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    SI3471CDV Search Results

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    SI3471CDV Price and Stock

    Vishay Intertechnologies SI3471CDV-T1-E3

    MOSFETs 12V 8.0A 3.8W 27mohm @ 4.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI3471CDV-T1-E3
    • 1 $0.62
    • 10 $0.53
    • 100 $0.396
    • 1000 $0.248
    • 10000 $0.19
    		Get Quote

    Vishay Intertechnologies SI3471CDV-T1-GE3

    MOSFETs 12V 8.0A 3.8W 27mohm @ 4.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI3471CDV-T1-GE3
    • 1 $0.62
    • 10 $0.53
    • 100 $0.396
    • 1000 $0.248
    • 10000 $0.19
    		Get Quote

    SI3471CDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2732

    Abstract: S8175
    Text: SPICE Device Model Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3471CDV 18-Jul-08 A2732 S8175

    1094 m

    Abstract: AN609
    Text: Si3471CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3471CDV AN609 25-Mar-08 1094 m

    Untitled

    Abstract: No abstract text available
    Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 11-Mar-11

    Si3471CDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)


    Original     		PDF Si3471CDV Si3471CDV-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3471CDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)


    Original     		PDF Si3471CDV Si3471CDV-T1-E3 18-Jul-08

    Si3471CDV-T1-E3

    Abstract: Si3471DV Si3471DV-T1 Si3471DV-T1-E3 mosfet 23 Tsop-6
    Text: Specification Comparison Vishay Siliconix Si3471CDV vs. Si3471DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3471CDV-T1-E3 replaces Si3471DV-T1-E3 Si3471CDV-T1-E3 replaces Si3471DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3471CDV Si3471DV Si3471CDV-T1-E3 Si3471DV-T1-E3 Si3471DV-T1 05-May-08 mosfet 23 Tsop-6

    Si3471CDV-T1-E3

    Abstract: SI3471CDV 285mm
    Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 18-Jul-08 285mm

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250