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    SIHG20N50E Price and Stock

    Vishay Siliconix SIHG20N50E-GE3

    MOSFET N-CH 500V 19A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG20N50E-GE3 Tube 489 1
    • 1 $3.41
    • 10 $2.245
    • 100 $3.41
    • 1000 $1.475
    • 10000 $1.475
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    Vishay Intertechnologies SIHG20N50E-GE3

    N-CHANNEL 500V - Bulk (Alt: SIHG20N50E-GE3)
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    Avnet Americas SIHG20N50E-GE3 Bulk 19 Weeks 500
    • 1 -
    • 10 -
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    • 1000 $1.45142
    • 10000 $1.38824
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    Mouser Electronics SIHG20N50E-GE3 808
    • 1 $3.41
    • 10 $2.25
    • 100 $1.59
    • 1000 $1.47
    • 10000 $1.47
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    TTI SIHG20N50E-GE3 Tube 2,000 50
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    • 100 $1.56
    • 1000 $1.48
    • 10000 $1.48
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    TME SIHG20N50E-GE3 1
    • 1 $3.01
    • 10 $2.7
    • 100 $2.14
    • 1000 $2
    • 10000 $2
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    EBV Elektronik SIHG20N50E-GE3 20 Weeks 25
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    SIHG20N50E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG20N50E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 19A TO-247AC Original PDF

    SIHG20N50E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHG20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.184 92 Qgs (nC) 10 Qgd (nC) 19


    Original
    PDF SiHG20N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG20N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SiHG20N50E AN609, 7006u 8346m 1570m 8207m 07-Oct-14

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / January 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: [email protected] 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology Feature Extremely Low Conduction and Switching Losses Product Benefits:


    Original
    PDF O-220, O-252, O-263, O-247AC, O-220 SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E