12N60 Search Results

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STMicroelectronics STD12N60M2 MOSFET N-CHANNEL 600V 9A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD12N60M2	Digi-Reel	7,451		1	1 $2.13 10 $1.363 100 $2.13 1000 $0.67539 10000 $0.67539	Buy Now
	STD12N60M2	Cut Tape	7,451		1	1 $2.13 10 $1.363 100 $2.13 1000 $0.67539 10000 $0.67539	Buy Now
	STD12N60M2	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.57311	Buy Now
Mouser Electronics	STD12N60M2					1 $1.83 10 $1.26 100 $0.869 1000 $0.646 10000 $0.563	Get Quote
STMicroelectronics	STD12N60M2				1	1 $1.79 10 $1.24 100 $0.85 1000 $0.69 10000 $0.69	Buy Now
Avnet Silica	STD12N60M2			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STD12N60M2		5,000	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STD12N60DM6 MOSFET N-CH 600V 10A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD12N60DM6	Digi-Reel	2,359		1	1 $2.83 10 $1.832 100 $2.83 1000 $0.93963 10000 $0.93963	Buy Now
	STD12N60DM6	Cut Tape	2,359		1	1 $2.83 10 $1.832 100 $2.83 1000 $0.93963 10000 $0.93963	Buy Now
Mouser Electronics	STD12N60DM6		2,418			1 $2.01 10 $1.59 100 $1.14 1000 $0.87 10000 $0.846	Buy Now
Newark	STD12N60DM6	Bulk	2,462		1	1 $2.18 10 $1.84 100 $1.5 1000 $1.13 10000 $1.04	Buy Now
STMicroelectronics	STD12N60DM6		2,418		1	1 $1.97 10 $1.56 100 $1.12 1000 $0.92 10000 $0.92	Buy Now
Avnet Silica	STD12N60DM6			15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STD12N60DM6			15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STFI12N60M2 MOSFET N-CH 600V 9A I2PAKFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFI12N60M2	Tube	1,487		1	1 $2.42 10 $2.42 100 $2.42 1000 $0.78136 10000 $0.78136	Buy Now
Vishay Siliconix SIHA12N60E-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA12N60E-GE3	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.10174 10000 $1.10174	Buy Now
STMicroelectronics STF12N60M2 MOSFET N-CH 600V 9A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF12N60M2	Tube	949		1	1 $1.93 10 $1.93 100 $1.93 1000 $0.60233 10000 $0.5	Buy Now
Mouser Electronics	STF12N60M2		724			1 $1.53 10 $0.867 100 $0.784 1000 $0.563 10000 $0.5	Buy Now
Newark	STF12N60M2	Bulk			1	1 $1.2 10 $0.993 100 $0.873 1000 $0.8 10000 $0.8	Buy Now
STMicroelectronics	STF12N60M2		724		1	1 $1.45 10 $0.82 100 $0.75 1000 $0.61 10000 $0.61	Buy Now
TME	STF12N60M2				1	1 $1.45 10 $1.26 100 $1 1000 $0.81 10000 $0.81	Get Quote

Avnet Silica	STF12N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF12N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 12N60 price and stock on Findchips.com

12N60 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
12N60	Unisonic Technologies	12 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
12N-60	Inmet	ATTENUATOR	Scan	PDF
12N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N60CD1	IXYS	HiPerFAST IGBT Lightspeed	Original	PDF
12N60D1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N60D1C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N60D1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N-60F	Inmet	ATTENUATOR	Scan	PDF
12N-60M	Inmet	ATTENUATOR	Scan	PDF

12N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12n60c Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N60C O-263 O-220 728B1 transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	12N60C ISOPLUS247TM
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	PDF	12N60 12N60 QW-R502-170
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	PDF	12N60K-MT 12N60K-MT QW-R502-B06
12N60B Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	12N60B O-247 O-247 12N60B
12N60CD1 Abstract: No abstract text available Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600	Original	PDF	12N60CD1 12N60CD1 O-263 O-220
12N60C Abstract: No abstract text available Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	PDF	12N60C O-247 O-247 12N60C
12n60b Abstract: 12n60bd1 12N60BD Text: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	PDF	12N60BD1 O-220 12n60b 12n60bd1 12N60BD
Untitled Abstract: No abstract text available Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N60C O-263 O-220 728B1
12n60a Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	PDF	12N60 12N60 12N60L QW-R502-170 12n60a UTC12N60 12N-60a 12N60B 12N60L 12N60-A 12N60-B
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS 12N60C3DR, 12N60C3DR, 12N60C3DRS CT ODU ODUCT	Original	PDF	G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
12N60CD1 Abstract: 12n60c Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	12N60CD1 728B1 12N60CD1 12n60c
12n60b Abstract: servo motors IXGH12N60B dc motor high torque 12N60 12N60-B Text: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N60B 12n60b servo motors IXGH12N60B dc motor high torque 12N60 12N60-B
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	PDF	12N60K-MT 12N60K-MT O-220F2 QW-R502-B06

Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	PDF	12N60AU1
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	PDF	12N60C ISOPLUS247TM 728B1
12N60l Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	PDF	12N60 12N60 QW-R502-170 12N60l
12n60c Abstract: transistor 12n60c 98503B 12N60 Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	PDF	12N60C O-247 728B1 12n60c transistor 12n60c 98503B 12N60
12n60b Abstract: 12N60-B 98909 Text: IXGA 12N60B IXGP 12N60B HiPerFASTTM IGBT VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	12N60B O-220 with020 728B1 12n60b 12N60-B 98909
12n60 dc Abstract: 12n60 Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	PDF	12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc
IGBT g Abstract: TO263AA Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N60CD1 12N60CD1 O-220 O-263 IGBT g TO263AA
Untitled Abstract: No abstract text available Text: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	12N60CD1
IXGA 12N60C Abstract: No abstract text available Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM	OCR Scan	PDF	12N60C 12N60C O-263 O-220 IXGA 12N60C
Untitled Abstract: No abstract text available Text: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20	OCR Scan	PDF	12N60AU1 Cto150 to150 O-263AA

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STMicroelectronics STD12N60M2

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Vishay Siliconix SIHA12N60E-GE3

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12N60 Datasheets (11)

12N60 Datasheets Context Search

12n60c

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12N60B

12N60CD1

12N60C

12n60b

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12n60a

12n60c

12N60CD1

12n60b

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12N60l

12n60c

12n60b

12n60 dc

IGBT g

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IXGA 12N60C

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