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    Mosfet

    Abstract: SSF2814E
    Text: SSF2814E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF SSF2814E SSF2814E SSF2810% Mosfet

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    Abstract: No abstract text available
    Text: SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF GDSSF2814E SSF2814E SSF2814E