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    150N0 Search Results

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    150N0 Price and Stock

    Infineon Technologies AG BSO150N03MDGXUMA1

    MOSFET 2N-CH 30V 8A 8DSO
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    DigiKey BSO150N03MDGXUMA1 Digi-Reel 24,011 1
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    BSO150N03MDGXUMA1 Cut Tape 24,011 1
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    BSO150N03MDGXUMA1 Reel 20,000 2,500
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    Avnet Americas BSO150N03MDGXUMA1 Reel 14 Weeks 2,500
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    Mouser Electronics BSO150N03MDGXUMA1 9,327
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    Newark BSO150N03MDGXUMA1 Cut Tape 5,893 1
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    Rochester Electronics BSO150N03MDGXUMA1 1
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    TME BSO150N03MDGXUMA1 1
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    EBV Elektronik BSO150N03MDGXUMA1 7,500 15 Weeks 2,500
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    Win Source Electronics BSO150N03MDGXUMA1 45,001
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    Diotec Semiconductor AG DI150N04PQ

    MOSFET PWRQFN 5X6 40V 0.0014OHM
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    DigiKey DI150N04PQ Reel 5,000 5,000
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    DI150N04PQ Cut Tape 5,000 1
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    DI150N04PQ Digi-Reel 5,000 1
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    Mouser Electronics DI150N04PQ 4,985
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    TME DI150N04PQ 1
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    Nisshinbo Micro Devices R3150N008B-TR-FE

    IC SUPERVISOR 1 CHANNEL SOT23-6
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    DigiKey R3150N008B-TR-FE Digi-Reel 2,755 1
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    R3150N008B-TR-FE Cut Tape 2,755 1
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    Essentra Components 50M100150N035

    PAN SLOTTED SCREW, M10 X 1.5 THR
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    DigiKey 50M100150N035 Bulk 1,000 1
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    Mouser Electronics 50M100150N035
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    Micro Commercial Components MCB150N06KY-TP

    N-CHANNEL MOSFET, D2-PAK
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    DigiKey MCB150N06KY-TP Digi-Reel 655 1
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    MCB150N06KY-TP Cut Tape 655 1
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    150N0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTQ150N06P

    Abstract: 150N06P 150N06
    Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient ±20


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    PDF 150N06P IXTQ150N06P 150N06P 150N06

    150N06P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM


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    PDF 150N06P 150N06P

    150N06P

    Abstract: 150N06 DS99254E
    Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient


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    PDF 150N06P 150N06P 150N06 DS99254E

    150N06

    Abstract: DS99254
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A Ω = 10 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 150N06P 065B1 728B1 123B1 728B1 150N06 DS99254

    50 amp H-bridge Mosfet

    Abstract: OMS60L60FL OMS120N10FL OMS150N06FL OMS50F60FL 150 amp H-bridge Mosfet
    Text: Preliminary Data Sheet 150N06FL OMS120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMS60L60FL OMS50F60FL 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design


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    PDF OMS150N06FL OMS120N10FL OMS60L60FL OMS50F60FL 50 amp H-bridge Mosfet OMS60L60FL OMS120N10FL OMS150N06FL OMS50F60FL 150 amp H-bridge Mosfet

    150N03

    Abstract: 150N03LD PG-TDSON-8 JESD22 BSC150N03LD
    Text: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications


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    PDF BSC150N03LD 150N03LD 150N03 150N03LD PG-TDSON-8 JESD22

    Untitled

    Abstract: No abstract text available
    Text: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3


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    PDF BSO150N03MD IEC61249-2-21 150N03MD

    150N03

    Abstract: 150N03LD BSC150N03LD IEC61249-2-21 JESD22
    Text: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V DS 30 V • Dual N-channel, logic level R DS on ,max 15 mΩ • Fast switching MOSFETs for SMPS ID 20 A PG-TDSON-8 • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications


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    PDF BSC150N03LD IEC61249-2-21 150N03LD 150N03 150N03LD IEC61249-2-21 JESD22

    150N03

    Abstract: 150N03MD BSO150N03MD IEC61249-2-21 150n03m
    Text: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3 A


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    PDF BSO150N03MD IEC61249-2-21 150N03MD 150N03 150N03MD IEC61249-2-21 150n03m

    150N03

    Abstract: 150N03MD
    Text: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3 A


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    PDF BSO150N03MD 150N03MD 150N03 150N03MD

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 75V / 150A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 150N075T 75V, RDS(ON)=4.5mW@VGS=10V, ID=30A


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    PDF HY150N075T O-220AB 2002/95/EC O-220AB 250mA 125oC -55oC 13-May-2012

    150N03

    Abstract: 150N03LD
    Text: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications


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    PDF BSC150N03LD 150N03LD 150N03 150N03LD

    50 amp H-bridge Mosfet

    Abstract: IGBT/MOSFET Gate Drive OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL 150 amp H-bridge Mosfet
    Text: Preliminary Data Sheet 150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD60L60FL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive


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    PDF OMD150N06FL OMD120N10FL OMD60L60FL OMD50F60FL 50 amp H-bridge Mosfet IGBT/MOSFET Gate Drive OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL 150 amp H-bridge Mosfet

    Untitled

    Abstract: No abstract text available
    Text: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications


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    PDF BSC150N03LD 150N03LD

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    150N03LD

    Abstract: 150N03 BSC150N03LD BSC150N03LD G
    Text: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications


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    PDF BSC150N03LD 150N03LD 150N03LD 150N03 BSC150N03LD G

    150N06

    Abstract: No abstract text available
    Text: Prelim inary Data Sheet 150N06FL OMD6OL6OFL OMD120N10FL QMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 6 0 0 Volt, 50 To 150 A m p M o d u l e s With Int ern al G a t e Drive. H - B r i d g e C o n f i g u r a t i o n FEATURES


    OCR Scan
    PDF OMD150N06FL OMD120N10FL QMD50F60FL 120N10FL 60L60FL 50F60FL 150N06

    45L40

    Abstract: D0205AA 1N3092 150L20A sd150n06p 1N3087
    Text: International göüRectifier Diodes Standard Recovery 150-200 Amps IF S M 1 lF(AV) @ TC Part Num ber Vr r m (V) 1N3111 1N3085 1N3086 1N3087 1N3088 1N3089 1N3090 1N3091 1N3092 1N5162 50 100 200 300 400 500 600 800 1000 1200 150L5A 150L10A 150L20A 150L40A


    OCR Scan
    PDF 1N3111 1N3085 1N3086 1N3087 1N3088 1N3089 1N3090 1N3091 1N3092 1N5162 45L40 D0205AA 150L20A sd150n06p

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary Data Sheet 150N06FL OMS6OL6OFL OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 A m p M odu les. H-B rid g e C o n f i g u r a t i o n FEATURES • • • • • Isolated Heat Sink


    OCR Scan
    PDF OMS150N06FL OMS120N10FL OMS50F60FL S50F60FL 150N06FL 120N10FL 60L60FL 50F60FL

    50 amp H-bridge Mosfet

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V fast recovery diode 600v 120a OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL Linear SOI switch 50F60
    Text: Preliminary Data Sheet 150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD6OL6OFL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive


    OCR Scan
    PDF OMD150N06FL OMD120N10FL OMD50F60FL flciD73 0Q1D11 50 amp H-bridge Mosfet Fast Recovery Bridge Rectifier, 60A, 600V fast recovery diode 600v 120a OMD50F60FL OMD60L60FL Linear SOI switch 50F60

    150N06

    Abstract: oms 450
    Text: Prelim inary Data Sheet 150N06FL OMS6OL6OFL OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 A m p Modules. H -B ri dg e Con fig urat io n FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    OCR Scan
    PDF OMS150N06FL OMS120N10FL OMS50F60FL 150N06FL 120N10FL 60L60FL 50F60FL 150N06 oms 450

    50 amp H-bridge Mosfet

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V TSFL OMS120N10FL OMS150N06FL OMS50F60FL
    Text: 150N06FL Preliminary Data Sheet OMS120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMS6OL6OFL QMS50F60FL 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    OCR Scan
    PDF OMS150N06FL OMS120N10FL OMS50F60FL OMS150N0ts b7AT073 50 amp H-bridge Mosfet Fast Recovery Bridge Rectifier, 60A, 600V TSFL OMS50F60FL

    Gate Drive H-Bridge

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 150N06FL OMD6OL6OFL OMD120N10FL OMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive


    OCR Scan
    PDF OMD150N06FL OMD120N10FL OMD50F60FL 60L60FL 50F60FL b7inD73 Gate Drive H-Bridge