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Brady Worldwide Inc PTL-10-719 LABEL, 0.75 IN H X 0.25 IN W
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DigiKey	PTL-10-719	Bulk			1	1 $216.88 10 $216.88 100 $216.88 1000 $216.88 10000 $216.88	Buy Now
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Brady Worldwide Inc PTL-10-717 LABEL, 0.75 IN H X 0.25 IN W
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DigiKey	PTL-10-717	Bulk			1	1 $256.62 10 $256.62 100 $256.62 1000 $256.62 10000 $256.62	Buy Now
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Brady Worldwide Inc PTL-10-727 LABEL 0.25"HX0.75"W WH 1=750PCS
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DigiKey	PTL-10-727	Bulk			1	1 $236.88 10 $236.88 100 $236.88 1000 $236.88 10000 $236.88	Buy Now
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Brady Worldwide Inc PTL-10-724 LABEL, 0.75 IN H X 0.25 IN W
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DigiKey	PTL-10-724	Bulk			1	1 $262.61 10 $262.61 100 $262.61 1000 $262.61 10000 $262.61	Buy Now
Newark	PTL-10-724	SPOOL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Brady Worldwide Inc PTL-10-718 LABEL, 0.75 IN H X 0.25 IN W
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DigiKey	PTL-10-718	Bulk			1	1 $213.25 10 $213.25 100 $213.25 1000 $213.25 10000 $213.25	Buy Now

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TL107 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
TL1-07	Inductor Supply	Inductor: 141.8u: -12% to 20%: 3: Toroid	Original	PDF
TL107	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
TL107-05	Teccor Electronics	Cross Reference Data to Teccor Part Numbers (See datasheet appendix)	Original	PDF
TL107-05	Unknown	Short Form Datasheet and Cross Reference Data	Short Form	PDF
TL107-05	SGS-Thomson	50V V[drm] Max., 1.6A I[T] Max. Silicon Controlled Rectifier	Scan	PDF
TL107-05	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
TL107-1	Teccor Electronics	Cross Reference Data to Teccor Part Numbers (See datasheet appendix)	Original	PDF
TL107-1	Unknown	Short Form Datasheet and Cross Reference Data	Short Form	PDF
TL107-1	SGS-Thomson	100V V[drm] Max., 1.6A I[T] Max. Silicon Controlled Rectifier	Scan	PDF
TL107-1	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
TL107-2	Teccor Electronics	Cross Reference Data to Teccor Part Numbers (See datasheet appendix)	Original	PDF
TL107-2	Unknown	Short Form Datasheet and Cross Reference Data	Short Form	PDF
TL107-2	SGS-Thomson	200V V[drm] Max., 1.6A I[T] Max. Silicon Controlled Rectifier	Scan	PDF
TL107-2	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF

TL107-4	Teccor Electronics	Cross Reference Data to Teccor Part Numbers (See datasheet appendix)	Original	PDF
TL107-4	Unknown	Short Form Datasheet and Cross Reference Data	Short Form	PDF
TL107-4	SGS-Thomson	400V V[drm] Max., 1.6A I[T] Max. Silicon Controlled Rectifier	Scan	PDF
TL107-4	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
TL107-6	Teccor Electronics	Cross Reference Data to Teccor Part Numbers (See datasheet appendix)	Original	PDF
TL107-6	Unknown	Short Form Datasheet and Cross Reference Data	Short Form	PDF

TL107 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Philips 370 Abstract: 3E25 CBW198 MA01 Text: FERRITE CERAMICS DATA SHEET TL107/65/18 Ferrite ring cores toroids Product specification Supersedes data of 1998 Aug 11 File under Ferrite Ceramics, MA01 2000 Apr 20 Philips Components Product specification Ferrite ring cores (toroids) TL107/65/18 RING CORES (TOROIDS)	Original	PDF	TL107/65/18 Philips 370 3E25 CBW198 MA01
TL107 Abstract: 3E25 CBW198 Text: Philips Components Product specification Ferrite ring cores toroids TL107/65/18 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE Σ(I/A) core factor (C1) 0.700 mm−1 Ve effective volume 96200 mm3 Ie effective length 259 mm Ae effective area	Original	PDF	TL107/65/18 CBW198 TL107/65/18 T107/65/18-3F4 TL107/65/18-3E25 TL107 3E25 CBW198
toroid T107 Abstract: TL107 3E25 CBW198 Text: FERROXCUBE DATA SHEET TL107/65/18 Ferrite toroids Supersedes data of November 2000 2002 Feb 01 Ferroxcube Ferrite toroids TL107/65/18 RING CORES TOROIDS Effective core parameters SYMBOL PARAMETER 107.4 ± 2.1 VALUE UNIT Σ(I/A) core factor (C1) 0.700 mm−1	Original	PDF	TL107/65/18 CBW198 toroid T107 TL107 3E25 CBW198
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND
TL1 series Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07 Text: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625	Original	PDF	TL1-18 TL1-19 TL1-16 TL1-17 TL1-12 TL1 series TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PDF	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242
TL235 Abstract: No abstract text available Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency	Original	PDF	PTVA030121EA PTVA030121EA H-36265-2 TL235
Untitled Abstract: No abstract text available Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PDF	PTFA091503EL PTFA091503EL 150-watt, H-33288-6
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1
C109 ceramic capacitor Abstract: TL235 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235
PTFB212507SH Abstract: No abstract text available Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB212507SH PTFB212507SH 200-watt
TRANSISTOR tl131 Abstract: tl239 Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PDF	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

PHILIPS toroidal core 2P80 Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod Text: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs	Original	PDF	CBW204 TN33/20/11 TN33/20/11-2P40 TN33/20/11-2P50 TN33/20/11-2P65 TN33/20/11-2P80 TN33/20/11-2P90 PHILIPS toroidal core 2P80 PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
E71/33/32-3C90 Abstract: 43120203664 philips rm8 3C85 a250 P14/8-3H1-A315/N 3C80 philips 4330-030-3779 EC35-3c8 ETD29-3C85 P22/13-3B7 ETD34 3C80 Text: MAIN MAIN MENU MENU CONVERSION LIST Philips Components Conversion list Type number to 11NC Conversion list type number to 11NC Product status definitions STATUS INDICATION DEFINITION Prototype PROT These are products that have been made as development samples for the purposes of	Original	PDF	P26/16-3H1-A630/N E55/28/21-3F3 RM6R-3H1-A160 P30/19-3H1-E250 RM6R-3H1-A250 P30/19-3H1-E315 RM6R-3H1-A315 RM6R-3H1-A400 RM6R-3H1-A630 RM8-3H1-E250 E71/33/32-3C90 43120203664 philips rm8 3C85 a250 P14/8-3H1-A315/N 3C80 philips 4330-030-3779 EC35-3c8 ETD29-3C85 P22/13-3B7 ETD34 3C80
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PDF	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PDF	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152
fet 4712 Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990	Original	PDF	PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X
UJT-2N2646 PIN DIAGRAM DETAILS Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402 Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect	OCR Scan	PDF	Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
sensitive gate thyristors Abstract: 698866F CB-274 TL107-05 cb2741 7bl5 TL106-05 TL107 Text: 7flC D \| S G S-TH0Î1S0N 78C 07613 T - ' ï S" - 1 3 •l RM S = 1Æ A /T l = 50°C Vd r m 50V < • Operates directly from low signal (sensitive gate). • • V d r m = V r r m up to 600 V. Glass passivated chip - High stability and reliability. • Fonctionne directement à partir d'un	OCR Scan	PDF	00D7bl3 CB-274) sensitive gate thyristors 698866F CB-274 TL107-05 cb2741 7bl5 TL106-05 TL107

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TL107 Price and Stock

Brady Worldwide Inc PTL-10-719

Brady Worldwide Inc PTL-10-717

Brady Worldwide Inc PTL-10-727

Brady Worldwide Inc PTL-10-724

Brady Worldwide Inc PTL-10-718

TL107 Datasheets (22)

TL107 Datasheets Context Search

Philips 370

TL107

toroid T107

TL205

transistor TL131

TL1 series

c102 TRANSISTOR

tl249

TL235

Untitled

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

PHILIPS toroidal core 2P80

E71/33/32-3C90

PTFB090901EA

TL272

PTFB090901

TL145

fet 4712

TL225

UJT-2N2646 PIN DIAGRAM DETAILS

sensitive gate thyristors