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Vishay Siliconix SIHP12N60E-BE3 MOSFET N-CH 600V 12A TO220AB
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DigiKey	SIHP12N60E-BE3	Tube	346		1	1 $3.4 10 $3.4 100 $3.4 1000 $1.16399 10000 $1.0875	Buy Now
onsemi FQP12N60C MOSFET N-CH 600V 12A TO220-3
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DigiKey	FQP12N60C	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FQP12N60C		1,837		1	1 $1.74 10 $1.74 100 $1.64 1000 $1.48 10000 $1.48	Buy Now
Flip Electronics	FQP12N60C		869			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC FQP12N60C POWER FIELD-EFFECT TRANSISTOR, 1
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DigiKey	FQP12N60C	Bulk			166	1 - 10 - 100 - 1000 $1.81 10000 $1.81	Buy Now
Flip Electronics FQP12N60C MOSFET N-CH 600V 12A TO220-3
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DigiKey	FQP12N60C	Bulk			400	1 - 10 - 100 - 1000 $1.45 10000 $1.45	Buy Now
IXYS Corporation IXGP12N60B IGBT 600V 24A 100W TO220AB
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DigiKey	IXGP12N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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P12N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
p12n60c3 Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123 Text: P12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The P12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123
P12N60C3 Abstract: HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60 Text: P12N60C3, HGT1S12N60C3, HGT1S12N60C3S Semiconductor 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The P12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the	Original	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC P12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60
Untitled Abstract: No abstract text available Text: P12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The P12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC.
p12n60c3 Abstract: S12N60C3 RHRP1560 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C Text: P12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The P12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the	Original	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC p12n60c3 S12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C
p12n60c3 Abstract: TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 HGTP12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A Text: P12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The P12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 RHRP1560 HGT1S12N60C3S9A
Untitled Abstract: No abstract text available Text: P12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC	Original	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S O-220AB 230ns 150oC O-262AA HGT1S12N60C3
p12n60c3 Abstract: p12n60 HGTP12N60C3 S12N60C3 TA49123 HGT1S12N60C3S HGT1S12N60C3S9A LD26 RHRP1560 Text: P12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The P12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 p12n60 S12N60C3 TA49123 HGT1S12N60C3S9A LD26 RHRP1560
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
p12n60c3 Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C Text: HARRIS P12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The P12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
p12n60c3 Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123 Text: i n t e P12N60C3, HGT1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The P12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	OCR Scan	PDF	HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123
P12N60C3 Abstract: P12N60C C110 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 S12N60C3 TA49123 transistor bI 240 Text: HARRIS P12N60C3, HGT1S12N60C3, S E M , HGT1S12N60C3S C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT October 1996 Features Description • 24A, 600V at Tc = 25°C The P12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 230ns HGTP12N60C3 T0-220AB P12N60C3 HGT1S12N60C3 O-262AA S12N60C3 P12N60C3 P12N60C C110 HGT1S12N60C3S HGT1S12N60C3S9A S12N60C3 TA49123 transistor bI 240
p12n60c3 Abstract: S12N60C3 Text: HARRIS P12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The P12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3