TRANSISTOR Search Results

TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR Price and Stock

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Gearbox Labs PART-TRANSISTOR-2N2222 TRANSISTOR 2N2222
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PART-TRANSISTOR-2N2222	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia 2N7002NXAKR MOSFETs 2N7002NXAK/SOT23/TO-236AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	2N7002NXAKR	Reel	7,650,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0152	Buy Now
Nexperia PMBT2907A,215 Bipolar Transistors - BJT SOT23 60V .6A PNP SWITCHING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PMBT2907A,215	Reel	7,158,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0111	Buy Now
Nexperia 2N7002,215 MOSFETs 2N7002/SOT23/TO-236AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	2N7002,215	Reel	4,866,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.026	Buy Now
Nexperia MMBT3906,215 Bipolar Transistors - BJT SOT23 40V .2A PNP BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	MMBT3906,215	Reel	4,026,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.012	Buy Now

Find more TRANSISTOR price and stock on Findchips.com

TRANSISTOR Datasheets (110)

Part	Manufacturer	Description	Datasheet Type	PDF
2N1506	Transistor International	Transistor Selection Guide	Scan	PDF
2N158	Transistor & Electronic	Germanium Power Transistors	Scan	PDF
2N2834	Transistor & Electronic	PNP High Power Transistors	Scan	PDF
2N2876	Transistor International	Transistor Selection Guide	Scan	PDF
2N3137	Transistor International	Transistor Selection Guide	Scan	PDF
2N3375	Transistor International	Transistor Selection Guide	Scan	PDF
2N3553	Transistor International	Transistor Selection Guide	Scan	PDF
2N3632	Transistor International	Transistor Selection Guide	Scan	PDF
2N3733	Transistor International	Transistor Selection Guide	Scan	PDF
2N3866	Transistor International	Transistor Selection Guide	Scan	PDF
2N3924	Transistor International	Transistor Selection Guide	Scan	PDF
2N3926	Transistor International	Transistor Selection Guide	Scan	PDF
2N3927	Transistor International	Transistor Selection Guide	Scan	PDF
2N3948	Transistor International	Transistor Selection Guide	Scan	PDF

2N4040	Transistor International	Transistor Selection Guide	Scan	PDF
2N4041	Transistor International	Transistor Selection Guide	Scan	PDF
2N4073	Transistor International	Transistor Selection Guide	Scan	PDF
2N4127	Transistor International	Transistor Selection Guide	Scan	PDF
2N4128	Transistor International	Transistor Selection Guide	Scan	PDF
2N4427	Transistor International	Transistor Selection Guide	Scan	PDF

TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GaAs IRED S PHOTO-TRANSISTOR TLP126 T IP I2 6 P R O G R A M M A B L E C O N TR O LLERS A C /D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA MINI FLAT COUPLER TLP126 is a small outline coupler, suitable for surface mount assembly.	OCR Scan	PDF	TLP126 TLP126 3750Vrms UL1577, E67349
MP4007 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.	OCR Scan	PDF	MP4007 Ta-25 MP4007
YTF822 Abstract: No abstract text available Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance	OCR Scan	PDF	YTF822 20kXi) YTF822
2N718 Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613 Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for	OCR Scan	PDF	2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
2SK578 Abstract: 2SK57 Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance	OCR Scan	PDF	2SK578 0-22n 0-a25 2SK578 2SK57
transistor 2SK1603 Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all	OCR Scan	PDF	OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
FN521 Abstract: FN 521 UFN522 UFN523 UFN520 Text: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.	OCR Scan	PDF	UFN520 UFN522 UFN523 UFN520 UFN521 UFN522 FN521 FN 521 UFN523
diode SS 3 Abstract: No abstract text available Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS	OCR Scan	PDF	2SK2699 diode SS 3
TRANSISTOR Marking XB PNP Abstract: YTS3906 Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity	OCR Scan	PDF	YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906
YTFP450 Abstract: SC651 Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :	OCR Scan	PDF	YTFP450 VDS-10V, 00A/ps YTFP450 SC651
Untitled Abstract: No abstract text available Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)	OCR Scan	PDF	2SD2079 2SB1381. MAX30
UFNF430 Abstract: diode ed 2437 UFNF432 Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.	OCR Scan	PDF	UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432
ND06 Abstract: No abstract text available Text: TD62801P BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62G01P 8 BIT SHIFT REGISTER/LATCH/DRIVER THERMAL HEAD DRIVER Features • 8 Bit Serial-In Parallel-Out Shift Register/Latch/ 8 Bit Driver Transistors. • Output Current . 70 mA Max.	OCR Scan	PDF	TD62801P TD62G01P TD62801P ND06
tc258c Abstract: No abstract text available Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.	OCR Scan	PDF	250liA 250uA 00A/ys tc258c

Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)	OCR Scan	PDF	2SC3265 2SA1298 O-236MOD SC-59CEO
1117F Abstract: No abstract text available Text: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors	OCR Scan	PDF	RN1112F RN1113F 1117F RN2112F, RN2113F 1117F
MG50G2CL3 Abstract: Mg50G2cl mg50g2 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)	OCR Scan	PDF	MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2
TLP338 Abstract: No abstract text available Text: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.	OCR Scan	PDF	TLP337 TLP338 150mA. 150mA 5000Vrms E67349 TLP338
BU326 Abstract: BU326-BU326A 331Z BU326A st bux Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current	OCR Scan	PDF	BU326, BU326A BU326 BU326-BU326A 331Z st bux
2SK945 Abstract: 2SK9 Text: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)	OCR Scan	PDF	2SK945 2SK945 2SK9
str f 6454 Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454 Text: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453	OCR Scan	PDF	2N64B1 2N6454 2N6451, 2N6453) 2N6453, 2N6454) str f 6454 str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453
2N3051 Abstract: 2N3050 2N2412 2n3049 Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors	OCR Scan	PDF	2N3049, 2N3050, 2N3051 2N2411 2N2412 2N3050 2n3049
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	PDF	HN3C17FU 16GHz
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance	OCR Scan	PDF	2SK2917

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TRANSISTOR Search Results

TRANSISTOR Result Highlights (5)

TRANSISTOR Price and Stock

Gearbox Labs PART-TRANSISTOR-2N2222

Nexperia 2N7002NXAKR

Nexperia PMBT2907A,215

Nexperia 2N7002,215

Nexperia MMBT3906,215

TRANSISTOR Datasheets (110)

TRANSISTOR Datasheets Context Search

Untitled

MP4007

YTF822

2N718

2SK578

transistor 2SK1603

FN521

diode SS 3

TRANSISTOR Marking XB PNP

YTFP450

Untitled

UFNF430

ND06

tc258c

Untitled

1117F

MG50G2CL3

TLP338

BU326

2SK945

str f 6454

2N3051

Untitled

Untitled