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    2N3966 Price and Stock

    New Jersey Semiconductor Products, Inc. 2N3966

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    Bristol Electronics 2N3966 2,835 1
    • 1 $8.736
    • 10 $4.368
    • 100 $3.7853
    • 1000 $3.5818
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    New Jersey Semiconductor Products Inc 2N3966

    TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,2MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3966 2,268
    • 1 $11.7
    • 10 $11.7
    • 100 $11.7
    • 1000 $4.095
    • 10000 $4.095
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    Philips Semiconductors 2N3966

    Electronic Component
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    ComSIT USA 2N3966 2
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    2N3966 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3966 Philips Semiconductors N-Channel Junction Field Effect Transistors Original PDF
    2N3966 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3966 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3966 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3966 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3966 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3966 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3966 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3966 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3966 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3966 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3966 National Semiconductor Switches/Choppers Scan PDF
    2N3966 National Semiconductor N-Channel JFET Switch Scan PDF
    2N3966 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3966 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N3966 Semico N-Channel Junction Field Effect Transistors Scan PDF
    2N3966 SGS-Thomson Transistor Datasheet Scan PDF
    2N3966 Siliconix FET Design Catalogue 1979 Scan PDF
    2N3966 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2N3966 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF

    2N3966 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    U1897E

    Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
    Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A


    Original     		PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 U1897E U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130

    Untitled

    Abstract: No abstract text available
    Text: 2N3966 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2N3966

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


    Original     		PDF 2N5432 2N5433 2N5434 2N3686 2N3822 2N4118A 2N4416A 2N3684 2N5197 2N6485

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2n3966

    Abstract: transistor 2sk CRS15
    Text: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f


    OCR Scan     		PDF 2N3966 -T-3S-25' aTO-72 002b34fl T-35-25 2n3966 transistor 2sk CRS15

    MPF102

    Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
    Text: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical


    OCR Scan     		PDF -55to 220S2 Vqs-16 MPF102 J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112

    PN5432

    Abstract: U1898
    Text: A National Semiconductor NATL N-Channel JFETs C|» rds on (11) @ lD (P F)@ V d s Max (mA) Max (V) 2N3824 2N3966 2N3970 2N3971 2N3972 TO-72 TO-72 TO-18 TO-18 TO-18 SO 30 40 40 40 1 1 1 1 1 0.1 1 0.25* 0.25* 0.25* 30 20 20 20 20 0.1 0.1 0.25 0.25 0.25 15 10


    OCR Scan     		PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 PN5432 U1898

    jfet selection guide

    Abstract: rcm 2020
    Text: 3> —3 H JFET Selection Guide _ N - C n a n n e l 2 2 Ul o JFETs CO o S W IT C H F S /n H O P P F R S , S tyle 2N3824 TO-72 50 2N3966 TO-72 30 1 2N3970• TO-18 40 1 2N3971 TO-18 40 1 0.25* 2N3972 TO-18 40 1 0,25* 2N4091 TO-18 40 1 0.2* 2N4092 TO-18 40 1


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE 2N3966 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L-S 7 0 1 1 3 5 6 , A U G U S T 1970 FOR HIGH-SPEED CO M M U TA TO R A N D CHOPPER APPLICATIO N S • Low rds on • - • 220 £1 Max • Low iD (o ff) • ■ 1 nA Max


    OCR Scan     		PDF 2N3966

    Untitled

    Abstract: No abstract text available
    Text: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems.


    OCR Scan     		PDF 2N3966 bb53T31 D03SfiSb 003SAS7

    Untitled

    Abstract: No abstract text available
    Text: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970


    OCR Scan     		PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    PN4858

    Abstract: 2N4392 NATIONAL SEMICONDUCTOR 2N4393 PN4856 TIS75 2N3971 2N4393, NATIONAL pn4093 PN4857 TIS74
    Text: DDBTDIM CM CM CM CM CM O O O O O CM CM CM CM CM o O O O O CM CM CM CM CM 0 * 0 O O O CM CM CM h * r o o o o o K IO O 1 - T - T­ IO 40 i o IO IO ^ ^ in m i n lo Jo i n i n in in -r- t— t— CO CO in in in m w 00 O r in m m m in © © oo CM cm m issss


    OCR Scan     		PDF b5D113D 2N5653 2N5654 PN4091 PN4092 PN4093 PN4858 PN4859 PN4860 PN4861 2N4392 NATIONAL SEMICONDUCTOR 2N4393 PN4856 TIS75 2N3971 2N4393, NATIONAL PN4857 TIS74

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


    OCR Scan     		PDF 2N4393 2N4856 2N4856A 2N4857 2N3824

    2N4303

    Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
    Text: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60


    OCR Scan     		PDF P1087 P1087-18 SD210 SD211 S0212 SD213 SD214 SD215 U1897 U1897-18 2N4303 sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302

    2N3966

    Abstract: 219T
    Text: 2N 3966 J V _ N-CHANNEL SILICON FET S ym m etrica l n-channel, d e p le tio n ty p e , planar e p ita xia l ju n c tio n fie ld -e ffe ct tran sisto r in a T O -72 m etal envelope w ith th e shield lead connected to th e case. The tra n sisto r is suitable in a va rie ty o f


    OCR Scan     		PDF 2N3966 003505b 2N3966 219T

    mpf102 equivalent

    Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6
    Text: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz


    OCR Scan     		PDF Vqs-16 mpf102 equivalent U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device


    OCR Scan     		PDF SGM33Ã D003bl5 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093

    Untitled

    Abstract: No abstract text available
    Text: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING MAXIMUM RATINGS TYPE NO. Pd VGS ofl (mA) (V) BVGSS (mW) (V) min max rds(on) Ciss Crss ton toff (ohms) (PF) (PF) (bs) (ns) min IMI m ar max max max IMI 3 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220


    OCR Scan     		PDF 2N3966 O-92DD O-72DH 2N4861A 2N5555 2N5638 2N5639 2N5640

    2N3971

    Abstract: 2n3966 2N5116 2N3824 2N3970 2N3972 2N4091 2N4092 2N4093 2N4391
    Text: «o C signalFET Product Specifications O cont’d y= O o m RF AMP D E V IC E O SWITCHES & CHOPPERS <D a G EO M ETRY (Section 4) co T> X X z z X 3 ? CCXOOOOOOUOOOOOOOOOOOOOOtflto^tttflüÎÉkoU Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z a . £ L O . a . Q . Z Z Z Z Z


    OCR Scan     		PDF U1837 U1837-18 2N3824 2N3966 2N3970 2N4861A 2N5018 2N5019 2N5114 2N5115 2N3971 2N5116 2N3972 2N4091 2N4092 2N4093 2N4391

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680