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    Motorola Semiconductor Products 2N3713

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    Samsung Semiconductor 2N3713

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    ET 2N3713

    TRANSISTOR,BJT,NPN,60V V(BR)CEO,10A I(C),TO-3
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    2N3713 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3713 Comset Semiconductors Epitaxial-Base NPN - PNP - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3713 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3713 Advanced Semiconductor Silicon Transistors Scan PDF
    2N3713 Boca Semiconductor SILICON NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3713 Central Semiconductor BJT, NPN, Power Transistor, IC 10A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3713 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    2N3713 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N3713 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N3713 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3713 General Diode Transistor Selection Guide Scan PDF
    2N3713 General Transistor Power Transistor Selection Guide Scan PDF
    2N3713 Mospec 10 AMPERE POWER TRANSISTOR NPN SILICON 60-80 VOLTS 150 WATTS Scan PDF
    2N3713 Mospec POWER TRANSISTORS(10A,150W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3713 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3713 Motorola The European Selection Data Book 1976 Scan PDF
    2N3713 Motorola 10A Power Transistors Silicon NPN Scan PDF
    2N3713 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3713 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3713 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3713 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2N3713 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3792

    Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


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    PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 PNP 2N3791 2N3713 2N3714 2N3789 2N3790

    2N3716

    Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


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    PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 2N3714 2N3713 PNP 2N3791 2N3789 2N3790 NPN transistor 2n3713

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    MJ2955

    Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 MJ2955 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773

    2N5875

    Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4034 MJ4035 2N5875 BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B

    2N3713SMD

    Abstract: No abstract text available
    Text: 2N3713SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


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    PDF 2N3713SMD O276AB) 15-Aug-02 2N3713SMD

    2N2101

    Abstract: 2N3713 2N4130 2N5632 t031
    Text: industrial power transistors 134 SILICON NPN •TRANSISTORS 1 0 Amp TYPE NUMBER CASE SIZE 2N2101 2N3713 2N3714 2N3715 2N3716 2N4130 2N5632 2N5633 2N5634 80T7711 80T7712 80T7713 80T7714 80T7715 80T7716 SOT7731 80T7732 80T7733 80T7734 80T7735 80T7736 80T7741


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    PDF O-111 2N2101 2N3713 2N3714 2N3715 2N4130 2N5632 t031

    Untitled

    Abstract: No abstract text available
    Text: 2N3713 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N3713 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3713 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N3713 O204AA) 16-Jul-02

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2N4122

    Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
    Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741


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    PDF DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135

    2N3715

    Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
    Text: Data Sheet 2N3713 2N3714 2N3715 2N3716 Central" Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors d e s c r ip t io n


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3714 2N3716 2N3713, 2N3714) 2N2716 lc50a

    2N3716

    Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
    Text: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792


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    PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716 2N3713, 2N3792

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR COPTO} ^2 DË~|ôTbl7ab 0D3bSfil S9 61 72 & TEXAS INSTR OPTO D 62C 3 6 5 8 1 ' 2N3791 P-N-P SILICON POWER TRANSISTOR NOVEMBER 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With 2N3713 150 W at 25°C Case Temperature e 10 A Continuous Collector Current


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    PDF 2N3791 2N3713

    2N4004

    Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
    Text: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665


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    PDF O-111 TC-26Â 2N3789 2N3713 2N371S 2N3791 TIP5433 2NS940 O-111 2N3790 2N4004 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127

    NPN transistor SST 117

    Abstract: 2N3713 2N3714 J01B 2N3716 2N3715 L72B
    Text: T exas instr -c o p t o } Ta DE IflTblTEb 0D3bS71 □ | ~ 62C 36 57 1 Ô 3 6 1 7 2 6 TEXAS INSTR COPTO 2N3713,2N3714,2N3715,2N3716 N-P-N SILICON POWER TRANSISTORS F E B R U A R Y 1 9 6 8 - R E V IS E D O C T O B E R 1 9 8 4 150 W at 25° C Case Temperature


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    PDF 0D3bS71 2N3713 2N3714 2N3715 2N3716 2N3716 2N3714, NPN transistor SST 117 J01B L72B

    Untitled

    Abstract: No abstract text available
    Text: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N3743

    2N3716

    Abstract: 2N3714 2N3713 2N3715 2N3789 2N3792
    Text: ÆàMOS PEC SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas


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    PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716

    2N3790

    Abstract: 2N3789
    Text: TYPES 2N3789, 2N3790, 2N3791, 2N3792 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS F O R P O W ER -A M P LIFIER AND H IGH -SPEEO -SW ITCHIN G A P P LIC A TIO N S D ES IG N ED F O R C O M P LE M EN T A R Y USE WITH 2N3713 T H R U 2N3716 • 150 Watts at 25 C Case Temperature


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    PDF 2N3789, 2N3790, 2N3791, 2N3792 2N3713 2N3716 2N3790 2N3789

    2N3713

    Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
    Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz


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    PDF 2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1

    Untitled

    Abstract: No abstract text available
    Text: NEU ENGLAND SEMICONDUCTOR SIE I • b S b m i B 000005S 370 * N E S 2-50 A V ceo sus = 3 5 -5 0 0 V fr =0 .2 -5 0 MHz NPN TO-3 lc (M A X ) — Case 803 Case 804 Type No. 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447 2N3448 2N3713 2N3714 2N3715


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    PDF 000005S 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447

    2N3714

    Abstract: 2n2715 2N3713 2N3715 2N3716 2N3789 2M371
    Text: 2N3713 thru 2N3716 3<bi NPN - S IL IC O N N PN POW ER T R A N S IS T O R S . 10 A M P E R E . . . designed for m edium -speed switching and am plifier applications. P O W ER T R A N S IS T O R S These devices feature: I S IL IC O N NPN 60-80 VO LTS 150 W ATTS


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    PDF 2N3713 2N3716 2N3789-92 2N3715 2N3714 2N3716 2N3713, 2n2715 2N3789 2M371

    LM3661TL-1.40

    Abstract: 2N6057
    Text: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713


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