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Vishay Siliconix SIR864DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR864DP-T1-GE3	Digi-Reel			1	1 $1.03 10 $1.03 100 $1.03 1000 $1.03 10000 $1.03	Buy Now
	SIR864DP-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIR864DP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIR864DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR864DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO-8		Original	PDF

SIR864DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
434474-1 Abstract: 70733 Text: SiR864DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiR864DP AN609, 8818m 6348m 6218m 0559m 3721m 3204m 4618m 434474-1 70733	PDF
Untitled Abstract: No abstract text available Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR864DP 2002/95/EC SiR864DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR864DP 2002/95/EC SiR864DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR864DP 2002/95/EC SiR864DP-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR864DP 2002/95/EC SiR864DP-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR864DP 2002/95/EC SiR864DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR864DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR864DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR864DP 2002/95/EC SiR864DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR864DP 18-Jul-08	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF