract: 2SD999 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide
    Text: DATA SHEET SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


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    PDF 2SD999 2SD999 OT-89 2SB798 IEI-1213 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide

    2SB798

    Abstract: 2SD999
    Text: S IL IC O N TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N T h e 2 S D 9 9 9 is d e sign e d fo r a u d io fre q u e n c y p o w e r a m p lifie r a p p lic a tio n , e sp e c ia lly in H y b r id Inte grated Circuits.


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    PDF 2SD999 2SD999 2SB798

    S490A

    Abstract: 2SB798 2SD999
    Text: 5 s— S • 5 /— K NEC ' > 1 h =7 Silicon T ra n s is to r 2SB798 mm a & v t, ij-ty m m , h ^ c o f g J l ì i è i b i j f f l i i f t a T t c 0 2SD999 Ì a > 7 °'J X > 9 ') T '" t „ 1.5 + 0.1 T a = 25 °C ) III g n iy 9 9 n v 9 =t V -30 V -y 9 [ S U E


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    PDF 2SD999 OT-89) PWS10 CycleS50 S490A 2SB798 2SD999

    2sa1154

    Abstract: 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335
    Text: N E C ELECTRONICS INC C Transistors ET b4S7SES OOOblDl 1 STC iààau M i T -33- 0 / •Wim - W - I J .4 I U Ü Í I J W 3 B ! U W M P H 1 »VJW» '»J-M* 1 ■JM ■ r t n ïi « t i n t o • Darlington Power Transistors '^ U c VceoM (DC |A1 \ Package \


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    PDF T-33-0/ O-126 NTD985 NTB794 NTD986 NTB795 NTD411 T0-220AB NTD560 2sa1154 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335

    nec 2sc3157

    Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
    Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419


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    PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678

    2SC3444

    Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
    Text: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4


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    PDF 2SD1586 2SD1587 2SD1588 2SD1589 2SD1590 2SD1592 2SD1593 25D1594 2SD1595 2SD1598 2SC3444 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1932 2sd1944

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


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    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SC2719

    Abstract: 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795
    Text: N E C ELECTRONICS INC STC C Transistors ET *fS*B U .Jjl.W bMSTSES DOOblOl 1 D atom [v j w -I»W1 -i»'. I.U I •JU iM à ta iiita iib É ttâ d K i • D arlington Pow er Transistors '"~'''S=-Jc DC [A] Vceom \ Package \ 60 TO-126 80 TO-126 3.0 2.0 1.5


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    PDF T-33-0/ O-126 NTD985 NTB794 NTD986 NTB795 NTD411 T0-220AB NTD560 2SC2719 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795