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    Mosfet

    Abstract: SSF2418EB
    Text: SSF2418EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected.


    Original     		PDF SSF2418EB SSF2418EB OT23-6 Mosfet

    2418E

    Abstract: No abstract text available
    Text: SSF2418EBK DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram


    Original     		PDF GDSSF2418EBK SSF2418EBK OT23-6 OT23-6 2418E

    Untitled

    Abstract: No abstract text available
    Text: SSF2418B DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram


    Original     		PDF GDSSF2418B SSF2418B OT23-6 OT23-6

    Mosfet

    Abstract: SSF2418B SSF2418
    Text: SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.


    Original     		PDF SSF2418B SSF2418B OT23-6 Mosfet SSF2418

    2418E

    Abstract: SSF2418E SOT23-6 Marking .64 SOT23-6 "battery protection" SOT23-6 MARKING SSF2418 battery protection sot23-6 55A SOT23-6
    Text: SSF2418E DESCRIPTION The SSF2418E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram


    Original     		PDF SSF2418E SSF2418E Rating2000V OT23-6 2418E SOT23-6 Marking .64 SOT23-6 "battery protection" SOT23-6 MARKING SSF2418 battery protection sot23-6 55A SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram


    Original     		PDF GDSSF2418EB SSF2418EB OT23-6 OT23-6

    Mosfet

    Abstract: SSF2418EBK
    Text: SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.


    Original     		PDF SSF2418EBK SSF2418EBK OT23-6 Mosfet

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E