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    TRANSISTOR 12W 14 Search Results

    TRANSISTOR 12W 14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 12W 14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758

    transistor+SMD+12W+MOSFET

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    78s12

    Abstract: RD12MVS1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101

    AP3970P-G1

    Abstract: 8 dip 6200 smps ic AP3968M-G1 1N4007 rectifier diode AP3968 AP3970 AP3970SP-G1 AP3970P7-G1 SMPS Switcher IC of DIP 7 DIP7 SMPS
    Text: Preliminary Datasheet Primary Side Power Switcher for Off-line SMPS General Description Features The AP3968/69/70/70S consists of a primary side regulation controller and a high voltage transistor, and is specially designed for off-line power supplies within 12W output power. Typical applications


    Original     		PDF AP3968/69/70/70S AP3968 AP3970P-G1 8 dip 6200 smps ic AP3968M-G1 1N4007 rectifier diode AP3970 AP3970SP-G1 AP3970P7-G1 SMPS Switcher IC of DIP 7 DIP7 SMPS

    transistor J9

    Abstract: 12w 66 transistor transistor 60 12w 12w 99
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MS2218 MS2218 transistor J9 12w 66 transistor transistor 60 12w 12w 99

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MS2218 MS2218

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MS2218 MS2218

    MS1553

    Abstract: 12w 99
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1553 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED


    Original     		PDF MS1553 MS1553 12w 99

    12w transistor

    Abstract: RF NPN POWER TRANSISTOR 60w
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1536 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED


    Original     		PDF MS1536 MS1536 12w transistor RF NPN POWER TRANSISTOR 60w

    MS1536

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1536 F RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED


    Original     		PDF MS1536 MS1536

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    20 watts transistor s-band

    Abstract: j948
    Text: 3135GN-170M Rev 1 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF


    Original     		PDF 3135GN-170M 3135GN 55-QP 20 watts transistor s-band j948

    2731GN-200M

    Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374

    transistor d2118

    Abstract: IB1011S190 d2118 D2118 transistor
    Text: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this


    Original     		PDF IB1011S190 IB1011S190 IB1011S190-REV-NC-DS-REV-D transistor d2118 d2118 D2118 transistor

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO Pin : R F IN P U T V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d . DC S U P P L Y ®PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)


    OCR Scan     		PDF M57789 889-915MHz,

    P04 transistor

    Abstract: transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in : RF IN P U T © V C C I : 1s t. DC S U P P L Y VBB : B A S E B IA S S U P P L Y © V C C 2 : 2 n d . DC S U P P L Y ©PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz, P04 transistor transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters

    transistor 12w

    Abstract: M57789
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz, transistor 12w M57789

    Untitled

    Abstract: No abstract text available
    Text: ^24^62^ DD1 7 2 6 3 547 • MITSUBISHI RFPOWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO BLOCK DIAGRAM 1 . œHh PIN : P in RF INPUT Vcci 1st. DC SUPPLY <$VBB BASE BIAS SUPPLY ®VCC2 2nd. DC SUPPLY ®Po RF O UTPUT ®GND FIN ABSOLUTE MAXIMUM RATINGS 0 0 = 2 5 ^ unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


    OCR Scan     		PDF M57789 890-915MHz, DDlb272

    tda2030

    Abstract: amplifier circuit
    Text: ÍZ J S C S -1H 0 M S 0 N TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power d = 0.5% at 14V/4Q; at ± 14V


    OCR Scan     		PDF TDA2030 TDA2030 DIN45500) 00L44G4 amplifier circuit