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    S12N6 Search Results

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    S12N6 Price and Stock

    Toshiba America Electronic Components TRS12N65FB,S1Q

    DIODE ARR SIC SCHOTT 650V TO247
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    DigiKey TRS12N65FB,S1Q Tube 53 1
    • 1 $5.7
    • 10 $5.7
    • 100 $3.225
    • 1000 $2.28247
    • 10000 $2.27125
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    Avnet Americas TRS12N65FB,S1Q Tube 24 Weeks 30
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    • 100 $2.70733
    • 1000 $2.45295
    • 10000 $2.45295
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    Mouser Electronics TRS12N65FB,S1Q 131
    • 1 $5.02
    • 10 $4.91
    • 100 $2.73
    • 1000 $2.28
    • 10000 $2.27
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    Rochester Electronics LLC HGT1S12N60C3

    27A, 600V, UFS N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGT1S12N60C3 Bulk 195
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    • 1000 $1.54
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    Rochester Electronics LLC HGT1S12N60B3

    27A, 600V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGT1S12N60B3 Bulk 221
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    • 1000 $1.36
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    Toshiba America Electronic Components TRS12N65D,S1F

    DIODE ARR SCHOTT 650V 6A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TRS12N65D,S1F Tube
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    Rochester Electronics LLC HGT1S12N60C3D

    24A, 600V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGT1S12N60C3D Bulk 226
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    • 1000 $1.33
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    Find more S12N6 price and stock on Findchips.com

    S12N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, S12N60C3DRS CT ODU ODUCT


    Original     		PDF G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB

    Untitled

    Abstract: No abstract text available
    Text: [ /Title HGTP 12N60 C3R, HGT1 S12N6 0C3RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch HGTP12N60C3R, S12N60C3RS T UCT ROD RODUC P E P T E E OL UT


    Original     		PDF GTP12 HGTP12N60C3R, HGT1S12N60C3RS 12N60 S12N6

    p12n60c3

    Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
    Text: HGTP12N60C3, S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123

    P12N60C3

    Abstract: HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60
    Text: HGTP12N60C3, S12N60C3, S12N60C3S Semiconductor 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, S12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the


    Original     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC P12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60

    Untitled

    Abstract: No abstract text available
    Text: S12N65D SiC Schottky Barrier Diode S12N65D 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features 1 Forward DC current(Per Leg/Both Legs) IF(DC) = 6/12 A (2) Repetitive peak reverse voltage VRRM = 650 V


    Original     		PDF TRS12N65D O-247

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60C3, S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC.

    p12n60c3

    Abstract: S12N60C3 RHRP1560 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C
    Text: HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, S12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the


    Original     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC p12n60c3 S12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C

    p12n60c3

    Abstract: TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 HGTP12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A
    Text: HGTP12N60C3, S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 RHRP1560 HGT1S12N60C3S9A

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC


    Original     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S O-220AB 230ns 150oC O-262AA HGT1S12N60C3

    Untitled

    Abstract: No abstract text available
    Text: S12N65D SiC Schottky Barrier Diode S12N65D 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features 1 Forward DC current(Per Leg/Both Legs) IF(DC) = 6/12 A (2) Repetitive peak reverse voltage VRRM = 650 V


    Original     		PDF TRS12N65D O-247

    p12n60c3

    Abstract: p12n60 HGTP12N60C3 S12N60C3 TA49123 HGT1S12N60C3S HGT1S12N60C3S9A LD26 RHRP1560
    Text: HGTP12N60C3, S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 p12n60 S12N60C3 TA49123 HGT1S12N60C3S9A LD26 RHRP1560

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    p12n60c3

    Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
    Text: HARRIS HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G S12N60C3 and HG S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C

    p12n60c3

    Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
    Text: i n t e HGTP12N60C3, S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123

    p12n60c3

    Abstract: S12N60C3
    Text: HARRIS HGTP12N60C3, S12N60C3, S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, S12N60C3 and S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3