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    2N03 Search Results

    2N03 Result Highlights (5)

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    NP82N03PUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP82N03PUG-E2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP82N03PUG-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP82N03PUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP82N03KDF-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2N03 Price and Stock

    Taiwan Semiconductor TSM042N03CS-RLG

    MOSFET N-CHANNEL 30V 30A 8SOP
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    DigiKey TSM042N03CS-RLG Digi-Reel 14,177 1
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    TSM042N03CS-RLG Cut Tape 14,177 1
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    Micro Commercial Components MCQ12N03HE3-TP

    POWER MOSFET
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    Torex Semiconductor LTD XP232N0301TR-G

    MOSFET N-CH 30V 300MA SOT23
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    Infineon Technologies AG BSC042N03MSGATMA1

    MOSFET N-CH 30V 17A/93A TDSON
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    onsemi FDMC012N03

    MOSFET N-CH 30V 35A/185A POWER33
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    Mouser Electronics FDMC012N03 1,831
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    EBV Elektronik FDMC012N03 27 Weeks 3,000
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    2N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Mask Set Errata 2N03G Rev. 15 APR 2013 Mask Set Errata for Mask 2N03G Introduction This report applies to mask 2N03G for these products: • KINETIS Errata ID Errata Title 5706 FTFx: MCU security is inadvertently enabled secured if a mass erase is executed when the flash blocks/


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    PDF 2N03G 2N03G

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Mask Set Errata 2N03G Rev 15 AUG 2013 Mask Set Errata for Mask 2N03G Introduction This report applies to mask 2N03G for these products: • KINETIS Errata ID Errata Title 5706 FTFx: MCU security is inadvertently enabled secured if a mass erase is executed when the flash blocks/


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    PDF 2N03G 2N03G

    2N03L05

    Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
    Text: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)


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    PDF SPP80N03S2L-05 SPB80N03S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4033 2N03L05 P-TO263-3-2 2N03L05 154W SPB80N03S2L-05 SPP80N03S2L-05

    SMD DIODE 615 200A

    Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
    Text: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m ID 80 A P-TO263-3-2 Type


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    PDF SPP80N03S2-03 SPB80N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4247 2N0303 P-TO263-3-2 SMD DIODE 615 200A 2N0303 SPB80N03S2-03 SPP80N03S2-03

    2N03L06

    Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
    Text: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m ID 80


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    PDF SPI80N03S2L-06 SPP80N03S2L-06 SPB80N03S2L-06 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N03S2L-06 Q67042-S4088 2N03L06 2N03L06 s4089 SPB80N03S2L-06 SPI80N03S2L-06 OPTIMOS

    SPB42N03S2L-15

    Abstract: SPP42N03S2L-15
    Text: 2N03S2L-15 2N03S2L-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature 30 VDS • N-Channel RDS on • Enhancement mode P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) 12.4 mΩ 42 ID • Logic Level V A P-TO220-3-1


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    PDF SPP42N03S2L-15 SPB42N03S2L-15 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4034 2N03L15 P-TO263-3-2 SPB42N03S2L-15 SPP42N03S2L-15

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11  Low On-Resistance RDS(on)  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance


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    PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10

    2N03L10

    Abstract: marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10
    Text: IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 10 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


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    PDF IPD30N03S2L-10 PG-TO252-3-11 2N03L10 2N03L10 marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10

    2N03L20

    Abstract: 2n03l ANPS071E IPD30N03S2L-20 PG-TO252-3-11
    Text: IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 20 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


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    PDF IPD30N03S2L-20 PG-TO252-3-11 2N03L20 2N03L20 2n03l ANPS071E IPD30N03S2L-20 PG-TO252-3-11

    TO252 thermal character

    Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
    Text: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature


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    PDF SPD30N03S2L-07 PG-TO252-3 SPD30N03S2L-07G 2N03L07 SPD30N03S2L-07 SSPD30N03S2L-07G SPD30N03S2L-07G TO252 thermal character ANPS071E max2958 f1816

    2n03l03

    Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
    Text: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


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    PDF SPI80N03S2L-03 SPP80N03S2L-03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4248 Q67040-S4259 2N03L03 Q67042-S4078 2n03l03 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 INFINEON PART MARKING to263

    2N03L10

    Abstract: ANPS071E SPD30N03S2L-10
    Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


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    PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10 2N03L10 ANPS071E

    Untitled

    Abstract: No abstract text available
    Text: IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 6.7 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


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    PDF IPD30N03S2L-07 PG-TO252-3-11 2N03L07

    1412G

    Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
    Text: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature


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    PDF SPD30N03S2L-07 P-TO252-3-11 P-TO252-3-11 Q67042-S4091 2N03L07 PG-TO252-3 1412G ANPS071E SPD30N03S2L-07

    2N03L10

    Abstract: 2N03L
    Text: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P- TO251 -3-1 Superior thermal resistance


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    PDF SPU30N03S2L-10 SPU30N03S2L-10 Q67042-S4042 2N03L10 BSPU30N03S2L-10, 2N03L10 2N03L

    2N0308

    Abstract: No abstract text available
    Text: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance


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    PDF SPU30N03S2-08 SPU30N03S2-08 Q67042-S4140 2N0308 BSPU30N03S2-08, 2N0308

    2n03l08

    Abstract: P-TO252 SPD30N03S2L-08 max2958
    Text: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated


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    PDF SPD30N03S2L-08 P-TO252 SPD30N03S2L-08 Q67042-S4031 2N03L08 2n03l08 P-TO252 max2958

    Untitled

    Abstract: No abstract text available
    Text: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to


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    PDF AK5730] AK5730 AK5730 65Vrms, 100dB 48kHz MS1577-E-01

    2n03l

    Abstract: 2n03l03 2N03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4259
    Text: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on max. SMD version 2.8 mΩ ID 80 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM)


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    PDF SPP80N03S2L-03 SPB80N03S2L-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4248 2N03L03 P-TO263-3-2 2n03l 2n03l03 2N03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4259

    2n03l10

    Abstract: SPB73N03S2L-10 SPP73N03S2L-10
    Text: SPP73N03S2L-10 SPB73N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 8 mΩ ID 73 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) P-TO220-3-1 •=Superior thermal resistance


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    PDF SPP73N03S2L-10 SPB73N03S2L-10 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4037 2N03L10 P-TO263-3-2 2n03l10 SPB73N03S2L-10 SPP73N03S2L-10

    2n03l

    Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
    Text: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature


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    PDF SPD30N03S2L-07 PG-TO252-3 SPD30N03S2L-07G PG-TO252-3 2N03L07 SPD30N03S2L-07 SSPD30N03S2L-07G SPD30N03S2L-07G 2n03l ANPS071E DT SMD 2N03 spd30n

    2N03L20

    Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
    Text: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated


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    PDF SPD30N03S2L-20 P-TO252-3-1 P-TO252-3-1 Q67042-S4077 2N03L20 BSPD30N03S2L-20, SPD30N03S2L-20 2N03L20 BSPD30N03S2L-20

    TO-18 amps pnp transistor

    Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
    Text: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251


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    PDF OT-23 TO-18 amps pnp transistor sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06

    JAN2N4033

    Abstract: JANTX2N2907 2N390E 2N4033 HS2907A
    Text: Microsemi Microsemi Division Package Outline kype iif PNP 2N2907A HS2907A JAN2N2907A JANTX2N2907A JANTXV2N2907 HS5087 HS3904 HS3906 2N4029 JAN2N4029 JANTX2N4029 JANTXV2N4029 2N390E 2N4403 PN2907A 2N3811L JANTX2N3810 JANTX2N3810L JANTX2N3811 JANTX2N3811L JANTXV2N3810


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    PDF