D2079
Abstract: 2SD2079 2SB1381
Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)
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2SD2079
2SB1381.
D2079
2SD2079
2SB1381
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2SB1381
Abstract: 2SD2079
Text: SavantIC Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2079 ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SB1381
O-220F
2SD2079
O-220F)
-20mA
-100V;
2SB1381
2SD2079
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2SD2079
Abstract: 2SB1381
Text: JMnic Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications
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2SB1381
O-220F
2SD2079
O-220F)
-20mA
-100V;
2SD2079
2SB1381
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2SB1381
Abstract: 2SD2079
Text: SavantIC Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1381 APPLICATIONS ·High power switching applications
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2SD2079
O-220F
2SB1381
O-220F)
VCCA30V
2SB1381
2SD2079
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Untitled
Abstract: No abstract text available
Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)
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2SD2079
2SB1381.
SC-67
2-10R1A
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DARLINGTON 3A 100V npn
Abstract: 2SB1381 2SD2079
Text: Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications
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2SD2079
O-220F
2SB1381
O-220F)
VCC30V
DARLINGTON 3A 100V npn
2SB1381
2SD2079
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D2079
Abstract: 2SD2079 2SB1381
Text: 2SD2079 東芝トランジスタ シリコンNPN三重拡散形 2SD2079 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 最小 (VCE = 3 V, IC = 3 A)
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2SD2079
2SB1381
SC-67
2-10R1A
20070701-JA
D2079
2SD2079
2SB1381
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D2079
Abstract: 2SB1381 2SD2079
Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)
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2SD2079
2SB1381.
D2079
2SB1381
2SD2079
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2SB1381
Abstract: 2SD2079
Text: Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications
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2SB1381
O-220F
2SD2079
O-220F)
-100V;
2SB1381
2SD2079
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Untitled
Abstract: No abstract text available
Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)
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2SD2079
2SB1381.
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)
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2SD2079
2SB1381.
MAX30
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2SD2079
Abstract: 2SB1381
Text: T O S H IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> High DC Current Gain cn CO O o : h p E (:L) = 2000 (Min.)
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2SD2079
2SB1381.
2SD2079
2SB1381
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OC139
Abstract: No abstract text available
Text: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,
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2SD2079
2SB1381
OC139
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A1046
Abstract: h10u BA 7515
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2079 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain Unit in 10±0.3 : hFE= 2000 Min. (Vc e =3V, Ic =3A) 03.2 ±0.2 s . Low Saturation Voltage: Vc£(sat)=1.5V(Max.)(Ic “3A)
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2SD2079
2SB1381.
A1046
h10u
BA 7515
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2SB1381
Abstract: 2SD2079
Text: TO SH IBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r CO High DC Current Gain cn ro o : ^FE ( 1) = 2000 (Min.)
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2SD2079
2SB1381.
10truments,
2SB1381
2SD2079
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Untitled
Abstract: No abstract text available
Text: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.
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2SB1381
2SD2079.
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Untitled
Abstract: No abstract text available
Text: SILICO N NPN T R IP LE DIFFU SED T Y P E 2SD2079 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain U n it 1 0 ± 0 .3 : hFE=2000(Min.)(Vce=3V, Ic=3A) 0 3 .2 ± 0 .2 in mm 2.7 ± 0 .2
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2SD2079
2SB1381.
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)
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2SD2079
2SB1381.
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2SB1381
Abstract: 2SD2079
Text: TO SH IBA 2SD2079 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS. 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r CO High DC Current Gain cn ro
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2SD2079
2SB1381.
710truments,
2SB1381
2SD2079
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 8 I HIGH PO W ER SW ITCH IN G APPLICATIONS. U n it in mm H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. # 3 -2 ±0 .2 • w - High DC C urren t Gain : hpE = 1500 Min. (Vc e = - 3V, I c = - 2 .5 A ) • Low S aturation Voltage : V C E (sat)= —1.5V (Max.) ( I c = —2.5A)
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2SB1381
2SD2079.
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. ( V C E = —3V, I c = -2 .5 A )
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2SB1381
2SD2079.
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2SB1381
Abstract: 2SD2079
Text: TO SH IBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r • • • High DC Current Gain : hjrF, = 1500 Min. (VCE= —3V, IC= —2.5A) Low Saturation Voltage: V q ^ (sat)“ —1-5V(Max.) (Ic= —2.5A)
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2SB1381
2SD2079.
2SB1381
2SD2079
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