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    SIHP6N40D Search Results

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    SIHP6N40D Price and Stock

    Vishay Siliconix SIHP6N40D-GE3

    MOSFET N-CH 400V 6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP6N40D-GE3 Tube 990 1
    • 1 $1.67
    • 10 $1.67
    • 100 $1.67
    • 1000 $0.55886
    • 10000 $0.55886
    		Buy Now

    Vishay Siliconix SIHP6N40D-BE3

    N-CHANNEL 400V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP6N40D-BE3 Tube 975 1
    • 1 $1.67
    • 10 $1.67
    • 100 $1.67
    • 1000 $0.55886
    • 10000 $0.55886
    		Buy Now

    Vishay Siliconix SIHP6N40D-E3

    MOSFET N-CH 400V 6A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP6N40D-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.68048
    • 10000 $0.68048
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    Bristol Electronics SIHP6N40D-E3 1,550
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    Vishay Intertechnologies SIHP6N40D-BE3

    N-Channel 400V |Vishay SIHP6N40D-BE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIHP6N40D-BE3 Bulk 1,000
    • 1 -
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    TTI SIHP6N40D-BE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.418
    • 10000 $0.41
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    Vishay Intertechnologies SIHP6N40D-GE3

    Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 104W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHP6N40D-GE3 1
    • 1 $1.006
    • 10 $0.844
    • 100 $0.659
    • 1000 $0.525
    • 10000 $0.525
    		Get Quote
    Find more SIHP6N40D price and stock on Findchips.com

    SIHP6N40D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP6N40D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6A TO-220AB Original PDF
    SIHP6N40D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6A TO-220AB Original PDF

    SIHP6N40D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18


    Original     		SiHP6N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18


    Original     		SiHP6N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18


    Original     		SiHP6N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sihp6n40d

    Abstract: No abstract text available
    Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18


    Original     		SiHP6N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18


    Original     		SiHP6N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP6N40D AN609, 4627m 7068m 1194m 8255u 0476m 0328m 1612m 0444m PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18


    Original     		SiHP6N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF