diode N1004
Abstract: CPH5812 MCH3317 N1004 SBS010M TA-3787 74674
Text: CPH5812 Ordering number : ENN7467A CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.
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CPH5812
ENN7467A
MCH3317)
SBS010M)
diode N1004
CPH5812
MCH3317
N1004
SBS010M
TA-3787
74674
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7472 SBS010M Schottky Barrier Diode SBS010M 15V, 2A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1305A [SBS010M] 0.15 2 1 0.65 0.07 1.6 3 0.25 • Low forward voltage (IF=0.5A, VF max=0.32V)
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ENN7472
SBS010M
SBS010M]
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Untitled
Abstract: No abstract text available
Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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ENN7702
CPH5822
MCH3312)
SBS010M)
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N7472
Abstract: SBS010M
Text: SBS010M 注文コード No. N 7 4 7 2 A 三洋半導体データシート 半導体ニューズ No. N7472 とさしかえてください。 SBS010M ショットキバリアダイオード 15V, 2A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SBS010M
N7472
100mA,
600mm2
TB-00001016
TA-100516
IT05881
IT05882
IT08545
N7472
SBS010M
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diode N1004
Abstract: N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603
Text: CPH5812 Ordering number : EN7467B SANYO Semiconductors DATA SHEET CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M)
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CPH5812
EN7467B
MCH3317)
SBS010M)
diode N1004
N1004 diode
CPH5812
n1004
TA-3787
MCH3317
SBS010M
N2603
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diode N1004
Abstract: CPH5822 MCH3312 N1004 SBS010M
Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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CPH5822
ENN7702A
MCH3312)
SBS010M)
diode N1004
CPH5822
MCH3312
N1004
SBS010M
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AN 7468
Abstract: diode N1004 ic 74682 TA-3804 CPH5813 MCH3318 N1004 SBS010M 74682
Text: CPH5813 Ordering number : ENN7468A CPH5813 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3318 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.
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CPH5813
ENN7468A
MCH3318)
SBS010M)
AN 7468
diode N1004
ic 74682
TA-3804
CPH5813
MCH3318
N1004
SBS010M
74682
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CPH5835
Abstract: MCH3309 MCH5835 SBS010M
Text: CPH5835 注文コード No. N 8 2 0 7 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5835 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ MCH3309 とショットキバリアダイオード( SBS010M)を 1 パッケージに
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CPH5835
MCH3309)
SBS010M)
600mm2
12805PE
TB-00001006
IT05882
IT05881
CPH5835
MCH3309
MCH5835
SBS010M
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82074
Abstract: CPH5835 MCH3309 MCH5835 SBS010M
Text: CPH5835 注文コード No. N 8 2 0 7 三洋半導体データシート N CPH5835 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ MCH3309 とショットキバリアダイオード( SBS010M)を 1 パッケージに
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CPH5835
MCH3309)
SBS010M)
600mm2
12805PE
TB-00001006
IT05882
IT05881
82074
CPH5835
MCH3309
MCH5835
SBS010M
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SBS010M
Abstract: No abstract text available
Text: SBS010M Ordering number : ENN7472A SBS010M Schottky Barrier Diode 15V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.5A, VF max=0.32V) (IF=1.0A, VF max=0.35V).
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SBS010M
ENN7472A
SBS010M
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N7472
Abstract: SBS010M
Text: SBS010M 注文コード No. N 7 4 7 2 A 三洋半導体ニューズ 半導体ニューズ No. N7472 とさしかえてください。 SBS010M ショットキバリアダイオード 15V, 2A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SBS010M
N7472
100mA,
600mm2
TB-00001016
TA-100516
IT05881
IT05882
IT08545
N7472
SBS010M
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MCH3406
Abstract: SBS010M CPH5831
Text: CPH5831 Ordering number : ENN8220 CPH5831 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converters. Composite type with a N-Channel Silicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS010M) contained
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CPH5831
ENN8220
MCH3406)
SBS010M)
MCH3406
SBS010M
CPH5831
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CPH3309
Abstract: CPH5835 MCH5835 SBS010M
Text: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained
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CPH5835
ENN8207
CPH3309)
SBS010M)
CPH3309
CPH5835
MCH5835
SBS010M
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Untitled
Abstract: No abstract text available
Text: R1 2 4 5 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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EA-269-130322
R1245x
R1245
Room403,
Room109,
10F-1,
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74682
Abstract: 74684 74685 CPH5813 MCH3318 SBS010M
Text: 注文コード No. N 7 4 6 8 CPH5813 No. N 7 4 6 8 32803 新 CPH5813 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・P チャネル MOS 形電界効果トランジスタ（MCH3318）とショットキバリアダイオード（SBS010M）を
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CPH5813
MCH3318
SBS010M
600mm2
IT05881
IT05883
IT00625
IT00626
74682
74684
74685
CPH5813
MCH3318
SBS010M
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74674
Abstract: CPH5812 MCH3317 SBS010M TA-3787
Text: Ordering number : ENN7467 CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5812 DC / DC Converter Applications 4 0.15 3 0.6 5 0.2 [CPH5812] 2.9 0.05 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 • Composite type with a P-Channel Sillicon MOSFET
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ENN7467
CPH5812
CPH5812]
MCH3317)
SBS010M)
74674
CPH5812
MCH3317
SBS010M
TA-3787
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CPH5831
Abstract: MCH3406 SBS010M cph58
Text: CPH5831 注文コード No. N 8 2 2 0 三洋半導体データシート N CPH5831 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用
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CPH5831
MCH3406)
SBS010M
600mm2
12805PE
TA-100797
IT08545
IT00625
CPH5831
MCH3406
cph58
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DFN2020-8
Abstract: EMK212 NR6020T4R7M R1245S003-E2-FE Nippon capacitors R1245N001-TR-FE
Text: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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R1245x
EA-269-130322
R1245
Room403,
Room109,
DFN2020-8
EMK212
NR6020T4R7M
R1245S003-E2-FE
Nippon capacitors
R1245N001-TR-FE
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Taiyo 93-R 503
Abstract: NR4018T land pattern hsop 8 nr4018 NR6020T4R7M Nippon capacitors 269111-1 R1245N001-TR-FE
Text: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-111130 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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R1245x
EA-269-111130
R1245
Room403,
Room109,
Taiyo 93-R 503
NR4018T
land pattern hsop 8
nr4018
NR6020T4R7M
Nippon capacitors
269111-1
R1245N001-TR-FE
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153 tss
Abstract: R1243S001-E2-FE GRM32EB31C476KE GRM32EB31C476K r1243
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-100512 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-100512
Room403,
Room109,
153 tss
R1243S001-E2-FE
GRM32EB31C476KE
GRM32EB31C476K
r1243
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SBE001
Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP
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ECSP1006-2
ECSP1008-2
ECSP1608-4
SB30W03T
SB40W03T
SB10W05T
SB25W05T
SBE001
SB20015M
SS2003M
SS3003CH
ec2d02b
SB007-W03C
SB10015M
SBS004M
ss200
SS10015M
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R1243S001-E2-FE
Abstract: GRM32EB31C476KE R1243 NR6045T100M NR6028T GRM31CR71E106K UMK325BJ106MM-T grm32eb31c476ke15 R1243K001-TR
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-110406 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-110406
Room403,
Room109,
10F-1,
R1243S001-E2-FE
GRM32EB31C476KE
R1243
NR6045T100M
NR6028T
GRM31CR71E106K
UMK325BJ106MM-T
grm32eb31c476ke15
R1243K001-TR
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Untitled
Abstract: No abstract text available
Text: R1245x Series AEC-Q100 Grade 2 Certified 1.2 A, 30 V Step Down DC/DC Converter for Automotive Applications NO. EC-269-140311 OUTLINE The R1245x is a Step-down DC/DC converter with internal N-channel high side Tr. That is developed with CMOS process technology. The ON resistance of the built-in high-side transistor is 0.35 Ω and the R1245x can
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R1245x
AEC-Q100
EC-269-140311
Room403,
Room109,
10F-1,
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74674
Abstract: CPH5812 MCH3317 N1004 SBS010M N2603
Text: CPH5812 注文コード No. N 7 4 6 7 B 三洋半導体データシート 半導体ニューズ No. N7467A をさしかえてください。 CPH5812 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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CPH5812
N7467A
MCH3317
SBS010M
600mm2
73106PE
TC-00000083
N1004
N2603
74674
CPH5812
MCH3317
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