Si3471DV
Abstract: No abstract text available
Text: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3471DV
03-Mar-03
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Si3471DV
Abstract: Si3471DV-T1 Si3471DV-T1-E3
Text: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free
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Si3471DV
Si3471DV-T1
Si3471DV-T1-E3
S-60422-Rev.
20-Mar-06
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Untitled
Abstract: No abstract text available
Text: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free
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Si3471DV
Si3471DV-T1
Si3471DV-T1-E3
08-Apr-05
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Si3471DV
Abstract: Si3471DV-T1-E3 si3471
Text: Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated
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Si3471DV
2002/95/EC
Si3471DV-T1-E3
Si3471DV-T1-GE3
18-Jul-08
si3471
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Si3471DV
Abstract: No abstract text available
Text: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3471DV
18-Jul-08
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Si3471CDV-T1-E3
Abstract: Si3471DV Si3471DV-T1 Si3471DV-T1-E3 mosfet 23 Tsop-6
Text: Specification Comparison Vishay Siliconix Si3471CDV vs. Si3471DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3471CDV-T1-E3 replaces Si3471DV-T1-E3 Si3471CDV-T1-E3 replaces Si3471DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si3471CDV
Si3471DV
Si3471CDV-T1-E3
Si3471DV-T1-E3
Si3471DV-T1
05-May-08
mosfet 23 Tsop-6
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33-8666
Abstract: mosfet 4456 AN609 Si3471DV
Text: Si3471DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3471DV
AN609
13-Mar-07
33-8666
mosfet 4456
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Si3471DV
Abstract: Si3471DV-T1 Si3471DV-T1-E3
Text: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free
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Si3471DV
Si3471DV-T1
Si3471DV-T1-E3
18-Jul-08
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Si3471DV
Abstract: No abstract text available
Text: Si3471DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET: 1.8-V Rated rDS(on) (W) ID (A) 0.031 @ VGS = - 4.5 V - 6.8 0.040 @ VGS = - 2.5 V - 6.0 0.053 @ VGS = - 1.8 V - 5.2 APPLICATIONS
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Si3471DV
S-03183--Rev.
17-Feb-03
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Untitled
Abstract: No abstract text available
Text: Si3471DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET: 1.8-V Rated rDS(on) (W) ID (A) 0.031 @ VGS = - 4.5 V - 6.8 0.040 @ VGS = - 2.5 V - 6.0 0.053 @ VGS = - 1.8 V - 5.2 APPLICATIONS
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Si3471DV
08-Apr-05
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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