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    Toshiba America Electronic Components 2SK2963(TE12L,F)

    MOSFET N-CH 100V 1A PW-MINI
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    Toshiba America Electronic Components 2SK2963(TE12L)

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    Quest Components 2SK2963(TE12L) 3,990
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    Toshiba America Electronic Components 2SK2963

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    2SK2963 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2963 Toshiba Original PDF
    2SK2963 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2963 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2963 Toshiba FETs - Nch 60V Original PDF
    2SK2963 Toshiba Silicon N-channel MOS type field effect transistor for high speed, relay drive, DC-DC converter, motor drive applications Scan PDF
    2SK2963 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2963(T2LSUMIS) Toshiba 2SK2963 - Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) PW-Mini T/R Original PDF
    2SK2963(TE12L) Toshiba 2SK2963 - MOSFET N-CH 100V 1A PW-MINI Original PDF
    2SK2963TE12L Toshiba 2SK2963TE12L - Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) PW-Mini T/R Original PDF
    2SK2963(TE12L,F) Toshiba 2SK2963 - MOSFET N-CH 100V 1A PW-MINI Original PDF

    2SK2963 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C12120

    Abstract: 2SK2963
    Text: 2SK2963 東芝電界効果トランジスタ シリコンNチャネルMOS形 L2-π-MOSV 2SK2963 ○ リレー駆動, DC-DC コンバータ用 ○ モータドライブ用 単位: mm • 4 V 駆動です。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.2 S (標準)


    Original     		PDF 2SK2963 C12120 2SK2963

    2SK2963

    Abstract: No abstract text available
    Text: 2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOS V 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.2 S (typ.)


    Original     		PDF 2SK2963 2SK2963

    2SK2963

    Abstract: No abstract text available
    Text: 2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOS V 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications • 4 V gate drive • Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.2 S (typ.)


    Original     		PDF 2SK2963 2SK2963

    Untitled

    Abstract: No abstract text available
    Text: 2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOS V 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.2 S (typ.)


    Original     		PDF 2SK2963

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • « • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-5^ (Typ.)


    OCR Scan     		PDF 2SK2963

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 4 V Gate Drive Low Drain-Souree ON Resistance


    OCR Scan     		PDF 2SK2963

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2963 TO SH IBA FIELD EFFECT TRANSISTO R SILICON N CH ANN EL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATION S INDUSTRIAL APPLICATIONS DC-DC CONVERTER, R E LA Y DRIVE AN D M OTOR DRIVE APPLICATIO N S 4V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2963 1UI11SW --25V, 221mH

    2SK2963

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1.6MAX. -*)— 4.6M AX. 4 V Gate Drive Low Drain-Souree ON Resistance : Rd S (ON) - 0.5 O (Typ.)


    OCR Scan     		PDF 2SK2963 2SK2963

    2SK2963

    Abstract: GSR160 marking transistor BAS 16
    Text: TOSHIBA 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOSV 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Source O N Resistance • High Forward Transfer Admittance :|Yfs| = 1.2S (Typ.)


    OCR Scan     		PDF 2SK2963 221mH 2SK2963 GSR160 marking transistor BAS 16

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance :|Y fs | = 1.2S (Typ.)


    OCR Scan     		PDF 2SK2963 100//A

    2SK2963

    Abstract: No abstract text available
    Text: TO SH IBA 2SK2963 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOSV Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : RdS (ON) - 0.5 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 1.2 S (Typ.)


    OCR Scan     		PDF 2SK2963