2SC3419 Search Results

2SC3419 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3419	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1356	Original	PDF
2SC3419	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC3419	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3419	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3419	Unknown	Cross Reference Datasheet	Scan	PDF
2SC3419	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3419	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3419	Unknown		Scan	PDF
2SC3419	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3419	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3419	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3419	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC3419	Toshiba	Silicon NPN transistor for medium power amplifier applications	Scan	PDF
2SC3419	Toshiba	TO-126 Package Transistor	Scan	PDF

2SC3419-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3419O	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF
2SC3419-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3419Y	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF

2SC3419 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C3419 Abstract: 2SC3419 2SA1356 Text: 2SC3419 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3419 ○ 中電力増幅用 • 単位: mm : VCE (sat) = 0.25 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) • 2SA1356 とコンプリメンタリになります。	Original	PDF	2SC3419 2SA1356 20070701-JA C3419 2SC3419 2SA1356
c3419 Abstract: 2SC3419 2SA1356 MA61 Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356	Original	PDF	2SC3419 2SA1356 c3419 2SC3419 2SA1356 MA61
c3419 Abstract: No abstract text available Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356	Original	PDF	2SC3419 2SA1356 c3419
c3419 Abstract: 2SC3419 2SA1356 Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356	Original	PDF	2SC3419 2SA1356 c3419 2SC3419 2SA1356
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
nec 2sc3157 Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678 Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419	OCR Scan	PDF	2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
2SC3419 Abstract: 2SA1356 Text: 2SC3419 TO SH IBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) “ 0.25V (Typ.) (In = 500mA, Ig = 50mA) High Collector Power Dissipation : P0 = 1.2W (Ta = 25°C)	OCR Scan	PDF	2SC3419 500mA, 2SA1356
2SC1216 Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162 Text: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358	OCR Scan	PDF	2sd425 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc1843 2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2sc1162
2SC3419 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE 2SC3419 MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.i±ai . Low Saturation Voltage : VcE sat =0.25V(Typ.) (Ic=500mA, •2 lB=50mA) . High Collector Power Dissipation : Pc=1.2W (Ta=25°C) . Complementary to 2SA1356	OCR Scan	PDF	2SC3419 500mA, 2SA1356 500mA 2SC3419
Untitled Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER APPLICATIONS. • • • Low Saturation Voltage : v CE(sat) = -0 .3 2 V (Typ.)(Ic = -500m A , Ig = -50m A ) High Collector Power Dissipation : P c = 1.2W (Ta = 25°C) Complementary to 2SC3419	OCR Scan	PDF	-500m 2SC3419 --10mA, 800mA --500mA, --50mA 2SA1356
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3419 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • Low Saturation Voltage : VCE (sat)= 0.25V (Typ.) (Ic = 500mA, Ig = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)	OCR Scan	PDF	2SC3419 500mA, 2SA1356 961001EAA2'
2SA1356 Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE 2SA1356 AUDIO POWER AMPLIFIER APPLICATIONS. Unit in FEATURES; . L o w S a turation Voltage : V CE sat =-0.32V(Typ.) (Ic=-500mA, . H i g h Collector Power D i s sipation IB=-5CtaA) : P c =1.2W (Ta=25°C) . C omplementary to 2SC3419	OCR Scan	PDF	2SA1356 -500mA, 2SC3419 -10mA, -50mA -800mA -50mA -500mA 2SA1356
2SC3419 Abstract: 2SA1356 Text: TOSHIBA 2SC3419 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 53.1 ±0.1 Low Saturation Voltage : VCE (Sat) —0.25V (Typ.) (1^ = 500mA, lB = 50mA) High Collector Power Dissipation : P0 = 1.2W (Ta = 25°C)	OCR Scan	PDF	2SC3419 500mA, 2SA1356 961001EAA2' 2SC3419 2SA1356
Untitled Abstract: No abstract text available Text: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • • • m ä" ìli 1.0MAX. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	PDF	2SC3419 2SA1356 961001EAA2'

2SA135 Abstract: 2SA1356 2SC3419 Text: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS. • • • m ä" Hi 1.0MAX. M A XIM U M RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	PDF	2SC3419 500mA, 2SA1356 961001EAA2' 2SA135 2SA1356 2SC3419
2SC3419 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3419 M E D IU M PO W ER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) = 0-25V (Typ.) (Ic = 500mA, lB = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) Complementary to 2SA1356	OCR Scan	PDF	2SC3419 500mA, 2SA1356 500mA 2SC3419
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
2SK 150A Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	PDF	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
2SC3424 Abstract: 80240 2SA1361 Text: -3 5 TO-126 ( j S ) PACKAGE S E R IE S o n T0-126<JSD JZ IffH. —“ CD o (0 N ro ' in i° Application . . VCEQ Type No. v PNP NPN Audio Drive T V Chroma Out I 'V I 2SC3423 j 2SC3424 2SA1360 T V Chroma Out v 2SC3619 I 1 2SA1361 • T V Chroma Out \|	OCR Scan	PDF	O-126 2SC3423 2SC3424 2SA1360 2SA1356 20MIN 2SC3620 2SC3419 2SC3425 2SC3421 80240 2SA1361
2SC3421 Abstract: 2sd526 2SC46C 2SC4614 2SD467 2SC3423 2SC503 2sc2233 2sc2061 2SC2235 Text: m % Type No. * 2SC 477 * 2SC 478 * 2SC 481 ' * 2SC 483 * 2SC m / * 2SC 485 . * 2SC 4ÖÖ - 2SC 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC 2SC * * 489 490 491 / 492 493 X 494 z 1' 495 ' 436 - 1' 497 # 2SC 2SC 2SC * 2SC 500 * 502 ^ 503 .r 504 Í * 505 *"•	OCR Scan	PDF	2SC46C 2SC1359 2SC2058 2SC1815 2SC460 2SC1318 2SC1740 2SC1398 2SD1264 2SC2497A 2SC3421 2sd526 2SC46C 2SC4614 2SD467 2SC3423 2SC503 2sc2233 2sc2061 2SC2235
2sc3943 Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039 Text: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —	OCR Scan	PDF	2SC4400 2SC4253 2SC3936 2SC4258 2SC4098 2SC4117 2SD1821 2SC4102 2SC4413 2SD1824 2sc3943 2SC4117 2sc2060 2SC2553 2SC3170 2SC2242 2SC3536 4181A 2SC3039
C3422 Abstract: AAAM strobo 2SC3420 2SD1508 2SD1509 Text: Powered T O -1 26 ¡ D O CO N N tn O Application Electronic-Library •c v CEO '-/P&'V. Type No. NPN PNP Ì Audio Drive 2SC3423 ! 2SA1360 T V Chroma Out 2SC3424 ! 2SA1361 . .1 (A VcE*(sat) w VX. ;W frp g,'. •' Tc=2?C V CE >C (V) (W> (V) (A) >c (V> (A)	OCR Scan	PDF	2SC3420 2SD1508 2SD1509 T-33-OÃ C3422 AAAM strobo 2SC3420 2SD1509
2SA1317 Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319 Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60	OCR Scan	PDF	2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1317 2SA1348 2SC3331 2sc3345 2SC3398 2SA1319

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2SC3419 Search Results

2SC3419 Datasheets (18)

2SC3419 Datasheets Context Search

C3419

c3419

c3419

c3419

sn76131

nec 2sc3157

2SC3419

2SC1216

2SC3419

Untitled

Untitled

2SA1356

2SC3419

Untitled

2SA135

2SC3419

b1375

2SK 150A

Transistor 2SA 2SB 2SC 2SD

2SC3424

2SC3421

2sc3943

C3422

2SA1317