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    50n05

    Abstract: 150N06 SSW50N05 SSW50N06 SSI50N06 150N0 SSI50N05 of 50N05
    Text: N-CHANNEL POWER MOSFETS SSW50N06/05 SSI50N06/05 FEATURES D*-PAK • Lower Rds<on • Improved Inductive Ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSW50N06/05 SSI50N06/05 SSW50N06/150N06 SSW50N06/I50N05 SSW50N06/50N05 SSI50N06/50N05 SSW50N06 SSI50N06 SSW50N05 SSI50N05 50n05 150N06 150N0 of 50N05 PDF

    irfm014

    Abstract: 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995
    Text: FUNCTION GUIDE MOSFETs SOT-223 N-CHANNEL BVdss V lo|on)(A) Ros(on)( g ) W!¡a(K/W) PD(Watt) Page IRFM014 60 2.70 0.200 40.000 3.1 986 NEW IRFM110 100 1.50 0.540 40.000 3.1 989 NEW B V d s s (V) lD(on)(A) Ros(on)(Q) R0jc(K/W) PD(Watt) Page IRFWZ10 IRFWZ20


    OCR Scan     		OT-223 IRFM014 IRFM110 IRFWZ10 IRFWZ20 IRFWZ30 IRFWZ40 SSW50N05 SSW60N05 IRFWZ14 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995 PDF