lf817
Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V
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SLA8004
100max
60max
60min
150min
35max
55min
80min
lf817
pnp 8 transistor array
pnp array
SLA8004
1/stv 9902
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2SC3519
Abstract: 2SC3519A transistor 2sc3519 2SA1386
Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A
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2SC3519/3519A
2SA1386/A)
2SC3519A
100max
160min
180min
50min
50typ
250typ
2SC3519
2SC3519A
transistor 2sc3519
2SA1386
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mitsubishi PM30CSJ060
Abstract: PM20CSJ060 PM30RSF060 PM30ctj060-3 pm10csj060 PM20CS PM15CSJ060 PM20CTM060 M060 M57146U-01
Text: MITSUBISHI HYBRID IC M57146U-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING 5.0 Lot No. 4-φ4.5 5.0 5.0 12 CN1 CN2 5.0 5.0 76.0±0.7 5.0 65.0±0.7 3 12 4 5 78 1 CN3 5.0 FEATURES ● Output . +15V, 50mAX3 +15V, 100mAX1
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M57146U-01
50mAX3
100mAX1
1500Vrms
M57146U-01
15VDC
380VDC.
100mA,
mitsubishi PM30CSJ060
PM20CSJ060
PM30RSF060
PM30ctj060-3
pm10csj060
PM20CS
PM15CSJ060
PM20CTM060
M060
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2SC3264
Abstract: 2SA1295 MP100M 2SA1295 2SC3264
Text: 2SC3264 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1295 •Electrical Characteristics Symbol Conditions 2SC3264 Unit VCB=230V 100max µA VEB=5V 100max µA IC=25mA 230min V 24.4±0.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A
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2SC3264
2SA1295)
MT-200
100max
230min
50min
60typ
2SC3264
2SA1295
MP100M
2SA1295 2SC3264
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Untitled
Abstract: No abstract text available
Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30
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2SC4073
Pulse10)
O220F)
100max
400min
10typ
30typ
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2SC4065
Abstract: TRANSISTOR SE 135
Text: Power Transistor 2SC4065 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB (Ta=25ºC) Unit µA mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5
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2SC4065
100max
60max
60min
50min
35max
24typ
180typ
2SC4065
TRANSISTOR SE 135
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Untitled
Abstract: No abstract text available
Text: Power Transistor 2SC3851 Electrical Characteristics External Dimensions FM20 full-mold 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 3.9 ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB (Ta=25ºC) Unit µA µA V Ratings 100max 100max 60min 40 to 320 0.5max 15typ 60typ
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2SC3851
100max
60min
15typ
60typ
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npn high voltage transistor 500v 8a
Abstract: 2SC4139 si50
Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj
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2SC4139
MT-100
100max
400min
10typ
85typ
Pulse30)
npn high voltage transistor 500v 8a
2SC4139
si50
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2SD2642
Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Text: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max
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2SD2642
100max
110min
5000min
60typ
55typ
O220F)
2SB1687)
2SD2642
2SD2642 equivalent
2sb1687
FM20
transistor 2SB1687
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2SD2641
Abstract: 2SB1685
Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA
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2SD2641
2SB1685)
100max
110min
5000min
60typ
55typ
2SD2641
2SB1685
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2SD2558
Abstract: No abstract text available
Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A
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2SD2558
FM100
100max
200min
15typ
110typ
2SD2558
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2SD2643
Abstract: 2SB1687 transistor 2SB1687
Text: C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1687 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions Ratings Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A
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2SD2643
2SB1687)
100max
FM100
110min
5000min
60typ
55typ
2SD2643
2SB1687
transistor 2SB1687
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2SC4518
Abstract: 2SC4518A FM20
Text: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE
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2SC4518/4518A
100max
O220F)
2SC4518
2SC4518A
550min
Pulse10)
50typ
2SC4518A
FM20
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2SC4299
Abstract: No abstract text available
Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max
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2SC4299
FM100
100max
800min
50typ
2SC4299
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2SC3856
Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)
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2SC3856
2SA1492)
MT-100
100max
180min
50min
20typ
300typ
2SC3856
2SA1492
2SA1492 2SC3856
DSA0016508
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2SD2560
Abstract: 2SB1647 DSA0016513
Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA
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2SD2560
2SB1647)
MT-100
100max
150min
5000min
70typ
120typ
2SD2560
2SB1647
DSA0016513
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DO41
Abstract: GS11
Text: C 26±0,5 C A +0,2 58 -0,8 3 A 100max > 0,6 A 26 ±0,5 >1,5 2+2,0 Ø3,5+0,1 Æ 3,5+0,1 deepth = 4±0,2 on both sides DO58 / 26K ø62,8 3,5 ±0,1 34 DO100 / 26K C 26+-0,5 > 1,0 DO75 / 26K 48-0,1 75-0,2 GS4 GS6 GS5 SW27 / M12 max.12 ø3,5x3,5 deep 14 C 26 +0,1
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100max
DO100
DO120
DO41
GS11
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Untitled
Abstract: No abstract text available
Text: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A
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2SC3179
2SA1262)
100max
60min
40min
15typ
60typ
MT-25
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2SC4706
Abstract: transistor 2sc4706 2sc4706 NPN Transistor
Text: 2SC4706 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA VCEO 600 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 600min V 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 130(Tc=25°C)
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2SC4706
MT-100
100max
600min
Pulse28)
160typ
2SC4706
transistor 2sc4706
2sc4706 NPN Transistor
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2SC3852A
Abstract: 2sc3852 FM20 transistor 2sc3852
Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A
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2SC3852/3852A
100max
60min
80min
500min
15typ
50typ
10max
2SC3852A
2SC3852
2SC3852A
2sc3852
FM20
transistor 2sc3852
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2SC3831
Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max
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2SC3831
Pulse20)
100max
500min
105typ
MT-100
2SC3831
vbe 12v, vce 600v NPN Transistor
transistor npn 12V 1A Collector Current
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2SD2562
Abstract: 2sb1649
Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2SD2562
2SB1649)
FM100
100max
150min
5000min
70typ
120typ
2SD2562
2sb1649
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2SC4073
Abstract: FM20 SE-05
Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2
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2SC4073
Pulse10)
100max
400min
10typ
30typ
O220F)
2SC4073
FM20
SE-05
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2SC4020
Abstract: 2SC4020 equivalent
Text: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VEBO 7 V V(BR)CEO 3(Pulse 6) A hFE IC µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat)
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2SC4020
100max
800min
MT-25
40typ
2SC4020
2SC4020 equivalent
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