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Vishay Siliconix SIHP6N40D-GE3 MOSFET N-CH 400V 6A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP6N40D-GE3	Tube	990		1	1 $1.67 10 $1.67 100 $1.67 1000 $0.55886 10000 $0.55886	Buy Now
Vishay Siliconix SIHP6N40D-BE3 N-CHANNEL 400V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP6N40D-BE3	Tube	975		1	1 $1.67 10 $1.67 100 $1.67 1000 $0.55886 10000 $0.55886	Buy Now
Vishay Siliconix SIHP6N40D-E3 MOSFET N-CH 400V 6A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP6N40D-E3	Tube			1,000	1 - 10 - 100 - 1000 $0.68048 10000 $0.68048	Buy Now
Bristol Electronics	SIHP6N40D-E3		1,550			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHP6N40D-BE3 N-Channel 400V \|Vishay SIHP6N40D-BE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SIHP6N40D-BE3	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TTI	SIHP6N40D-BE3	Tube			1,000	1 - 10 - 100 - 1000 $0.418 10000 $0.41	Buy Now
Vishay Intertechnologies SIHP6N40D-GE3 Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 104W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHP6N40D-GE3				1	1 $1.004 10 $0.842 100 $0.658 1000 $0.513 10000 $0.513	Get Quote

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SIHP6N40D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHP6N40D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6A TO-220AB		Original	PDF
SIHP6N40D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6A TO-220AB		Original	PDF

SIHP6N40D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18	Original	PDF	SiHP6N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18	Original	PDF	SiHP6N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18	Original	PDF	SiHP6N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
sihp6n40d Abstract: No abstract text available Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18	Original	PDF	SiHP6N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18	Original	PDF	SiHP6N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP6N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHP6N40D AN609, 4627m 7068m 1194m 8255u 0476m 0328m 1612m 0444m
Untitled Abstract: No abstract text available Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18	Original	PDF	SiHP6N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	PDF	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836