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    Vishay Siliconix SIR864DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
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    SIR864DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR864DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO-8 Original PDF

    SIR864DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    434474-1

    Abstract: 70733
    Text: SiR864DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR864DP AN609, 8818m 6348m 6218m 0559m 3721m 3204m 4618m 434474-1 70733 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR864DP 2002/95/EC SiR864DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR864DP 2002/95/EC SiR864DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR864DP 2002/95/EC SiR864DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR864DP 2002/95/EC SiR864DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR864DP 2002/95/EC SiR864DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR864DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR864DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR864DP 2002/95/EC SiR864DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR864DP 18-Jul-08 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF