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    SPD30N03 Price and Stock

    Infineon Technologies AG SPD30N03S2L-20

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L-20 Reel 2,500
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    Infineon Technologies AG SPD30N03S2L-10

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L-10 Reel 2,500
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    Infineon Technologies AG SPD30N03S2L-07

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L-07 Reel 2,500
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    Infineon Technologies AG SPD30N03S2L10T

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L10T Reel 2,500
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    Infineon Technologies AG SPD30N03S2L20GBTMA1

    MOSFET N-CH 30V 30A TO252-3
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    Verical SPD30N03S2L20GBTMA1 20,000 1,105
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    SPD30N03S2L20GBTMA1 6,344 1,105
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    SPD30N03S2L20GBTMA1 2,023 1,105
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    Rochester Electronics SPD30N03S2L20GBTMA1 28,367 1
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    Find more SPD30N03 price and stock on Findchips.com

    SPD30N03 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD30N03 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD30N03 Siemens Original PDF
    SPD30N03 Siemens Original PDF
    SPD30N03 Siemens Original PDF
    SPD30N03 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD 30N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD30N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD30N03L Infineon Technologies Original PDF
    SPD30N03L Siemens Original PDF
    SPD30N03L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD30N03S2L07 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-07 Infineon Technologies OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.7m ?, 30A, LL Original PDF
    SPD30N03S2L-07 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.7 mOhm; RDS (on) (max) (@4.5V): 9.8 mOhm; ID (max): 30.0 A; Original PDF
    SPD30N03S2L07GBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30A TO252-3 Original PDF
    SPD30N03S2L07T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A DPAK Original PDF
    SPD30N03S2L-08 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-08 Infineon Technologies MOSFET and Power Drivers, OptiMOS Power Transistor Original PDF
    SPD30N03S2L10 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-10 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-10 Infineon Technologies OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4m ?, 30A, LL Original PDF

    SPD30N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPU30N03L

    Abstract: No abstract text available
    Text: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF SPD30N03L P-TO252 Q67040-S4148-A2 SPU30N03L P-TO251-3-1 Q67040-S4149-A2 SPU30N03L

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11  Low On-Resistance RDS(on)  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10

    TO252 thermal character

    Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
    Text: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-07 PG-TO252-3 SPD30N03S2L-07G 2N03L07 SPD30N03S2L-07 SSPD30N03S2L-07G SPD30N03S2L-07G TO252 thermal character ANPS071E max2958 f1816

    2N03L10

    Abstract: ANPS071E SPD30N03S2L-10
    Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10 2N03L10 ANPS071E

    1412G

    Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
    Text: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-07 P-TO252-3-11 P-TO252-3-11 Q67042-S4091 2N03L07 PG-TO252-3 1412G ANPS071E SPD30N03S2L-07

    2n03l08

    Abstract: P-TO252 SPD30N03S2L-08 max2958
    Text: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated


    Original     		PDF SPD30N03S2L-08 P-TO252 SPD30N03S2L-08 Q67042-S4031 2N03L08 2n03l08 P-TO252 max2958

    2n03l

    Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
    Text: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-07 PG-TO252-3 SPD30N03S2L-07G PG-TO252-3 2N03L07 SPD30N03S2L-07 SSPD30N03S2L-07G SPD30N03S2L-07G 2n03l ANPS071E DT SMD 2N03 spd30n

    2N03L20

    Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
    Text: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated


    Original     		PDF SPD30N03S2L-20 P-TO252-3-1 P-TO252-3-1 Q67042-S4077 2N03L20 BSPD30N03S2L-20, SPD30N03S2L-20 2N03L20 BSPD30N03S2L-20

    2N03L10

    Abstract: P-TO252 SPD30N03S2L-10
    Text: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 P-TO252 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10 2N03L10 P-TO252

    2N03L10

    Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
    Text: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 PG-TO252-3 SPD30N03S2L-10G 2N03L10 SPD30N03S2L-10 2N03L10 TO252 thermal character TO252 rthjc ANPS071E

    2N03L20

    Abstract: No abstract text available
    Text: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 20 mΩ •Logic Level ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature


    Original     		PDF SPD30N03S2L-20 SPD30N03S2L-20 Q67042-S4077 2N03L20 BSPD30N03S2L-20, 2N03L20

    2N03L10

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 PG-TO252-3 SPD30N03S2L-10G 2N03L10 SPD30N03S2L-10 2N03L10

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-20 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 20 mΩ • Logic Level ID 30 A PG- TO252 -3 • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-20 SPD30N03S2L-20G 2N03L20 SPD30N03S2L-20 PG-TO252-3

    SPD30N03

    Abstract: P-TO251-3-1 P-TO252 SPU30N03 Q67040-S4146-A2
    Text: SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on SPD30N03 30 V 30 A 0.015 Ω Pin 1 Pin 2 Pin 3 G D S Package @ VGS VGS = 10 V P-TO252


    Original     		PDF SPD30N03 SPU30N03 P-TO252 Q67040-S4144-A2 P-TO251-3-1 Q67040-S4146-A2 SPD30N03 P-TO252 SPU30N03 Q67040-S4146-A2

    2n03l

    Abstract: SPD30N03S2L-07 2N03 2N03L07 spd30n
    Text: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-07 PG-TO252-3-11 SPD30N03S2L-07 PG-TO252-3-11 Q67042-S4091 2N03L07 726-SPD30N03S2L-07 2n03l 2N03 2N03L07 spd30n

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 P-TO252 Q67042-S4030 2N03L10

    2N03L10

    Abstract: 2N03L
    Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 10 mΩ •Logic Level ID 30 A •N-Channel •Low On-Resistance RDS(on) P- TO252 -3-11 •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, 2N03L10 2N03L

    2n03l10

    Abstract: 2N03L
    Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P-TO252-3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 P-TO252-3-11 SPD30N03S2L-10 P-TO252-3-11 Q67042-S4030 2N03L10 30N03S2L-10 2n03l10 2N03L

    ANPS071E

    Abstract: SPD30N03S2L-07 E30R
    Text: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-07 Q67042-S4091 2N03L07 ANPS071E SPD30N03S2L-07 E30R

    S2530

    Abstract: No abstract text available
    Text: SPD30N03S2L-07 OptiMOS  Buck converter series • N-Channel Product Summary VDS 30 V • Enhancement mode RDS on 6.7 mΩ • Logic Level ID 30 A Feature • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-07 Q67042-S4031 2N03L07 25Vents S2530

    P-TO251-3-1

    Abstract: P-TO252 SPD30N03 SPU30N03 spd30n03a
    Text: SPD30N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • dv/dt rated • 175°C operating temperature


    Original     		PDF SPD30N03 P-TO252 Q67040-S4144-A2 SPU30N03 P-TO251-3-1 Q67040-S4146-A2 P-TO252 SPD30N03 SPU30N03 spd30n03a

    N03L08

    Abstract: P-TO252 SPD30N03S2L-08
    Text: Preliminary data SPD30N03S2L-08 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 30 V • Drain-source on-state resistance RDS on 7.5 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated


    Original     		PDF SPD30N03S2L-08 SPD30N03S2L-08 P-TO252 Q67042-S4031 N03L08 N03L08 P-TO252

    transistor SMD QQ

    Abstract: No abstract text available
    Text: SPD30N03L SPU30N03L SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • Logic Level • dvld t rated • 175°C operating temperature Type ^DS 30 V SPD30N03L b 30 A SPU30N03L f f DS on (5) VGS Pin 1 Pin 2 Pin 3 G D


    OCR Scan     		PDF SPD30N03L SPU30N03L P-T0252 Q67040-S4148-A2 P-T0251 Q67040-S4149-A2 transistor SMD QQ

    smd diode code pj 70

    Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
    Text: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V


    OCR Scan     		PDF SPD30N03 SPU30N03 VPT09Q50 VPT09051 P-T0252 Q67040-S4144-A2 P-T0251-3-1 Q67040-S4146-A2 smd diode code pj 70 uras 10 pj 68 SMD diode smd diode code pj 50