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    2SA1163 Price and Stock

    Toshiba America Electronic Components 2SA1163-GR,LF

    TRANS PNP 120V 0.1A SMINI
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    DigiKey 2SA1163-GR,LF Digi-Reel 43,899 1
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    2SA1163-GR,LF Cut Tape 43,899 1
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    2SA1163-GR,LF Reel 42,000 3,000
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    Avnet Americas 2SA1163-GR,LF Reel 20 Weeks 3,000
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    Mouser Electronics 2SA1163-GR,LF 21,493
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    Quest Components 2SA1163-GR,LF 800
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    Toshiba America Electronic Components 2SA1163-BL,LF

    TRANS PNP 120V 0.1A SMINI
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    DigiKey 2SA1163-BL,LF Reel 33,000 3,000
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    2SA1163-BL,LF Cut Tape 32,315 1
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    2SA1163-BL,LF Digi-Reel 32,315 1
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    Avnet Americas 2SA1163-BL,LF Reel 20 Weeks 3,000
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    Mouser Electronics 2SA1163-BL,LF 37,575
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    TTI 2SA1163-BL,LF Reel 3,000
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    Toshiba America Electronic Components 2SA1163GRTE85LF

    Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 2SA1163-GR(TE85L,F)
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    Avnet Americas 2SA1163GRTE85LF Reel 3,000
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    2SA1163GRTE85LF Reel 3,000
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    Toshiba America Electronic Components 2SA1163-GR,LF(T

    Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
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    Verical 2SA1163-GR,LF(T 19,633 400
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    Newark 2SA1163-GR,LF(T Cut Tape 2,495 5
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    Avnet Asia 2SA1163-GR,LF(T 24 Weeks 6,000
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    Chip1Stop 2SA1163-GR,LF(T Cut Tape 19,633
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    Toshiba America Electronic Components 2SA1163-GRTE85LF

    Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
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    Verical 2SA1163-GRTE85LF 3,000 3,000
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    2SA1163 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1163 Kexin Audio Frequency General Purpose Amplifier Applications Original PDF
    2SA1163 Toshiba Japanese - Transistors Original PDF
    2SA1163 TY Semiconductor Audio Frequency General Purpose Amplifier Applications - SOT-23 Original PDF
    2SA1163 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1163 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1163 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1163 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1163 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1163 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1163 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1163 Toshiba TRANS GP BJT PNP 120V 0.1A 3(2-3F1A) Scan PDF
    2SA1163 Toshiba TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPUFIER APPLICATIONS) Scan PDF
    2SA1163 Toshiba PNP transistor Scan PDF
    2SA1163 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SA1163 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SA1163-BL Toshiba 2SA1163 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1163BL Toshiba TRANS GP BJT PNP 120V 0.1A 3(2-3F1A) Scan PDF
    2SA1163-BL,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 120V 0.1A S-MINI Original PDF
    2SA1163-BL(TE85L Toshiba 2SA1163 - Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R Original PDF
    2SA1163BLTE85L Toshiba 2SA1163 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF

    2SA1163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.)


    Original
    PDF 2SA1163 2SC2713

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1163 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High hFE. 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


    Original
    PDF 2SA1163 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


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    PDF 2SA1163 2SC2713

    2SA1163

    Abstract: 2Sc2713
    Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.) ·


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    PDF 2SA1163 2SC2713 2SA1163 2Sc2713

    2SA1163

    Abstract: 2SC2713 25C312
    Text: 2SA1163 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1163 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 : VCEO = −120 V


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    PDF 2SA1163 2SC2713 O-236MOD SC-59 2SA1163 2SC2713 25C312

    2SA1163

    Abstract: hFE CLASSIFICATION Marking
    Text: Transistors SMD Type Silicon PNP Epitaxial Type 2SA1163 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High hFE. 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1


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    PDF 2SA1163 OT-23 2SA1163 hFE CLASSIFICATION Marking

    Untitled

    Abstract: No abstract text available
    Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


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    PDF 2SA1163 2SC2713

    2SA1163

    Abstract: 2SC2713
    Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


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    PDF 2SA1163 2SC2713 2SA1163 2SC2713

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2SA1163

    Abstract: 2SC2713 A1163
    Text: 2SA1163 TO SH IBA 2 S A 1 163 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : V^EO - _ 120V Excellent hFF Linearity : hFE (Ic = -0.1m A) / hFE (Ic = -2m A ) = 0.95 (Typ.)


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    PDF 2SA1163 2SC2713 2SA1163 A1163

    2SA1163

    Abstract: No abstract text available
    Text: 2SA1163 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 1 6 3 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o —_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.)


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    PDF 2SA1163 2SC2713 2SA1163

    2SA1163

    Abstract: 2SC2713 A1163 XL05
    Text: TOSHIBA 2SA1163 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 163 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : + 0.5 2 .5 - 0 .3 V^EO = - 120V Excellent Linearity : hFE (le = -0.1mA) / hFE (ÏC = -2mA) = 0.95 (Typ.)


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    PDF 2SA1163 2SC2713 2SA1163 2SC2713 A1163 XL05

    2SA1163

    Abstract: No abstract text available
    Text: 2SA1163 SILICON PNP EPITAXIAL TYPE Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : VQgQ = —120V Excellent hjrg Linearity : hpE Ic= —0.1mA /hFE (IC = —2mA) = 0.95 (Typ.) High hp~E ; hFE = 200~700 Low Noise : NF = ldB (Typ.), lOdB (Max.)


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    PDF 2SA1163 --120V 2SC2713 O-236MOD SC-59 --10V, 2SA1163

    Untitled

    Abstract: No abstract text available
    Text: 2SA1163 TO SHIBA 2 S A 1 1 63 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : V c e O= —120V Excellent hjrg Linearity : hpE OC = - 0.1mA) / hpE dC = -2mA) = 0.95 (Typ.)


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    PDF 2SA1163 2SC2713

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


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    PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426

    hp 2503

    Abstract: 2SC2713
    Text: SILICON NPN EPITAXIAL TYPE 2SC2713 A U D I O FREQ UENC Y G E N E R A L A P P L IC A T IO N S PUR PO SE A M P L IF IE R Unit in mm + 0i5 2.5-0.3 + Û2 5 1.5— a 15 FEATURES : . High Voltage vCEO =120V Od . Excellent hpg Linearity +I ÊE- : hF E 0.1mA /hpE(2mA)=0.95(Typ.)


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    PDF 2SC2713 2SA1163. hp 2503 2SC2713

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


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    PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


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    PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a

    2SA1163

    Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
    Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry


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    PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825