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Microchip Technology Inc 2N5303 NPN TRANSISTOR
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Microchip Technology Inc	2N5303			36 Weeks		1 $61.31 10 $61.31 100 $61.31 1000 $61.31 10000 $61.31	Buy Now

Onlinecomponents.com	2N5303					1 - 10 - 100 $54.36 1000 $54.36 10000 $54.36	Buy Now
NAC	2N5303	Tray			5	1 $62.56 10 $62.56 100 $57.62 1000 $53.4 10000 $53.4	Buy Now
Master Electronics	2N5303					1 - 10 - 100 $54.36 1000 $54.36 10000 $54.36	Buy Now
Microchip Technology Inc JAN2N5303 TRANS NPN 60V 20A TO3
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Microchip Technology Inc	JAN2N5303			36 Weeks		1 $149.38 10 $149.38 100 $149.38 1000 $149.38 10000 $149.38	Buy Now
NAC	JAN2N5303	Tray			2	1 $152.43 10 $152.43 100 $140.39 1000 $130.12 10000 $130.12	Buy Now

Master Electronics	JAN2N5303					1 - 10 - 100 $135.24 1000 $135.24 10000 $135.24	Buy Now
Microchip Technology Inc JANTX2N5303 TRANS NPN 80V 20A TO3
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Microchip Technology Inc	JANTX2N5303		2	36 Weeks		1 $172.94 10 $172.94 100 $172.94 1000 $172.94 10000 $172.94	Buy Now
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Master Electronics	JANTX2N5303					1 $505.483 10 $505.483 100 $156.57 1000 $156.57 10000 $156.57	Buy Now
Microchip Technology Inc JANTXV2N5303 TRANS NPN 60V 20A TO3
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Microchip Technology Inc	JANTXV2N5303			36 Weeks		1 $211.55 10 $211.55 100 $211.55 1000 $211.55 10000 $211.55	Buy Now
NAC	JANTXV2N5303	Tray			1	1 $215.87 10 $215.87 100 $198.83 1000 $184.28 10000 $184.28	Buy Now

Master Electronics	JANTXV2N5303					1 - 10 - 100 $191.53 1000 $191.53 10000 $191.53	Buy Now
Central Semiconductor Corp 2N5303-PBFREE TRANS NPN 80V 20A TO3
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DigiKey	2N5303-PBFREE	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2N5303 Datasheets (53)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5303	Central Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 20A TO-3	Original	PDF
2N5303	Microsemi	NPN Transistor	Original	PDF
2N5303	On Semiconductor	POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Original	PDF
2N5303	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Original	PDF
2N5303	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5303	API Electronics	Short form transistor data	Short Form	PDF
2N5303	Central Semiconductor	NPN Silicon Power Transistor, TO-3	Scan	PDF
2N5303	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5303	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5303	General Diode	Transistor Selection Guide	Scan	PDF
2N5303	General Electric	High current, high power, high speed N-P-N power transistor. 80V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Scan	PDF
2N5303	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5303	Mospec	POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Scan	PDF
2N5303	Mospec	NPN Silicon High-Power Transistor	Scan	PDF

2N5303	Motorola	The European Selection Data Book 1976	Scan	PDF
2N5303	Motorola	European Master Selection Guide 1986	Scan	PDF
2N5303	Motorola	Power Transistor Selection Guide	Scan	PDF
2N5303	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5303	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5303	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF

2N5303 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5301 Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745 Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS	Original	PDF	2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
2N5302 Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage	Original	PDF	MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV
Untitled Abstract: No abstract text available Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage	Original	PDF	MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;
2N5301 Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745 Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS	Original	PDF	2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745
2N5302 Abstract: 2N5303 jantx 2n5302 adc ic 1000C Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage	Original	PDF	2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic
2N5301 Abstract: 2N5302 2N5303 2n53 Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching	Original	PDF	2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53
Untitled Abstract: No abstract text available Text: 2N5303+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N5303
Untitled Abstract: No abstract text available Text: 2N5303+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N5303
2N5301 Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching	Original	PDF	2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange
2N5303 Abstract: No abstract text available Text: 2N5303 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5303 O204AA) 31-Jul-02 2N5303
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
TIP 110 transistor Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055 Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature	OCR Scan	PDF	2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
2N5303 Abstract: SPT5303 75 watt npn switching transistor Text: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps	OCR Scan	PDF	2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor
Untitled Abstract: No abstract text available Text: ÏÏÏ 3875081 G E SOLID D!T“\| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ \| ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power	OCR Scan	PDF	0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.

2N5302 Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303 Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302	OCR Scan	PDF	2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303
1501-33 Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882 Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001	OCR Scan	PDF	Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020
2N5301 Abstract: 2N5302 2N5303 RCA-2N5301 Text: ÏÏÏ 3875081 G E SOLID D!T“\|3fl75Dfll 0G173fii t^ \| ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power	OCR Scan	PDF	2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301
2n5302 Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi Dvlc . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)	OCR Scan	PDF	2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
2N5303 Abstract: NPN VCBO 80V Text: Data Sheet 2N5303 ^ - _ M g f t l i t MHi I l NPN SILICON POWER TRANSISTOR Sem iconductor Corp. JEDEC TO-3 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	2N5303 2N5303 NPN VCBO 80V
2n5253 Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154 Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321	OCR Scan	PDF	OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301
fu 5303 Abstract: 4410b Text: File Num ber 2N5301, 2N5302, 2N5303 1029 High-Current High-Power High-Speed N-P-N Power T ransistors TERMINAL DESIGNATIONS Feature«: • Specification tor h rE and VcE sat up to 30 A ■ Current gain-bandwidth pro d u ct h = 2 MHz min. at 1 A ■ Low saturation voltage with high beta	OCR Scan	PDF	2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b
Untitled Abstract: No abstract text available Text: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A	OCR Scan	PDF	2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303
2N5303 Abstract: 2n5302 2N530I 2N5302 EB 2N5301 Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS .FO R U SE IN P O W E R A M P L IF IE R AND SW ITCH IN G C IR C U IT S A PPLIC A TIO N S. H i g h C o l l e c t o r - E m i t t e r S u s t a in in g V o l t a g e ' C E O S U S	OCR Scan	PDF	2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB
2N5301 Abstract: No abstract text available Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H m C < < — r* m « in w FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398, 2N4399 I. g w S On 200 W at 25°C Case Temperature	OCR Scan	PDF	2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2NS303) 2N5301

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Microchip Technology Inc 2N5303

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2N5303 Datasheets (53)

2N5303 Datasheets Context Search

2N5301

2N5302

Untitled

2N5301

2N5302

2N5301

Untitled

Untitled

2N5301

2N5303

b1375

TIP 110 transistor

2N5303

Untitled

2N5302

1501-33

2N5301

2n5302

2N5303

2n5253

fu 5303

Untitled

2N5303

2N5301