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Mosfet Abstract: SSF2816EB Text: SSF2816EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V	Original	PDF	SSF2816EB SSF2816EB Mosfet
Untitled Abstract: No abstract text available Text: SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V	Original	PDF	GDSSF2816EB SSF2816EB SSF2816EB
Mosfet Abstract: SSF2816EBK Text: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V	Original	PDF	SSF2816EBK SSF2816EBK Mosfet
Untitled Abstract: No abstract text available Text: SSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V	Original	PDF	GDSSF2816EBK SSF2816EBK SSF2816E