rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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Untitled
Abstract: No abstract text available
Text: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
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MMBT3906
OT-23
MMBT3904
OT-23
MIL-STD-202E
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125OC
Abstract: MMBT3904 MMBT3906
Text: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
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MMBT3906
OT-23
MMBT3904
OT-23
MIL-STD-202E
125OC
MMBT3906
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200w transistor amplifier circuit
Abstract: MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a
Text: ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS NPN TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is
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MPS2222A
OT-23
MMBT2222A
200w transistor amplifier circuit
MMBT2222A
MPS2222A
mps2222a transistor
pin configuration transistor mps2222a
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TO63 package
Abstract: NTE71
Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.
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NTE71
NTE71
TO63 package
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
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nte328
Abstract: 25A12
Text: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage
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NTE328
NTE328
25A12
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marking code 1p
Abstract: MMBT2222A MPS2222A 10D4
Text: ADVANCED INFORMATION ADVANCED INFORMATION MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ This transistor is also available in the
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MMBT2222A
OT-23
MPS2222A.
OT-23
marking code 1p
MMBT2222A
MPS2222A
10D4
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transistor 2n4403 equivalent
Abstract: NPN switching transistor 2N4403 Transistor 2N4401 2N4401 2N4403 MMBT4403 200w transistor amplifier circuit 2n4401 configuration 2n4401 amplifier transistor 2n4401 equivalent
Text: ADVANCED INFORMATION ADVANCED INFORMATION 2N4403 SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the NPN transistor
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2N4403
2N4401
OT-23
MMBT4403.
100ms
transistor 2n4403 equivalent
NPN switching transistor 2N4403
Transistor 2N4401
2N4403
MMBT4403
200w transistor amplifier circuit
2n4401 configuration
2n4401 amplifier
transistor 2n4401 equivalent
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NTE327
Abstract: transistor NTE327
Text: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain
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NTE327
NTE327
transistor NTE327
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1214EL200 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS High Power Gain Superior Thermal Stability The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 16ms
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ILD1214EL200
ILD1214EL200
ILD1214EL200-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power
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DU2820S
2-175MHz,
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Untitled
Abstract: No abstract text available
Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power
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DU28200M
2-175MHz,
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Untitled
Abstract: No abstract text available
Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF161
150MHz
30MHz,
150MHz,
MRF151
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MOSFET J140
Abstract: DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz
Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power
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DU2820S
2-175MHz,
MOSFET J140
DU2820S
200w Transistor
transistor 200w
RF POWER MOSFET TRANSISTOR 100MHz
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PSMN040-200W
Abstract: PSMN040200W
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A
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PSMN040-200W
OT429
PSMN040-200W
PSMN040200W
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VK200-4B
Abstract: No abstract text available
Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF161
150MHz
30MHz,
150MHz,
MRF151
VK200-4B
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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200W PUSH-PULL
Abstract: BAL0102-150 200w Transistor
Text: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:
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BAL0102-150
OT-161
002c1
200W PUSH-PULL
BAL0102-150
200w Transistor
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PSMN040-200W
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN040-200W SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance
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PSMN040-200W
PSMN040-200W
OT429
T0247)
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2SA495
Abstract: sk a 3050 c 2SC373 2SA495-Y 2SA495Y 2SC372 transistor 2sc373 transistor 2SC372 2sa495 toshiba 2SA495G
Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA PROCESS , ii ° High Frequency Amplifier ° High Speed Switching Applications 2SC372 2SC373 @ t ^ > T- ') * 's * a : fT = : VcE(sat) A -f y *S- -S Complementary INDUSTRIAL APPLICATIONS Applications = 200Wiz -0.2V (Typ.)
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3SC37Z
2SC373
200WIz
250ns
2SC372Â
2SC373Â
2sa495g
2SA495
sk a 3050 c
2SC373
2SA495-Y
2SA495Y
2SC372
transistor 2sc373
transistor 2SC372
2sa495 toshiba
2SA495G
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2sc2652
Abstract: 2-13B1A 200WPEP
Text: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency
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2SC2652
30MHz
28MHz
200WpEP
--30dB
2-13B1A
100mA,
1S1555
961001EAA2'
2sc2652
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