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    STMicroelectronics 2N3137

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    2N3137 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3137 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N3137 General Transistor Transistors for RF Applications Scan PDF
    2N3137 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3137 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3137 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3137 Unknown GE Transistor Specifications Scan PDF
    2N3137 Unknown Transistor Replacements Scan PDF
    2N3137 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3137 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3137 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3137 Unknown Vintage Transistor Datasheets Scan PDF
    2N3137 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3137 Semico Differential and Dual Amplifiers / UHF Power Amplifiers Scan PDF
    2N3137 Semico Differential and Dual Amplifiers / UHF Power Amplifiers Scan PDF
    2N3137 Semitronics Metal Can Transistors - Silicon Small Signal Transistors Scan PDF
    2N3137 SGS-Thomson Transistor Datasheet Scan PDF
    2N3137 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N3137 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    2N3137 Thomson-CSF Signal Transistors and Field Effect Transistors 1976 Scan PDF
    2N3137 Thomson-CSF Condensed Data Book 1977 Scan PDF

    2N3137 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    Untitled

    Abstract: No abstract text available
    Text: c/ lerisu*y ^emi-Conducto* Lpioducki, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3137(SILICON) NPN silicon annular transistors for large signal VHF and UHF applications. MAXIMUM RATINGS


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    PDF 2N3137 2N3137 20Vdc, -20Vdc, 20Vdc

    2N3137

    Abstract: No abstract text available
    Text: 2N3137 Bipolar NPN UHF/Microwave Transisitor 3.29 Transistors UH. 1 of 1 Home Part Number: 2N3137 Online Store 2N3137 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at


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    PDF 2N3137 com/2n3137 2N3137

    2N3137

    Abstract: Transistor 2n3137 2N313
    Text: 2N3137 RF AMPLIFIER DESCRIPTION The 2N3137 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is a primarily designed for application as a Class-C, RF power amplifier. In addition to the large signal capabilities, the low noise and high transition frequency of the


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    PDF 2N3137 2N3137 200otherwise Transistor 2n3137 2N313

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


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    PDF 2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252

    2N2961

    Abstract: 2N3015 2n3299 2N3107
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ VCB µA) (µ (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) *ICEO *ICES *ICEV *ICER ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


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    PDF 402N3110 2N3114 2N3119 2N3120 2N3122 2N3133 2N3134 2N3137 2N3244 2N3245 2N2961 2N3015 2n3299 2N3107

    2n3137

    Abstract: No abstract text available
    Text: rZ 7 * 7 # SGS-THOMSON R HiOraSOSDOS 2 N3137 RF AMPLIFIER D E S C R IP T IO N The 2N3137 is a silicon planar epitaxial NPN tran­ sistor in a TO-39 metal case. It is a primarily de­ signed for application as a Class-C, RF power amplifier. In addition to the large signal capabilities,


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    PDF N3137 2N3137

    Untitled

    Abstract: No abstract text available
    Text: 3QE D rz 7 S G H 7^5^237 QD311b3 3 H 1— J^ \ I sgs-thomson Mn lf3miCT «@§_ 2N3137 S- TH OM SO N RF AMPLIFIER DESCRIPTION The 2N3137 is a silicon planar epitaxial NPN tran­ sistor in a TO-39 metal case. It is a primarily de­ signed for application as a Class-C, RF power am­


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    PDF QD311b3 2N3137 2N3137 00311bS T-31-21

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10


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    PDF 2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5842 2N6304 2N6305

    2N3137

    Abstract: MM1748A MM1803 MM1748 TO52
    Text: MIMI748, A silicon NPN SILICO N SWITCHING TR A N S IS TO R S NPN SILICO N A N N ULAR SWITCHING TR A N SISTO R S .d e s ig n e d fo r low -voltage, high-speed saturated sw itc h in g ap­ p lica tio n s. • C o lle c to r-E m itte r Su staining V o ltage —


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    PDF MM1748, MM1748A 10mAdc MM1803 2N3137 MM1748A MM1803 MM1748 TO52

    2N2950

    Abstract: TRANSISTOR 2N2950 2N2857 2N3137 2n3600 2N5032 Transistor 2N3866 2N3839 2N5031 2N5179
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS WÊÊÊM NPN TRANSISTORS FOR RF APPLICATIONS TRANS FREQ. t r i le U UtNUM RATINI3S dB) NOISE FIGURE MF AND le {ÿf (mA) 5 3.8 3.0 3.0 5 5 5 25 1400 1200 10 10 600 800 1000 1000 1000 750 800 800 1200


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    PDF 2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5642 2N6304 2N6305 2N2950 TRANSISTOR 2N2950 2N3137 Transistor 2N3866

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118

    2N6197

    Abstract: rf power transistors 2N3924 2N2876 2N4127 2N4073 2N6198 2N5698 MT 59 2N5687
    Text: 61 RF POWER TRANSISTORS TYPE NUM BER O P E R A T IN G FR EQ U EN CY MHz MIN. POWER O U TPU T (W ATTS) MIN. POW ER G A IN (dB) 30-80 MHz RF POWER TRANSISTORS V CC (V O LT S) PACKAGE TYPE 2N5687 2N5847 2N5689 50 50 50 1.5 8 10 12 10 10 12.5 12.5 12.5 TO-39


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    PDF 2N5687 2N5847 MT-72 2N5689 O-117 2N4932 2N5993 2N4933 2N6197 rf power transistors 2N3924 2N2876 2N4127 2N4073 2N6198 2N5698 MT 59

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    2N2961

    Abstract: 2N3053 NPN transistor 2N3072 2N3015 2N3053 2N3114 2N3137 2N2854 2N2890 2N2904A
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO v EBO •CBO v CBO (V) (V) (V) (HA) m *VCEH MIN MIN MIN *lCEO “ Ic e s "*'CEV "*'CER ® lC ® v CE VCE(SAT) ® 'C h (mA) (MHz) (V) (V) hFE MIN MAX MAX Cob *TYP *on *otf NF


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    PDF 2N2854 2N28S5 2N2890 2N2B91 2N2904A 2N3300 2N3326 2N3388 2N3420 2N3421 2N2961 2N3053 NPN transistor 2N3072 2N3015 2N3053 2N3114 2N3137