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LEDIL CA10318_TITANUM-O-SS LENS CLR 8DEG/9DEG SPOT ADH TAPE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CA10318_TITANUM-O-SS	Tray			77	1 - 10 - 100 $2.60883 1000 $2.60883 10000 $2.60883	Buy Now
Avnet Americas	CA10318_TITANUM-O-SS	Reel			308	1 - 10 - 100 - 1000 $1.176 10000 $1.164	Buy Now
Mouser Electronics	CA10318_TITANUM-O-SS		86			1 $3.69 10 $2.67 100 $2.67 1000 $2.29 10000 $2.24	Buy Now
Newark	CA10318_TITANUM-O-SS	Bulk			77	1 - 10 - 100 $2.7 1000 $2.62 10000 $2.62	Buy Now
EBV Elektronik	CA10318_TITANUM-O-SS			7 Weeks	308	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Omega Engineering RECU1-SMP-U-M-OST-U-F RTD EXTENSION CABLES - Bulk (Alt: RECU1-SMP-U-M-OST-)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RECU1-SMP-U-M-OST-U-F	Bulk		4 Weeks	1	1 $36.47428 10 $36.47428 100 $36.47428 1000 $36.47428 10000 $36.47428	Buy Now
Omega Engineering TECU25-OST-U-M-OST-U-F Rtd Extension Cable \|Omega TECU25-OST-U-M-OST-U-F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TECU25-OST-U-M-OST-U-F	Bulk	20		1	1 $57.1 10 $57.1 100 $57.1 1000 $57.1 10000 $57.1	Buy Now
Omega Engineering RECU1-OST-U-M-OST-U-F Rtd Extension Cable \|Omega RECU1-OST-U-M-OST-U-F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RECU1-OST-U-M-OST-U-F	Bulk	5		1	1 $35.05 10 $35.05 100 $35.05 1000 $35.05 10000 $35.05	Buy Now
Omega Engineering GECU10-OST-U-M-OST-U-F Rtd Extension Cable \|Omega GECU10-OST-U-M-OST-U-F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GECU10-OST-U-M-OST-U-F	Bulk	3		1	1 $28.63 10 $28.63 100 $28.63 1000 $28.63 10000 $28.63	Buy Now

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UMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DMG4710SSS Abstract: DMG4710SSS-13 Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4710SSS AEC-Q101 DS32055 DMG4710SSS DMG4710SSS-13
DMG4712SSS Abstract: DMG4712SSS-13 Text: DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency	Original	PDF	DMG4712SSS AEC-Q101 J-STD-020 DS32040 DMG4712SSS DMG4712SSS-13
8005H Abstract: No abstract text available Text: TPCP8005-H 東芝電界効果トランジスタシリコンNチャネルMOS形 UMOSⅤ-H TPCP8005-H ○ 高効率 DC/DC コンバータ用 ○ ノートブック PC 用単位: mm ○ 携帯電子機器用 0.33±0.05 小型､薄型で実装面積が小さい。	Original	PDF	TPCP8005-H 10VID 8005H
S3016SS Abstract: No abstract text available Text: DMS3016SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMS3016SSS AEC-Q101 J-STD-020 DS32266 S3016SS
DS3205 Abstract: No abstract text available Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4710SSS AEC-Q101 J-STD-020 DS32055 DS3205
DMG4710SSS Abstract: DMG4710SSS-13 G471 Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4710SSS AEC-Q101 J-STD-020 DS32055 DMG4710SSS DMG4710SSS-13 G471
G4932LD Abstract: DMG4932LSD Text: DMG4932LSD NEW PRODUCT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4932LSD AEC-Q101 J-STD-020 DS32119 G4932LD DMG4932LSD
Untitled Abstract: No abstract text available Text: DMG4712SSS N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency	Original	PDF	DMG4712SSS AEC-Q101 DS32040
Untitled Abstract: No abstract text available Text: DMG4932LSD N EW PRODU CT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4932LSD AEC-Q101 DS32119
DS3205 Abstract: No abstract text available Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4710SSS AEC-Q101 J-STD-020 DS32055 DS3205
NP75P04 Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:	Original	PDF	AEC-Q101 D17430EE5V0PF00 NP75P04 NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
DMG4712SSS Abstract: DMG4712SSS-13 Text: DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency	Original	PDF	DMG4712SSS AEC-Q101 J-STD-020 DS32040 DMG4712SSS DMG4712SSS-13
M2SK3295 Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707 Text: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value	Original	PDF	O-220 2SK2499 2SK2826 2SK3355 PA1855 0V/23m 2SK3295 2SK3296 2SK3365 2SK3367 M2SK3295 M2SK3354 2SK2499 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
S3014SS Abstract: DMS3014SSS-13 Text: DMS3014SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency	Original	PDF	DMS3014SSS AEC-Q101 J-STD-020 DS32265 S3014SS DMS3014SSS-13

G4932LD Abstract: DMG4932LSD DS321 Text: DMG4932LSD NEW PRODUCT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency Low On-Resistance	Original	PDF	DMG4932LSD AEC-Q101 J-STD-020 DS32119 G4932LD DMG4932LSD DS321
nec li ion Abstract: FET 8PIN equivalent of mosfet in computer mother board Pch MOS FET uPA1714 PA1700 PA1700A PA1702 PA1703 PA1712 Text: LINEUP LINEUP OF 8-PIN SOP POWER MOSFET Toshihiko Ooishi DMOS Planer structure Source UMOS (U-Groove) structure Gate Source n+ Rch Gate n+ RJFET lower P Rch RJFET REPI n- REPI Rbulk Rbulk n+ Drain nn+ Drain Fig. 1 Comparison of Structure of Power MOSFET	Original	PDF	PA1851 PA1853 PA1850 PA1810 PA1811 PA1812 PA1852 PA1801 PA1800 PA1802 nec li ion FET 8PIN equivalent of mosfet in computer mother board Pch MOS FET uPA1714 PA1700 PA1700A PA1702 PA1703 PA1712
2SC5664 Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation	Original	PDF	D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
complementary MOSFET 2sk Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO Text: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.	Original	PDF	D17356EE1V0PF00 complementary MOSFET 2sk 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
"seat heater" Abstract: np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 mΩ • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:	Original	PDF	AEC-Q101 O-220 O-262 O-263ZJ O-251 O-252Z O-263ZK O-220M O-262N O-263ZP "seat heater" np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG
DMG4712SSS Abstract: DMG4712SSS-13 Text: DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency	Original	PDF	DMG4712SSS AEC-Q101 J-STD-020 DS32040 DMG4712SSS DMG4712SSS-13
Untitled Abstract: No abstract text available Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)	Original	PDF	TPC8075
Untitled Abstract: No abstract text available Text: TPN22006NH MOSFETs Silicon N-channel MOS U-MOS-H TPN22006NH 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)	Original	PDF	TPN22006NH
MCM4517-15 Abstract: MCM4517-12 MCM6664 MAS 10 RCD MCM4517 MCM4116 10-MCM4 MCM-4116 Text: MCM4517 ! 6 .3 8 4 - B IT D Y N A M I C R A M ie M', •M 'lh n o ry UMOS is a ' 6 3 8 ^ - b - i . h : q h - s p e e d , d y n a m i c R a n d o m - A c c e s s MOS O r c d c . / e O -is 16 .384 o n e o n w o r d s a n d f a b r i c a t e d u s in g hig»’ ¡ > e - fo r m a n c e	OCR Scan	PDF	384-BIT MCM4517 16-pin MCM4b17 MCM4517-15 MCM4517-12 MCM6664 MAS 10 RCD MCM4116 10-MCM4 MCM-4116
Untitled Abstract: No abstract text available Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)	OCR Scan	PDF	TPC8103

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UMOS Price and Stock

LEDIL CA10318_TITANUM-O-SS

Omega Engineering RECU1-SMP-U-M-OST-U-F

Omega Engineering TECU25-OST-U-M-OST-U-F

Omega Engineering RECU1-OST-U-M-OST-U-F

Omega Engineering GECU10-OST-U-M-OST-U-F

UMOS Datasheets Context Search

DMG4710SSS

DMG4712SSS

8005H

S3016SS

DS3205

DMG4710SSS

G4932LD

Untitled

Untitled

DS3205

NP75P04

DMG4712SSS

M2SK3295

S3014SS

G4932LD

nec li ion

2SC5664

complementary MOSFET 2sk

"seat heater"

DMG4712SSS

Untitled

Untitled

MCM4517-15

Untitled