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    ams OSRAM Group MIRA050-MINI-SENSOR-BOARD-MONO

    MIRA050 MINI SENSOR BOARD MONO
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    DigiKey MIRA050-MINI-SENSOR-BOARD-MONO Bulk 1
    • 1 $127.5
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    Littelfuse Inc MINISMDC014F-2

    Resettable Fuses - PPTC .14A 60V 10A Imax
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    Mouser Electronics MINISMDC014F-2 143,087
    • 1 $0.36
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    Littelfuse Inc MINISMDC150F/12-2

    Resettable Fuses - PPTC 1.5A 12V 100A Imax
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    Mouser Electronics MINISMDC150F/12-2 64,985
    • 1 $0.45
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    Littelfuse Inc MINISMDC030F-2

    Resettable Fuses - PPTC 30V 40A 1.75Ohms
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    Mouser Electronics MINISMDC030F-2 57,944
    • 1 $0.42
    • 10 $0.392
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    Littelfuse Inc MINISMDC150F/24-2

    Resettable Fuses - PPTC 24V 1.5A-HD 20A MAX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MINISMDC150F/24-2 54,334
    • 1 $0.57
    • 10 $0.547
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    50MIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: HVM17 Variable Capacitance Diode for FM tuner ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HVM17 ADE-208-087B 50min) SC-59A Hitachi DSA001652

    2SC3519

    Abstract: 2SC3519A transistor 2sc3519 2SA1386
    Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A


    Original     		PDF 2SC3519/3519A 2SA1386/A) 2SC3519A 100max 160min 180min 50min 50typ 250typ 2SC3519 2SC3519A transistor 2sc3519 2SA1386

    2SC4467

    Abstract: transistor 2SC4467 2SA1694
    Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC4467 2SA1694) MT-100 10max 50min 20typ 200typ 100ms 2SC4467 transistor 2SC4467 2SA1694

    2SC4065

    Abstract: TRANSISTOR SE 135
    Text: Power Transistor 2SC4065 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB (Ta=25ºC) Unit µA mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5


    Original     		PDF 2SC4065 100max 60max 60min 50min 35max 24typ 180typ 2SC4065 TRANSISTOR SE 135

    2SA1386

    Abstract: 2SA1386A 1386A transistor 2sc3519 DSA0016503 transistor 2sa1386
    Text: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A


    Original     		PDF 2SA1386/1386A 2SC3519/A) 100max 180min 160min 50min 40typ 500typ 2SA1386 2SA1386 2SA1386A 1386A transistor 2sc3519 DSA0016503 transistor 2sa1386

    2SC3856

    Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
    Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)


    Original     		PDF 2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 2SA1492 2SA1492 2SC3856 DSA0016508

    2SC5101

    Abstract: 2SA1909 DSA0016511
    Text: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC5101 2SA1909) FM100 10max 140min 50min 20typ 250typ 2SC5101 2SA1909 DSA0016511

    2SA1746

    Abstract: DSA0016504
    Text: 2SA1746 LOW VCE sat Silicon PNP Epitaxial Planar Transistor V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat)


    Original     		PDF 2SA1746 10max 50min 25typ 400typ FM100 2SA1746 DSA0016504

    2SC4467

    Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
    Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC4467 2SA1694) MT-100 10max 50min 20typ 200typ 100ms 120min 2SC4467 2SA1694 2sa1694 2sc4467 DSA0016509

    2SC3519

    Abstract: 2SC3519A SE140 2SA1386 c 3519a DSA0016507
    Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=10V, f=1MHz 180 160 V 50min∗ IC=5A, IB=0.5A 2.0max V


    Original     		PDF 2SC3519/3519A 2SA1386/A) 180min 160min 50typ 250typ 45typ 50min 100max MT-100 2SC3519 2SC3519A SE140 2SA1386 c 3519a DSA0016507

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB4R7M Features Item Summary 4.7 H ±20% , 4A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB4R7M 50min, 500pcs 96MHz 50min 38MHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB5R6M Features Item Summary 5.6 H ±20% , 3.8A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB5R6M 50min, 500pcs 96MHz 50min 34MHz

    2SA1725

    Abstract: 2SC4511 FM20 2sa1725 transistor
    Text: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C


    Original     		PDF 2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 2sa1725 transistor

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB3R3M Features Item Summary 3.3 H ±20% , 4.2A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB3R3M 50min, 500pcs 96MHz 50min 46MHz

    2SC4466

    Abstract: 2SA1693
    Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		PDF 2SC4466 2SA1693) 10max 80min 50min 20typ 110typ to100) to140) 2SC4466 2SA1693

    2SA1726

    Abstract: 2SC4512
    Text: 2SA1726 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4512 VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max


    Original     		PDF 2SA1726 2SC4512) MT-25 10max 80min 50min 20typ 150typ 2SA1726 2SC4512

    2SC4466

    Abstract: 2SA1693
    Text: 2SA1693 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4466 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –1.5max V 60(Tc=25°C) W


    Original     		PDF 2SA1693 2SC4466) MT-100 10max 80min 50min 20typ 150typ 100ms 2SC4466 2SA1693

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB222J Features Item Summary 2200 H ±5% , 0.25A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB222J 50min, 500pcs 252MHz 50min

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB102J Features Item Summary 1000 H ±5% , 0.41A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB102J 50min, 500pcs 252MHz 50min

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB272J Features Item Summary 2700 H ±5% , 0.24A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB272J 50min, 500pcs 252MHz 50min 67MHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB220K Features Item Summary 22 H ±10% , 1.8A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)


    Original     		PDF LHL08TB220K 50min, 1000pcs 52MHz 50min 11MHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB470K Features Item Summary 47 H ±10% , 1.7A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)


    Original     		PDF LHL10TB470K 50min, 500pcs 52MHz 50min

    Untitled

    Abstract: No abstract text available
    Text: HVM17 Variable Capacitance Diode for FM tuner HITACHI ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF HVM17 ADE-208-087B 50min) 10MHz 200pF, 10OnA

    Untitled

    Abstract: No abstract text available
    Text: QFP-Socket and Emulation-Adapter HHSÌ3 QFP/TQFP80 20 x 20 0.65 mm pitch IC - Dimensions Adapter PCB-Layout (View from Soldering Side) Socket PCB-Layout (Top View) 2-20. 50min .4-14. 70max .65 x 19.= ß. 6 5 * 1 9 = 1 2 . 3 5 ± 0 . 12.35 ±0. 4 - 1 3. 0 Ori I r


    OCR Scan     		PDF QFP/TQFP80 50min 70max IC149-080-017-S5 IC149-080-117-S5 I49-080-017-B5 IC149-080-021-S5 IC149-080-121-S5 IC149-080-021-B5 IC149-080-121-B5