Untitled
Abstract: No abstract text available
Text: OKI Semiconductor ML674000 PEDL674000-02 Issue Date: May. 17, 2002 Preliminary 32-bit General-purpose Single-chip Microcontroller GENERAL DESCRIPTION This LSI incorporates µPLAT-7B, employing the CPU core ARM7TDMI, as the CPU platform and operates at
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ML674000
32-bit
PEDL674000-02
16-bit
32bit
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relay ras 1210
Abstract: ARM TQFP128 str 2062 B800 D800 E800 F400 ML674000 dq15d
Text: USER’S MANUAL O K I A R M - B A S E D M I C R O C O N T R O L L E R P R O D U C T S ML674000 General Purpose ARM -Based Microcontroller January 27, 2003 Preface This Development Specification contains hardware and software specifications of Oki Electric’s ML674000 32-bit
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ML674000
ML674000
32-bit
relay ras 1210
ARM TQFP128
str 2062
B800
D800
E800
F400
dq15d
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DS01182
Abstract: AN1136 AN1182 AN1246 PIC32
Text: AN1246 How to Create Widgets in Microchip Graphics Library Authors: Paolo Tamayo Harold Serrano Microchip Technology Inc. INTRODUCTION The Microchip Graphics Library consists of various, readily usable Widgets which include the functions required in various applications. The Widgets can be
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AN1246
DS01246A-page
DS01182
AN1136
AN1182
AN1246
PIC32
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Untitled
Abstract: No abstract text available
Text: Dear customers, The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008. Therefore, please accept that although the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
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FEUL674000-03
ML674000
32-bit
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str 2062
Abstract: B800 D800 E800 F400 ML674000 INSTRUCTION SET motorola 6800 lcr 0202
Text: FEUL674000-03 ML674000 User’s Manual 32-bit General Purpose ARM-based Microcontroller Issue Date: February 4, 2003 i Preface This Development Specification contains hardware and software specifications of Oki Electric’s ML674000 32-bit microcontroller. The manuals shown below are also available, and should be consulted a necessary.
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FEUL674000-03
ML674000
32-bit
ML674000
32-bit
str 2062
B800
D800
E800
F400
INSTRUCTION SET motorola 6800
lcr 0202
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Untitled
Abstract: No abstract text available
Text: D A TA S H E E T O K I A R M - B A S E D M I C R O C O N T R O L L E R P R O D U C T S M L 67 4 0 0 0 3 2 - B i t A R M - B a s e d G e ne r a l Pu r p o s e M i c r oc o n t r ol l e r October 2002 Document Reference: PEDL674000-02 Oki Semiconductor ML674000
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PEDL674000-02
ML674000
32-Bit
ML674000
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Untitled
Abstract: No abstract text available
Text: USER’S MANUAL O K I M I C R O C O N T R O L L E R P R O D U C T S ML674000 General-Purpose 32-bit Single-Chip Microcontroller July 2002 PLAT-7C ARM7TDMI“ -Based Integration Platform Document Reference: FEUL674000-01 Oki Semiconductor FEUL674000-01 ML674000
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ML674000
32-bit
FEUL674000-01
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YTF640
Abstract: No abstract text available
Text: YTF640 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII I N DUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 0 .3 M AX. . ¡2 ¡3 .6 ± 0 .2 DRIVE APPLICATIONS. . L o w D r a i n - S o u r ce ON
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YTF640
250jiA
20kil)
00A/u
YTF640
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATTALO' N-CHANNEL ENHANCEMENT MOS 500V, 4.5A, 1.5Q SDF430 SDF430 SDF430 JAA JAB JDA FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS:J A A .JAB • L E A D BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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SDF430
B4B-4311
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DS25-.A
Abstract: GA mosfet
Text: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)
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5DF220
SDF220
SDF220
JO/93
DS25-.A
GA mosfet
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Untitled
Abstract: No abstract text available
Text: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous
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SDF17N60
MIL-S-1950-
IF-17A
i/dt-100A/
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Untitled
Abstract: No abstract text available
Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )
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300iiS,
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Untitled
Abstract: No abstract text available
Text: [PRODUCT ^litron CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET 6 0 V , 3 0 A , 0.04 0 ABSOLUTE MAXIMUM RATINGS SDF044 SDF044 PARAMETER JAA JAB FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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SDF044
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: c à t à lq û product N-CHANNEL ENHANCEMENT MOS FET 200V, 9A , 0.415 D SDF230 SDF230 5DF230 FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTIÜN • C ER AM IC EYELETS:JAA.JAB • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES
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SDF230
5DF230
MIL-S-19500
Storage03
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SDF230
Abstract: No abstract text available
Text: PRODUCT CATÄLO Æ \itxon N-CHANNEL ENHANCEMENT MOS FET 200V, 9 A , 0 .4 1 5 D SDF230 SDF230 SDF230 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS:JAA,JAB LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS
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SDF230
SDF230
MIL-S-19500
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SDF440
Abstract: No abstract text available
Text: Æ iitro n PRODUCT DEVICES.INC. ATÂl©' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l Dra in-Ga te Vo 11age (RGS=1.0Mn) (1) Gate-Source Voltage Continuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)
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SDF440
MIL-S-19500
3001iS>
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SDF240
Abstract: No abstract text available
Text: Ætttron PRODUCT DEVICES.INC. CATALO' N-CHANNEL ENHANCEMENT MOS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Dra in-Ga te Vo 11age (R g s = 1.OMn) (1) Gote-Source Voltage Con t inuous Drain Current Continuous (Tc = 2 5 “C)
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SDF240
SDF240
MIL-S-19500
300mS,
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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SDF034
Abstract: No abstract text available
Text: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)
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SDF034
SDF034
MIL-S-19500
fl3bfib02
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Untitled
Abstract: No abstract text available
Text: Æ wtxon 3301 E L E C T R O N I C S WAY, T E L : 407 8 4 8 - 4 3 1 1 CÂTÂL Q D E V IC E S ,IN C . W E S T P A L M BE AC H, F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 S N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER Vo I t . ( 1 )
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SDF240
SDF240
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Untitled
Abstract: No abstract text available
Text: CÄTÄLQQ_ Æiitran nFVŒs ,NC PRODUCT N-CHANNEL ENHANCEMENT MOS FET 400V, 3.3A, 5DF320 SDF320 SDF320 1.8Q RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS: JAA. JAB LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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5DF320
SDF320
SDF320
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irf630
Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve
Text: Standard Power M O SFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power M O S Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A, 150V-200V rDs on = 0.4 Cl and 0.6 fi Features:
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IRF630,
IRF631,
IRF632,
IRF633
50V-200V
IRF632
IRF633
irf630
IPF630
1RF631
IRF631
MOSFET 20V 100A
IFIF631
IFIF633
motor characteristics curve
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SDF420
Abstract: D25A
Text: Æ ntron PRODUCT DEVICES,INC. CÂTÂLO' N -CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 500V, SYMBOL UNITS Drain-source Volt. l Dra in-Gate Vo 1tage (R gs = 1•O M n ) (1) G a te-Souree Vo 1tage Cont inuous Drain Current Continuous (Tc = 25°C)
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300nS,
SDF420
SDF420
MIL-S-19500
D25A
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1F14A
Abstract: SDF120
Text: PRODUCT Æ litron CÂTÂLÛ N-CHANNEL ENHANCEMENT MÜS FET 100V, 9 .2 A , SDF120 SDF120 SDF120 0.27Q ABSOLUTE MAXIMUM RATINGS JAA JAB JDA PARAMETER SCHEMATIC ï dH TE RMINAL CONNECTIONS G 1 GATE 2 DRAIN 3 SOURCE STANDARD BEND CONFIGURATIONS H 1 DRAIN 2 SOURCE
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SDF120
MIL-S-19500
1F14A
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