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    2N6453 Price and Stock

    InterFET Corporation 2N6453

    JFETs JFET N-Channel -20V Low Noise
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    Mouser Electronics 2N6453 188
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    2N6453 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6453 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N6453 InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF
    2N6453 InterFET N-Channel J-FETs Scan PDF
    2N6453 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6453 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6453 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6453 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6453 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6453 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6453 Texas Instruments Discrete Devices 1978 Scan PDF

    2N6453 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6453

    Abstract: 2N6454 B-26
    Text: Databook.fxp 1/13/99 2:09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers At 25°C free air temperature:


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    PDF 2N6453, 2N6454 2N6453 NJ132L 2n6453 2N6454 B-26

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


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    PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    2n4117 equivalent

    Abstract: transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A
    Text: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage


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    PDF 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A 2N4117 2N4117A 2N4118 2N4118A 2n4117 equivalent transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A

    NJ132L

    Abstract: 2sk152 equivalent transistor 2sk152 IFN152
    Text: Databook.fxp 1/13/99 2:09 PM Page F-34 F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C


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    PDF NJ132L 2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152 2sk152 equivalent transistor 2sk152

    NPD5564

    Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
    Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership


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    PDF IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638

    str f 6454

    Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
    Text: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453


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    PDF 2N64B1 2N6454 2N6451, 2N6453) 2N6453, 2N6454) str f 6454 str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0


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    PDF 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N64S4 NF5101 2N6449 2N6450

    2N4119

    Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
    Text: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0


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    PDF 2N5556 2N5557 2N5558 2N6451 2N6452 NF5301 2N6449 2N6450 2N4119 NF5102 NF5103 2N6453

    Untitled

    Abstract: No abstract text available
    Text: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj


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    PDF 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N6454 NF5101 NF5102 NF5103

    BF817

    Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
    Text: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N


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    PDF 1270J en-100kHz BF800 3x10-" BF801 T0-72 4x10-" BF802 BF805 6x10-" BF817 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 n channel depletion MOSFET dual gate mosfet in uhf amplifier

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


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    PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    2N6454

    Abstract: No abstract text available
    Text: B 26 9-97 2N 6453, 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • LOW NOISE, HIGH GAIN AMPLIFIERS • LOW NOISE PREAMPLIFIERS Absolute maximum ratings at Ta = 25*C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF 2N6454 2N6453 2N6454

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


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    PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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