Hitachi DSA002779
Abstract: No abstract text available
Text: 2SK1575 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 13 dB, ηD = 65% typ f = 190 MHz • Compact package Suitable for push - pull circuit Outline RFPAK-B 3 4 5 2 1 D D 1. Drain 2. Drain 3. Source 4. Gate
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2SK1575
D-85622
Hitachi DSA002779
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2SK3175A
Abstract: rfpak DSA003640 Hitachi DSA003640
Text: 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G
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2SK3175A
ADE-208-1452
860MHz)
D-85622
D-85619
2SK3175A
rfpak
DSA003640
Hitachi DSA003640
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Untitled
Abstract: No abstract text available
Text: As of January, 2003 2-R1.6 11.7 ± 1.0 15.4 ± 0.3 15.6 ± 0.3 3.2 ± 0.3 9.6 ± 0.3 22.8 ± 0.5 5.67 ± 0.5 4.14 ± 0.3 2.5 ± 0.3 0.1 26.0 ± 0.5 3.14 ± 0.3 C1.0 12.8 ± 0.3 16.8 ± 0.5 (0.5) Unit: mm Package Code JEDEC JEITA Mass (reference value) RFPAK-G
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ f = 200 MHz • Compact package Suitable for push - pull circuit Outline RFPAK-B 3 4 5 2 1 D D G G S 1. Drain 2. Drain 3. Source
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2SK1999
D-85622
Hitachi DSA002780
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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2C10
Abstract: No abstract text available
Text: As of January, 2003 0.5 29.6 ± 0.5 2-R1.6 11.7 ± 1.0 15.4 ± 0.3 3.2 ± 0.3 2-C1.0 Unit: mm 12.8 ± 0.3 28.4 ± 0.3 9.6 ± 0.3 13.0 ± 0.3 35.6 ± 0.5 Package Code JEDEC JEITA Mass (reference value) 5.67 ± 0.5 4.14 ± 0.3 3.14 ± 0.3 2.5 ± 0.3 (0.1)
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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2sk317
Abstract: rfpak 2SK3175A
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
D-85619
2sk317
rfpak
2SK3175A
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2sk3174
Abstract: 2SK3174A DSA003640
Text: 2SK3174A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1451 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit
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2SK3174A
ADE-208-1451
860MHz)
D-85622
D-85619
2sk3174
2SK3174A
DSA003640
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PT740 AB
Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
Text: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
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ADE-410-001J
March/2002
PT740 AB
095G
Unitechno
rfpak
fuji semiconductors manual
652B0082211-002
BP-108
EDR7315
QP4-064050-002-A
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hitachi j50
Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
hitachi j50
2SK1168
HA16116 "cross reference"
TRANSISTOR MARKING YB 826
ADE-408
GG 84
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2sk1058 2SJ162
2sj177
2SJ182 equivalent
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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rfpak
Abstract: 2SK3174 2SK3174A
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
D-85619
rfpak
2SK3174
2SK3174A
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Untitled
Abstract: No abstract text available
Text: 2SK2217 Silicon N-Channel MOS FET HITACHI ADE-208-347A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 10 dB , Pout = 60 W, r|D = 55% typ f = 860 M Hz • Compact package Outline ; RFPAK-C 3 _
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2SK2217
ADE-208-347A
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OS492
Abstract: 2SK1575
Text: 2SK1575 Silicon N-Channel MOS FET HITACHI Application V H F am plifier Features • H igh gain, high efficiency P G = 13 dB, r|D = 65% typ f = 190 M H z • C om pact package Suitable for push - pull circuit Outline RFPAK-B 4 D 3 1. Drain 2. Drain 3. Source
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2SK1575
OS492
2SK1575
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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2SK318
Abstract: No abstract text available
Text: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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0013D35
l75MH
l75MHi;
2SK318
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2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
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2SK1151
2SK1152
2SK1862
2SK1863
2SK1155
2SK1157
2SK1313
2SK1314
2SK1540
2SK1541
2SK975 equivalent
k2796
equivalent transistor 2sk
POWER MOS FET 2sj 2sk
.model 2SK216
TRANSISTOR 2SK 1180
SK1626
2SK215 equivalent
DRUM DRIVER
2sj44
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5252 F 1108
Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Text: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
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O-126M
12IFP-8DA
24Sfc
2025R
2026R
2027R
2029R
2031T
5252 F 1108
4550J
TO220FM
12015C
5252 F 1104
0345A
msp18
E1113
K2613
SP1211
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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2SK317
Abstract: HF VHF power amplifier 2sk317 hitachi k317
Text: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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2SK317
100MHz;
I75MH>
2SK317
HF VHF power amplifier
2sk317 hitachi
k317
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2SJ56 2sk176
Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share
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2SK176
2SJ56
2SK220
2SK221
2SK258
2SK259
2SK260
2SK1056
2SJ56 2sk176
2sJ50 mosfet
Hitachi 2sk176 2sj56
2sk133 2Sj48
2sk1058 2SJ162
transistor 2sj162
2SJ56 HITACHI
2SK1058 MOSFET
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2sk408
Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB
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HA21008
HA22012
HA22022
HA22016
MSP-18
HA21001MS
16dBtyp
1SD1133
2SD1134
2SD1135
2sk408
2SK2794
2sk409
2SK1999
ha22002
2SD669A
2SK2595
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