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Diodes Incorporated DMS3014SSS-13 MOSFET N-CH 30V 10.4A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DMS3014SSS-13	Cut Tape	25		1	1 $0.56 10 $0.373 100 $0.373 1000 $0.373 10000 $0.373	Buy Now
	DMS3014SSS-13	Digi-Reel	25		1	1 $0.56 10 $0.373 100 $0.373 1000 $0.373 10000 $0.373	Buy Now
	DMS3014SSS-13	Digi-Reel			1	1 $0.46 10 $0.46 100 $0.46 1000 $0.46 10000 $0.46	Buy Now
	DMS3014SSS-13	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	DMS3014SSS-13	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

DMS3014SSS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DMS3014SSS		Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE		Original	PDF
DMS3014SSS-13		Diodes	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A SO8		Original	PDF

DMS3014SSS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN72 Abstract: DMN4800LSS SCHOTTKY 4A 600V dmg4496 DMG4466SS DMG4466SSS DMG4496SSS mosfet with Integrated Schottky Diodes Text: AN72 DIOFET boosts PoL efficiency, reduces heat versus standard MOSFET Dean Wang, and Yong Ang, Applications Engineer, Diodes Inc. Introduction This application note describes the benefits of using the DMS3014SSS in the low-side MOSFET position of synchronous buck point-of-load PoL converters. The DMS3014SSS utilizes Diodes	Original	PDF	DMS3014SSS AN72 DMN4800LSS SCHOTTKY 4A 600V dmg4496 DMG4466SS DMG4466SSS DMG4496SSS mosfet with Integrated Schottky Diodes
S3014SS Abstract: DMS3014SSS-13 Text: DMS3014SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency	Original	PDF	DMS3014SSS AEC-Q101 J-STD-020 DS32265 S3014SS DMS3014SSS-13
S3014SS Abstract: No abstract text available Text: DMS3014SSS N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses	Original	PDF	DMS3014SSS AEC-Q101 DS32265 S3014SS
S3014SS Abstract: S3014 DMS3014SSS-13 Text: DMS3014SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses	Original	PDF	DMS3014SSS AEC-Q101 DS32265 S3014SS S3014 DMS3014SSS-13
complementary MOSFET TO252 Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4 Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and	Original	PDF	D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	PDF	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502