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    SIHB12N50E Price and Stock

    Vishay Siliconix SIHB12N50E-GE3

    MOSFET N-CH 500V 10.5A D2PAK
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    DigiKey SIHB12N50E-GE3 Bulk 1,000
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    Vishay Intertechnologies SIHB12N50E-GE3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHB12N50E-GE3)
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    Avnet Americas SIHB12N50E-GE3 Reel 13 Weeks 1,000
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    Mouser Electronics SIHB12N50E-GE3 1,039
    • 1 $2.3
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    TTI SIHB12N50E-GE3 Tube 1,000
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    EBV Elektronik SIHB12N50E-GE3 14 Weeks 50
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    SIHB12N50E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB12N50E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 10.5A TO-263 Original PDF

    SIHB12N50E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHB12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 550 VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10


    Original     		PDF SiHB12N50E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB12N50E AN609, 2845u 1569m 1891m 8738m 07-Oct-14

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / January 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: [email protected] 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology Feature Extremely Low Conduction and Switching Losses Product Benefits:


    Original     		PDF O-220, O-252, O-263, O-247AC, O-220 SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E