Untitled
Abstract: No abstract text available
Text: 2N5152S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)
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2N5152S
O205AD)
19-Jun-02
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2N5152SMD
Abstract: No abstract text available
Text: 2N5152SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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2N5152SMD
O276AB)
15-Aug-02
2N5152SMD
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Untitled
Abstract: No abstract text available
Text: 2N5152SMD05 2N5154SMD05 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 )
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2N5152SMD05
2N5154SMD05
2N5152SMD05
2N5154SMD05
2N5151SMD05
2N5153SMD05
respectively-55Â
20MHz
300ms
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Untitled
Abstract: No abstract text available
Text: 2N5152S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)
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2N5152S
O205AD)
17-Jul-02
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2N5152SMD05
Abstract: 2N5154SMD05 2N5151SMD05 2N5153SMD05 SMD05
Text: 2N5152SMD05 2N5154SMD05 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 )
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2N5152SMD05
2N5154SMD05
2N5152SMD05
2N5154SMD05
2N5151SMD05
2N5153SMD05
20MHz
300ms
SMD05
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2N5152S
Abstract: No abstract text available
Text: 2N5152S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)
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2N5152S
O205AD)
1-Aug-02
2N5152S
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2N5152
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N5152" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5152 NPN TO39 80V 5A 30 100 5/2.5 60MHz
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2N5152"
2N5152
2N5152A
2N5152A-JQR-B
2N5152-JQR-B
2N5152S
2N5152SMD
2N5152SMD05
O276AB)
O276AA)
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Untitled
Abstract: No abstract text available
Text: 2N5151SMD05 2N5153SMD05 MECHANICAL DATA Dimensions in mm inches PNP BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 )
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2N5151SMD05
2N5153SMD05
2N5153SMD05
2N5152SMD05
2N5154SMD05
20MHz
300ms
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b0951
Abstract: 2SC647 BLX19 BLX16 25G60 2n5979 2N4310 ST+T8+1060
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 • 50 60 65 70 75 · · 80 ·85 90 · 95 912 Ie Max (A) V(BA)CEO (V) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max PD Max TOper Max (a) (a) (W) (OC) Package Style >= 5 A, (Co nt' d)
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2N5153SMD05
Abstract: 2N5151SMD05 2N5152SMD05 2N5154SMD05 SMD05
Text: 2N5151SMD05 2N5153SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) PNP BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS
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2N5151SMD05
2N5153SMD05
2N5151SMD05
2N5153SMD05
2N5152SMD05
2N5154SMD05
SMD05
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bav90
Abstract: 1N400* series LCC4 MOSFETS 2N4033CSM4 2N2222ACSM LCC3 transistors 2N3904CSM 2N3867S BAT54CSM
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C E R A M I C LCC1 S U R FAC E LCC3 LCC2 M O U N T LCC4 SMD1 SMD05 Small Signal Power Transistors, MOSFETs, Diodes Transistors, MOSFETs, Diodes, Voltage Regulators LCC1 LCC2
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SMD05
2N918CSM
2N930CSM
2N2222ACSM
2N2369ACSM
2N2484CSM
2N2605ACSM
2N2894ACSM
2N2904ACSM
2N2907ACSM
bav90
1N400* series
LCC4
MOSFETS
2N4033CSM4
LCC3 transistors
2N3904CSM
2N3867S
BAT54CSM
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2n5253
Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321
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OGOG43e!
2N5152S
2N5153
2N5153S
2N5154
2N5154S
2N5239
2N5240
2N5241
2N5252
2n5253
2N5596
2N5321
2N5357
2N5498
lta 301
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Untitled
Abstract: No abstract text available
Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C
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2N4938DCSM
2N4939
2N4939DSCM
2N4999
2N5000
2N5000-SM
2N5001
2N5001-SM
2N5001S
2N5002
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2N4033
Abstract: No abstract text available
Text: i - t •¡j^yty, gjgtf,*-1-‘wwgt^ 37E » Type No. Polarity Package v CEO •c cont 2N4001 2N4026 2N4027 2N4028 2N4029 BS-0 BS-0 BS-0 BS-0 NPN PNP PNP PNP PNP T039 T018 TO18 T018 T018 100 60 80 60 80 1 1 1 1 1 40-120 30 min 30min 75 min 75 min 2 5 5 5 5
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2N4001
2N4026
2N4027
2N4028
2N4029
2N4030
2N4031
2N4032
2N4033
2N4036
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