lf817
Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V
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SLA8004
100max
60max
60min
150min
35max
55min
80min
lf817
pnp 8 transistor array
pnp array
SLA8004
1/stv 9902
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2SC4883A
Abstract: 2SC4883 FM20 DSA0016510
Text: 2SC4883/4883A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1859/A Application : Audio Output Driver and TV Velocity-modulation •Absolute maximum ratings (Ta=25°C) (Ta=25°C) IC 2 A V(BR)CEO 180min 150min IC=10mA IB 1 A hFE VCE=10V, IC=0.7A
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2SC4883/4883A
2SA1859/A)
10max
180min
150min
120typ
30typ
O220F)
2SC4883
2SC4883A
FM20
DSA0016510
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2SD2560
Abstract: 2SB1647 DSA0016513
Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA
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2SD2560
2SB1647)
MT-100
100max
150min
5000min
70typ
120typ
2SD2560
2SB1647
DSA0016513
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2SD2562
Abstract: 2sb1649
Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2SD2562
2SB1649)
FM100
100max
150min
5000min
70typ
120typ
2SD2562
2sb1649
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2SD2438
Abstract: 2SB1587 transistor ,12v ,Ic 1A ,NPN
Text: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A
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2SD2438
2SB1587)
FM100
100max
150min
5000min
80typ
85typ
2SD2438
2SB1587
transistor ,12v ,Ic 1A ,NPN
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Untitled
Abstract: No abstract text available
Text: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max
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SLA8004
LF817)
100max
60max
60min
150min
35max
55min
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2SC4382
Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Text: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A
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2SC4381/4382
2SA1667/1668)
10max
150min
200min
60min
15typ
35typ
O220F)
2SC4382
2SC4381
FM20
2SC4382 transistor
DSA0016509
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2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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2SD2390
Abstract: 2SB1560
Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max
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2SD2390
2SB1560)
MT-100
100max
150min
5000min
55typ
95typ
2SD2390
2SB1560
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LF400A
Abstract: STA335A 10T25 IC 122
Text: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A
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STA335A
10max
500min
150min
LF400A)
LF400A
STA335A
10T25
IC 122
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2SD2560
Abstract: 2SB1647 2sd25
Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)
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2SD2560
2SB1647)
100max
150min
5000min
70typ
120typ
MT-100
2SD2560
2SB1647
2sd25
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2sc2837
Abstract: 2SA1186
Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE 50min∗ VCE=4V, IC=3V A VCE(sat) IC=5A, IB=0.5A 2.0max V 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C
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2SC2837
2SA1186)
MT-100
100max
150min
50min
70typ
60typ
2sc2837
2SA1186
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2SD2562
Abstract: 2SD256 2sb1649
Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2SD2562
2SB1649)
FM100
100max
150min
5000min
70typ
120typ
2SD2562
2SD256
2sb1649
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2SC2837
Abstract: 2SA1186 cin60 2SA1186 2SC2837 DSA0016506
Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE VCE=4V, IC=3V 50min∗ V 2 A VCE(sat) IC=5A, IB=0.5A PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C
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2SC2837
2SA1186)
MT-100
100max
150min
50min
70typ
60typ
2SC2837
2SA1186
cin60
2SA1186 2SC2837
DSA0016506
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transistor 2SD2389
Abstract: 2SD2389 2SB1559
Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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2SD2389
2SB1559)
MT-100
100max
150min
5000min
transistor 2SD2389
2SD2389
2SB1559
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2SC3284
Abstract: 2SA1303 2sC3284 power transistor
Text: 2SC3284 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1303 ICBO VCB=150V 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO IC=25mA 150min V A hFE VCE=4V, IC=5A 50min∗ IC=5A, IB=0.5A 2.0max V 14 IB 3 A VCE(sat) PC 125(Tc=25°C) W fT VCE=12V, IE=–2A
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2SC3284
2SA1303)
MT-100
100max
150min
50min
60typ
200typ
2SC3284
2SA1303
2sC3284 power transistor
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2SB1648
Abstract: 2SD2561 2sd25
Text: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB
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2SD2561
2SB1648)
100max
150min
5000min
70typ
120typ
MT-200
2SB1648
2SD2561
2sd25
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2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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2SD2633
Abstract: 84AB 2sd26
Text: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)
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2SD2633
100max
10max
150min
2000min
O220F
2SD2633
84AB
2sd26
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2SD2561
Abstract: DSA0016513 2sb1648
Text: Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A
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2SD2561
2SB1648)
100max
150min
5000min
70typ
120typ
MT-200
2SD2561
DSA0016513
2sb1648
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2SC4886
Abstract: 2SA1860
Text: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank
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2SC4886
2SA1860)
100max
150min
50min
500mA
60typ
200typ
26typ
35typ
2SC4886
2SA1860
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2SD2438
Abstract: 2SB1587 transistor 2SD2438
Text: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A
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2SD2438
2SB1587)
FM100
100max
150min
5000min
80typ
85typ
2SD2438
2SB1587
transistor 2SD2438
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2SD2389
Abstract: 2SB1559 in401
Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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2SD2389
2SB1559)
MT-100
100max
150min
5000min
2SD2389
2SB1559
in401
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PT 1132
Abstract: LF400A STA335A
Text: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A
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STA335A
10max
500min
150min
LF400A)
PT 1132
LF400A
STA335A
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