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    MOSFETS Search Results

    MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    MOSFETS Price and Stock

    Nexperia 2N7002NXAKR

    MOSFETs 2N7002NXAK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002NXAKR Reel 7,650,000 3,000
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002,215 Reel 4,866,000 3,000
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    Nexperia 2N7002/HAMR

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002/HAMR Reel 3,081,000 3,000
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    Nexperia BSS84AK,215

    MOSFETs SOT23 P CHAN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84AK,215 Reel 2,301,000 3,000
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    Nexperia BSS138P,215

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS138P,215 Reel 207,000 3,000
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    Find more MOSFETS price and stock on Findchips.com

    MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)


    Original     		PDF TPC8075

    Untitled

    Abstract: No abstract text available
    Text: TPN22006NH MOSFETs Silicon N-channel MOS U-MOS-H TPN22006NH 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)


    Original     		PDF TPN22006NH

    TL1454

    Abstract: No abstract text available
    Text: TL1454, TL1454Y DUAL-CHANNEL PULSE-WIDTH-MODULATION PWM CONTROL CIRCUIT SLVS086B – APRIL 1995 – REVISED NOVEMBER 1997 D D D D D D D D, N OR PW PACKAGE (TOP VIEW) Two Complete PWM Control Circuits Outputs Drive MOSFETs Directly Oscillator Frequency . . . 50 kHz to 2 MHz


    Original     		PDF TL1454, TL1454Y SLVS086B TL1454 TL1454EVM-085 SLVA061 SLVA057 SLVA059 SLVU012,

    Untitled

    Abstract: No abstract text available
    Text: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)


    Original     		PDF TPH8R80ANH

    Untitled

    Abstract: No abstract text available
    Text: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS  TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)


    Original     		PDF TK20S06K3L

    Untitled

    Abstract: No abstract text available
    Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK8A25DA O-220SIS

    TK39N60W

    Abstract: No abstract text available
    Text: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		PDF TK39N60W O-247 TK39N60W

    TPCP8105

    Abstract: No abstract text available
    Text: TPCP8105 MOSFETs Silicon P-Channel MOS U-MOS TPCP8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCP8105 TPCP8105

    SSM6J414TU

    Abstract: No abstract text available
    Text: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)


    Original     		PDF SSM6J414TU SSM6J414TU

    TPN30008NH

    Abstract: No abstract text available
    Text: TPN30008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN30008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.1 nC (typ.)


    Original     		PDF TPN30008NH TPN30008NH

    TL1454

    Abstract: No abstract text available
    Text: TL1454, TL1454Y DUAL-CHANNEL PULSE-WIDTH-MODULATION PWM CONTROL CIRCUIT SLVS086B – APRIL 1995 – REVISED NOVEMBER 1997 D D D D D D D D, N OR PW PACKAGE (TOP VIEW) Two Complete PWM Control Circuits Outputs Drive MOSFETs Directly Oscillator Frequency . . . 50 kHz to 2 MHz


    Original     		PDF TL1454, TL1454Y SLVS086B TL1454 TL1454EVM-085 et/20001221/11272000/TXII/11272000/tl1454

    TK72A

    Abstract: No abstract text available
    Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)


    Original     		PDF TK72A12N1 O-220SIS TK72A

    Untitled

    Abstract: No abstract text available
    Text: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)


    Original     		PDF TPCA8063-H

    Untitled

    Abstract: No abstract text available
    Text: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)


    Original     		PDF TK80F06K3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)


    Original     		PDF TJ150F04M3L O-220SM

    tk8a60

    Abstract: No abstract text available
    Text: TK8A60W MOSFETs Silicon N-Channel MOS DTMOS TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		PDF TK8A60W O-220SIS tk8a60

    Untitled

    Abstract: No abstract text available
    Text: TK16N60W MOSFETs Silicon N-Channel MOS DTMOS TK16N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		PDF TK16N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		PDF TK65E10N1 O-220

    TPCC8106

    Abstract: No abstract text available
    Text: TPCC8106 MOSFETs Silicon P-Channel MOS U-MOS TPCC8106 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V)


    Original     		PDF TPCC8106 TPCC8106

    TJ9A10M3

    Abstract: No abstract text available
    Text: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original     		PDF TJ9A10M3 O-220SIS TJ9A10M3

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DA MOSFETs Silicon N-Channel MOS π-MOS TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3)


    Original     		PDF TK4P60DA

    Untitled

    Abstract: No abstract text available
    Text: TPCP8305 MOSFETs Silicon P-Channel MOS U-MOS TPCP8305 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCP8305

    120v battery charger Schematic Diagram

    Abstract: schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V
    Text: y UNITRODE Advanced Low Voltage Boost Controller With Backup Charger UCC29401 UCC39401 ADVANCE INFORMATION FEATURES DESCRIPTION • Synchronous Conversion with Internal MOSFETs The UCC39401 is a multi-output single inductor synchronous boost control­ ler optimized to operate from a low input voltage such as a single or dual


    OCR Scan     		PDF 200mW UCC29401 UCC39401 UCC39401 120v battery charger Schematic Diagram schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V

    5v to 20v pwm amplifier 40khz

    Abstract: 100KRPM
    Text: UC1625 UC3625 U IM IT R O O E Brushless DC Motor Controller FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode DESCRIPTION The UC1625 and UC3625 motor controller ICs integrate most of


    OCR Scan     		PDF UC1625 UC3625 UC3625 140ns. 140ns 5v to 20v pwm amplifier 40khz 100KRPM