wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
|
Original
|
PDF
|
MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
|
wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
|
Original
|
PDF
|
MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
|
wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
|
Original
|
PDF
|
MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
|
MOTOROLA SEMICONDUCTOR AN1542
Abstract: IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet AC INRUSH CURRENT LIMITER DSA0035015 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must
|
Original
|
PDF
|
AN1542/D
AN1542
AN1542/D*
MOTOROLA SEMICONDUCTOR AN1542
IGD 507 an
MOTOROLA smd SCR
AN1542
SMPS INRUSH CURRENT LIMITER
ntc thermistors for inrush current limiting
smps using SCR& mosfet
AC INRUSH CURRENT LIMITER
DSA0035015
Nippon capacitors
|
IGD 507 an
Abstract: MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must
|
Original
|
PDF
|
AN1542/D
AN1542
AN1542/D*
IGD 507 an
MOTOROLA SEMICONDUCTOR AN1542
pmos Vt
AN1542
Nippon capacitors
diode gfm
|
SANKEN power supply
Abstract: SI-5201 Relay 5V, 10A, sanken sanken power transistor SANKEN SI B105 CF35 relay 5v 5a, 5 pin relay 5v 30a
Text: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in
|
Original
|
PDF
|
SI-5201
SI-5201
O220S-7
O220S-7
I04-001EA-070320
SANKEN power supply
Relay 5V, 10A,
sanken
sanken power transistor
SANKEN SI
B105
CF35
relay 5v 5a, 5 pin
relay 5v 30a
|
relay 5v 30a
Abstract: Si520 si5201
Text: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in
|
Original
|
PDF
|
SI-5201
SI-5201
O220S-7
I04-001EA-070320
relay 5v 30a
Si520
si5201
|
4w-2w hybrid
Abstract: C10535E uPD7073 upd9903gt RFT Semiconductors P48GT-65-375B-1 PC9903
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD9903 µPD9903 ANALOG SUBSCRIBER LINE LSI DIGITAL CODEC The µPD9903 is a digital CODEC that can be used in analog subscriber circuits such as private branch exchangers (PBXs) and switching equipment for central offices. It features three of the functions required for analog subscriber
|
Original
|
PDF
|
PD9903
PD9903
PC7073)
4w-2w hybrid
C10535E
uPD7073
upd9903gt
RFT Semiconductors
P48GT-65-375B-1
PC9903
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 0.160 (Typ.)
|
OCR Scan
|
PDF
|
2SJ377
--60V)
|
45ACZ
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII 2S K2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 70S (Typ.)
|
OCR Scan
|
PDF
|
2SK2985
K2985
45ACZ
|
sc sf 12A H3
Abstract: 2SJ438
Text: TO SHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2 S J 43 8 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 0 3 .2 ± 0 .2
|
OCR Scan
|
PDF
|
2SJ438
100/i
sc sf 12A H3
2SJ438
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance :|Y fs | = 1.2S (Typ.)
|
OCR Scan
|
PDF
|
2SK2963
100//A
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • « • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-5^ (Typ.)
|
OCR Scan
|
PDF
|
2SK2963
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7t-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS U n it in mm 4V Gate Drive
|
OCR Scan
|
PDF
|
2SK1381
20kil)
|
|
|
diode 0416
Abstract: 0416 relay diode 04-16
Text: TO SHIBA TENTATIVE 2SK2986 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII 2SK2986 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10.3MAX. 1.32 5.0 •
|
OCR Scan
|
PDF
|
2SK2986
20kil)
--70A,
13R//H
diode 0416
0416 relay
diode 04-16
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2987 T O SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL M O S TYPE U -M O S H J <; K ? QR7 HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O T O R DRIVE APPLICATIONS • Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
2SK2987
100/zA
|
Untitled
Abstract: No abstract text available
Text: TP0102 ^ Supertax; inc- TP0104 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ ^ D S O N V<3S(th) ' d (ON ) b v dgs (max) (max) (min) -20V 4.0£2 -2.4V -40V 4.0ÌÌ -2.4V Order Number / Package
|
OCR Scan
|
PDF
|
TP0102
TP0102N2
TP0104N2
TP0102N3
TP0104N3
O-243AA*
TP0104N8
TP0102ND
TP0104ND
OT-89.
|
wiring VDG 13 relay
Abstract: transistor tip 62 1ST22 R/IC+ax+33121
Text: MOTOROLA • SEMICONDUCTOR MC33121 TECHNICAL DATA Low Voltage Subscriber Loop Interface Circuit The MC33121 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface functions include battery feed, proper loop termination AC impedance,
|
OCR Scan
|
PDF
|
MC33121
MC33121
wiring VDG 13 relay
transistor tip 62
1ST22
R/IC+ax+33121
|
motorola 9100-11
Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC
|
OCR Scan
|
PDF
|
MC33120/D
MC33120
motorola 9100-11
Battery Managements
MC33120P
mjd41
rs 3060 cj
1N4002
MC33120FN
ST12
ST21
|
wiring VDG 13 relay
Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
Text: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and
|
OCR Scan
|
PDF
|
IR6000
R6000
IR6000
D-6380
wiring VDG 13 relay
"international rectifier" ir6000
wiring VDG 14 relay
driver injectors
24V 8 pins DIP relay pinout diagram
DDE1363
SS452
|
ixfk73n30
Abstract: IXFN73N30
Text: ÜIXYS VDSS HiPerFET Power MOSFETs IXFK73N30 IXFN 73N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 p DS on 300 V 73 A 45 mQ 300 V 73 A 45 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj =25°Cto150°C
|
OCR Scan
|
PDF
|
IXFK73N30
IXFN73N30
O-264
Cto150
OT-227
E153432
73N30
IXFN73N30
|
Diode D25 N10 R
Abstract: Diode D25 N10 P
Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK
|
OCR Scan
|
PDF
|
IXFK100N10
IXFN150
O-264
OT-227
E153432
Diode D25 N10 R
Diode D25 N10 P
|
Untitled
Abstract: No abstract text available
Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB
|
OCR Scan
|
PDF
|
430Z271
RFD7N10LE,
RFD7N10LESM
RFP7N10LE
O-220AB
O-251AA
RFD7N10LESM
RFP7N10LE
184e-9
|
IRF452
Abstract: IRF450 IRF451 irf453
Text: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
PDF
|
IRF450,
IRF451,
IRF452,
IRF453
TA17435.
RF452,
IRF452
IRF450
IRF451
irf453
|
