TL112 Search Results

TL112 Price and Stock

Filter by Manufacturer


Essentra Components TL-1125 CBL CLIP TWIST LOCK NATURAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL-1125	Bulk	3,122		1	1 $0.22 10 $0.182 100 $0.1482 1000 $0.12078 10000 $0.10957	Buy Now
Mouser Electronics	TL-1125		2,000			1 $0.22 10 $0.182 100 $0.149 1000 $0.12 10000 $0.109	Buy Now
Verical	TL-1125		2,000		1,000	1 - 10 - 100 - 1000 $0.142 10000 $0.1266	Buy Now
Newark	TL-1125	Bulk	1,451		1	1 $0.083 10 $0.083 100 $0.083 1000 $0.083 10000 $0.083	Buy Now
Onlinecomponents.com	TL-1125		2,014			1 - 10 - 100 - 1000 $0.1092 10000 $0.0974	Buy Now

DB Roberts	TL-1125					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	TL-1125		2,014			1 - 10 - 100 - 1000 $0.1092 10000 $0.0974	Buy Now
Mini-Circuits ADTL1-12- 1:1 CORE & WIRE TRANSFORMER, 20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADTL1-12-	Reel	1,000		1,000	1 - 10 - 100 - 1000 $3.744 10000 $3.744	Buy Now
Honeywell Sensing and Control 4TL1-12A SWITCH TOGGLE 4PDT 15A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4TL1-12A	Bulk	51		1	1 $158 10 $136.209 100 $127.812 1000 $127.812 10000 $127.812	Buy Now
Mouser Electronics	4TL1-12A					1 $129.84 10 $127.81 100 $127.81 1000 $127.81 10000 $127.81	Get Quote
Newark	4TL1-12A	Bulk			50	1 $141.28 10 $141.28 100 $141.28 1000 $141.28 10000 $141.28	Buy Now
RS	4TL1-12A	Bulk	47	100 Weeks	1	1 $89.86 10 $89.86 100 $89.86 1000 $89.86 10000 $89.86	Buy Now
TME	4TL1-12A				50	1 - 10 - 100 $147.1 1000 $147.1 10000 $147.1	Get Quote
SOURIAU-SUNBANK UTL1122G1W5S CONN RCPT HSNG F/M 8POS INLINE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UTL1122G1W5S	Bag	42		1	1 $19.66 10 $16.026 100 $19.66 1000 $19.66 10000 $19.66	Buy Now
Newark	UTL1122G1W5S	Bulk			25	1 $19.66 10 $19.66 100 $12.6 1000 $9 10000 $7.7	Buy Now
RS	UTL1122G1W5S	Bulk	25		1	1 $11.24 10 $10.34 100 $8.99 1000 $8.99 10000 $8.99	Buy Now
Bristol Electronics	UTL1122G1W5S		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Interstate Connecting Components	UTL1122G1W5S					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Honeywell Sensing and Control 4TL1-12 SWITCH TOGGLE 4PDT 15A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4TL1-12	Bulk	37		1	1 $107.04 10 $107.04 100 $107.04 1000 $107.04 10000 $107.04	Buy Now
Mouser Electronics	4TL1-12		41			1 $102.76 10 $102.76 100 $102.76 1000 $102.76 10000 $102.76	Buy Now
Newark	4TL1-12	Bulk	1		1	1 $152.88 10 $137.59 100 $111.31 1000 $111.31 10000 $111.31	Buy Now
RS	4TL1-12	Bulk	51	98 Weeks	1	1 $64.24 10 $64.24 100 $64.24 1000 $64.24 10000 $64.24	Buy Now
TME	4TL1-12		2		1	1 $177.58 10 $177.58 100 $177.58 1000 $177.58 10000 $177.58	Buy Now

Master Electronics	4TL1-12		132			1 $138.11 10 $122.33 100 $95.78 1000 $93.32 10000 $93.32	Buy Now

Find more TL112 price and stock on Findchips.com

TL112 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TL-1125		Essentra Components Catalog	Clamps and Clips, Cables, Wires - Management, TWIST-LOK 2.19"		Original	PDF

TL112 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND
TL1 series Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07 Text: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625	Original	PDF	TL1-18 TL1-19 TL1-16 TL1-17 TL1-12 TL1 series TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PDF	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242
TL235 Abstract: No abstract text available Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency	Original	PDF	PTVA030121EA PTVA030121EA H-36265-2 TL235
Untitled Abstract: No abstract text available Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PDF	PTFA091503EL PTFA091503EL 150-watt, H-33288-6
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1
C109 ceramic capacitor Abstract: TL235 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235
PTFB212507SH Abstract: No abstract text available Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB212507SH PTFB212507SH 200-watt
TRANSISTOR tl131 Abstract: tl239 Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PDF	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239
C205 Abstract: No abstract text available Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PDF	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PDF	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152
fet 4712 Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990	Original	PDF	PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PDF	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PDF	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
hy 1418 Abstract: tl117 tl111 Text: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150	Original	PDF	TL1-01 TL1-02 TL1-03 TL1-04 TL1-05 TL1-06 TL1-07 TL1-08 TL1-09 TL1-10 hy 1418 tl117 tl111
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PDF	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PDF	PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

Privacy Settings

TL112 Search Results

TL112 Price and Stock

Essentra Components TL-1125

Mini-Circuits ADTL1-12-

Honeywell Sensing and Control 4TL1-12A

SOURIAU-SUNBANK UTL1122G1W5S

Honeywell Sensing and Control 4TL1-12

TL112 Datasheets (1)

TL112 Datasheets Context Search

TL205

transistor TL131

TL1 series

c102 TRANSISTOR

tl249

TL235

Untitled

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

PTFB090901EA

TL272

TL145

fet 4712

TL225

TRANSISTOR tl131

TRANSISTOR tl131

hy 1418

schematic diagram atx Power supply 500w

PTFB090901EA

c102 TRANSISTOR

TL139