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    Vishay Intertechnologies TSDF1205-GS08

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    Bristol Electronics TSDF1205-GS08 2,600
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    SDF120 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF120 Solitron Devices VDS (V) = 100, Id Continuous Tc=25C (A) = 9.2, Idm Pulsed (A) = 37, RDS (On) (Ohms... Scan PDF
    SDF120JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JDAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JDAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120JDAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF120NA20 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 120, Idm Pulsed (A) = 480, RDS (On) (Ohms) =... Scan PDF
    SDF120NA20JDU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    1F14A

    Abstract: SDF120
    Text: PRODUCT Æ litron CÂTÂLÛ N-CHANNEL ENHANCEMENT MÜS FET 100V, 9 .2 A , SDF120 SDF120 SDF120 0.27Q ABSOLUTE MAXIMUM RATINGS JAA JAB JDA PARAMETER SCHEMATIC ï dH TE RMINAL CONNECTIONS G 1 GATE 2 DRAIN 3 SOURCE STANDARD BEND CONFIGURATIONS H 1 DRAIN 2 SOURCE


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    PDF SDF120 MIL-S-19500 1F14A

    Untitled

    Abstract: No abstract text available
    Text: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •


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    PDF SDF120 SDF120

    DS16A

    Abstract: No abstract text available
    Text: Æ lltro n PRODUCT D EV I C ES , I NC . 200V. ABSOLUTE MAXIMUM RATINGS PARAMETER U N IT S SYMBOL DRAIN-SOURCE VOLTAGE VDSS 200 Vdc DRAIN-GATE VOLTAGE R g g - 1 . OMn VDGR 200 Vdc VGS ±20 Vdc ID 120 Ade DRAIN CURRENT PULSED 1DM 480 A TOTAL POWER D IS S IP A TIO N


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    PDF SDF120NA20 DS16A

    Untitled

    Abstract: No abstract text available
    Text: Æxitxan PRODUCT DEVICES.INC. 200V, 120A, 0.03n ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE Rgs=1 .OMn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25*C) DRAIN CURRENT PULSED TOTAL POWER DISSIPATION


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    PDF MIL-STD-883 DRAIN10V 300nS.

    SDF120NA20

    Abstract: D403
    Text: Æiltton _ PRODUCT CÂTÂL @ HFVICFS- INC. N-CHANNEL ENHANCEMENT MOS FET 200V, 120A, 0.03Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE RGS=1.0Mn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25'C)


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    PDF SDF120NA20 MIL-STD-883 300iis, D403