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    2SA1012 Search Results

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    2SA1012 Price and Stock

    Diotec Semiconductor AG 2SA1012R

    BJT DPAK -50V -5000MA PNP
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    DigiKey 2SA1012R Bulk 2,500
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    Mouser Electronics 2SA1012R 2,470
    • 1 $1.61
    • 10 $1.26
    • 100 $0.756
    • 1000 $0.724
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    Onlinecomponents.com 2SA1012R
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    TME 2SA1012R 1
    • 1 $0.758
    • 10 $0.6
    • 100 $0.429
    • 1000 $0.4
    • 10000 $0.4
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    Micro Commercial Components 2SA1012-AP

    TRANS PNP 50V 5A TO220AB
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    DigiKey 2SA1012-AP Ammo Pack
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    Toshiba America Electronic Components 2SA1012

    POWER BIPOLAR TRANSISTOR, 5A I(C), 50V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1012 74
    • 1 $11.01
    • 10 $5.505
    • 100 $4.771
    • 1000 $4.771
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    2SA1012 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1012 Various Russian Datasheets Transistor Original PDF
    2SA1012 Mospec POWER TRANSISTORS(5A,50V,25W) Scan PDF
    2SA1012 Mospec PNP Silicon Power Transistor Scan PDF
    2SA1012 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1012 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1012 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SA1012 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1012 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1012 Unknown Cross Reference Datasheet Scan PDF
    2SA1012 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1012 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1012 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1012 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA1012 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1012 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1012 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1012 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1012 Toshiba TRANS GP BJT PNP 50V 5A 3(2-10A1A) Scan PDF
    2SA1012 Toshiba SILICON PNP EPITAXIAL TYPE TRANSISTOR Scan PDF

    2SA1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sa1012

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220


    Original     		PDF 2SA1012 2SC2562 O-220 2SA1012L 2SA1012-TA3-T 2SA1012L-TA3-T O-220 QW-R209-008 2sa1012

    2SA1012

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER


    Original     		PDF 2SA1012 2SC2562 O-251 QW-R213-012 2SA1012

    2sc2562

    Abstract: 2SA1012
    Text: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		PDF 2SC2562 O-220 2SA1012 O-220) 2sc2562 2SA1012

    transistor 04 N 70 BP

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • • • • PNP Plastic-Encapsulate Transistor Capable of 25 Watts of Power Dissipation.


    Original     		PDF 2SA1012 -50Vdc, transistor 04 N 70 BP

    25WATTS

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • • • • • • PNP Plastic-Encapsulate Transistor Capable of 25 Watts of Power Dissipation.


    Original     		PDF 2SA1012 -50Vdc, -60and 25WATTS

    2sc2562

    Abstract: 2SA1012
    Text: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage


    Original     		PDF 2SA1012 O-220 2SC2562 O-220 -10mA 2sc2562 2SA1012

    a1012 transistor

    Abstract: transistor A1012 a1012 a1012* transistor
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		PDF 2SA1012 A1012 2SC2562 O-220 QW-R203-015 a1012 transistor transistor A1012 a1012* transistor

    2SA1012

    Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.


    Original     		PDF 2SA1012 2SC2562 2SA1012 transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		PDF O-220 2SA1012 2SC2562 150mA

    2SA1012

    Abstract: 2sc2562
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . „ FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0 s(Typ.) *Complementary To 2SC2562 „ ORDERING INFORMATION


    Original     		PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R 2SA1012 2sc2562

    2SA1012

    Abstract: 50V 1A PNP power transistor
    Text: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features — 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562


    Original     		PDF 2SA1012 O-220 O-220 2SC2562 tp300S, -100A, 150mA 50V 1A PNP power transistor

    2sa1012

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
    Text: SavantIC Semiconductor Product Specification 2SA1012 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		PDF 2SA1012 O-220 2SD2562 O-220) 2sa1012 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR PNP FEATURES z HIGH CURRENT SWITCHING APPLICATIONS. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		PDF O-252 2SA1012 2SC2562 O-252-2L 150mA

    2SA1012

    Abstract: hFE is transistor to220
    Text: ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		PDF 2SA1012 O-220 2SA1012 hFE is transistor to220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION .  FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0s(Typ.) *Complementary To 2SC2562  ORDERING INFORMATION


    Original     		PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R

    2SA1012

    Abstract: 2Sa1012 transistor 2sc2562 TO-220 PNP
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors TO-220 PNP 1. BASE FEATURES z HIGH CURRENT SWITCHING APPLICATIONS. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		PDF O-220 2SA1012 2SC2562 150mA tp300S, 2SA1012 2Sa1012 transistor 2sc2562 TO-220 PNP

    2sc2562

    Abstract: 2SA1012 2SA1012 jmnic
    Text: JMnic Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2SC2562 O-220 2SA1012 O-220) 2sc2562 2SA1012 2SA1012 jmnic

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 Q1 2 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= “ 0*4V (Max.) at 1q = -3 A Hieh Speed Switching Time : tc,+rr= l.Ows(Tvd.)


    OCR Scan     		PDF 2SA1012 2SC2562. O-220AB SC-46 2-10A1A --10mA, 200x200x2mm

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2sa10

    Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
    Text: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044


    OCR Scan     		PDF Ta-25iC) SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1041 2SA1042 2SA1043 2sa10 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1013 2SA1015 2SA1035 2SA1016K

    2SA1012

    Abstract: ABE+407
    Text: Æ â m o s p e c PNP SILICON POWER TRANSISTORS PNP .designed for use in power amplifier applications 2SA1012 FEATURES: * Low Collector-Emitter Saturation Voltage v C E s a tf0 -4 V(Max @ Ic=3.0A,Ib=0.15A * DC Current Gain hFE= 70-240@lc= 1.0A * High Speed Switching Time


    OCR Scan     		PDF 2SA1012 2SA1012 ABE+407

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1012 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : ts^ = 1 .0 (as(Typ.)


    OCR Scan     		PDF 2SA1012 2SC2562. 50X50X2mm

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan     		PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    2SC256

    Abstract: 2SA1012
    Text: SILICON PNP EPITAXIAL TYPE 2SA1012 INDUSTRIAL A P P L I CATIONS Unit in ram HIGH CURRENT S WITCHING APPLICATIONS. 0 3 .6 ± 0 .2 FEATURES: o L o w C ollector Saturation Voltage n * .a3 : V c E s a t = - 0 .4 V(Max.) at I C= - 3A CO High Speed Switching Time : tgtg = l .O u s ( T y p .)


    OCR Scan     		PDF 2SA1012 2SC256 2SA1012