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    2SJ44 Search Results

    2SJ44 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ448-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET Visit Renesas Electronics Corporation
    2SJ449-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
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    2SJ44 Price and Stock

    NEC Electronics Group 2SJ449

    POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 250V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ449 1,400
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
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    Component Electronics, Inc 2SJ449 53
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    Others 2SJ449

    POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 250V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ449 69
    • 1 $6
    • 10 $3
    • 100 $2.6
    • 1000 $2.6
    • 10000 $2.6
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    2SJ44 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ44 InterFET P-Channel silicon junction field-effect transistor Original PDF
    2SJ44 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ44 NEC FET(Junction type) AF low noise amplification Original PDF
    2SJ44 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ44 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ44 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ44 Unknown FET Data Book Scan PDF
    2SJ440 Toshiba Original PDF
    2SJ440 Toshiba TRANS MOSFET P-CH 180V 9A 3(2-16F1B) Original PDF
    2SJ440 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ440 Toshiba P-Channel MOSFET Scan PDF
    2SJ440 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
    2SJ440-Y Toshiba Silicon P-Channel MOS Type FET Scan PDF
    2SJ440-Y Toshiba P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) Scan PDF
    2SJ440-Y Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
    2SJ443 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ443 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original PDF
    2SJ443 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ448 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SJ448 NEC Switching P-Channel Power MOS FET Original PDF

    2SJ44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sj172

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ443 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    PDF 2SJ443 O-220CFM D-85622 2sj172 Hitachi 2SJ Hitachi DSA001651

    2SJ448

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. PART NUMBER PACKAGE 2SJ448 Isolated TO-220


    Original
    PDF 2SJ448 2SJ448 O-220 O-220)

    2SJ440

    Abstract: Toshiba 2SJ
    Text: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Maximum Ratings (Ta = 25°C)


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    PDF 2SJ440 2SJ440 Toshiba 2SJ

    2SJ449

    Abstract: m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. in millimeters 4.5 ±0.2


    Original
    PDF 2SJ449 2SJ449 m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134

    2sk152 equivalent

    Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
    Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P


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    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363

    2SJ448

    Abstract: IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ448 is P-Channel MOS Field Effect Transistor de- in millimeters signed for high voltage switching applications. 4.5 ±0.2


    Original
    PDF 2SJ448 2SJ448 O-220 IEI-1213 MEI-1202 MF-1134

    2SJ175

    Abstract: 2SJ172 2SJ443
    Text: 2SJ443 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current 4 V Gate drive can be driven from 5 V source Suitable for Switching regulator, DC – DC


    Original
    PDF 2SJ443 220CFM 2SJ172, 2SJ175 2SJ175 2SJ172 2SJ443

    toshiba marking code transistor

    Abstract: 2SJ440 Toshiba 2SJ
    Text: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ440 2-16F1B toshiba marking code transistor 2SJ440 Toshiba 2SJ

    2SK146

    Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
    Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P


    Original
    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44

    2SJ448

    Abstract: IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ448 is P-Channel MOS Field Effect Transistor de- in millimeters signed for high voltage switching applications. 4.5 ±0.2


    Original
    PDF 2SJ448 2SJ448 O-220 IEI-1213 MEI-1202 MF-1134

    Untitled

    Abstract: No abstract text available
    Text: 2SJ443 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan
    PDF 2SJ443 2SJ172, 2SJ175

    nec 2sk163

    Abstract: 2sk163 2SJ44 2sk163 transistor 2sk163 nec transistor 2sk163 VOS-10 V. 9014 c SC-43A 9014 transistor
    Text: NEC P-CHANNEL JUNCTION FIELD-EFFECT T R A N SIST O R ELECT RO N D EVICE D E SC R IP T IO N 2SJ44 The 2SJ44 n designed for use in driver stage of A F low noise P A C K A G E D IM E N S IO N S amplifier. •n millimeter* inch« FEATURES • Low Noise Figure


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    PDF 2SJ44 2SJ44 2SK163 SC-43A Vqs-20 nec 2sk163 2sk163 2sk163 transistor 2sk163 nec transistor 2sk163 VOS-10 V. 9014 c SC-43A 9014 transistor

    transistor j449

    Abstract: fet nec j449 transistor nec j449 nec j449
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2S J449 is P-C hannel M O S Field E ffect T ra n s is to r d e ­ PACKAGE DIMENSIONS sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .


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    PDF 2SJ449 transistor j449 fet nec j449 transistor nec j449 nec j449

    2sk152 equivalent

    Abstract: 2SJ44 2SK113 2SK152
    Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters


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    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152

    Untitled

    Abstract: No abstract text available
    Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


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    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage :V d S S = —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SJ440-Y

    transistor nec j449

    Abstract: J449 nec j449 transistor j449 j449 mos fet J449 fet j449 nec fet nec j449 j449 transistor 2sj44
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-C hannel MOS Field E ffect T ra n s is to r de­ PACKAGE DIMENSIONS sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .


    OCR Scan
    PDF 2SJ449 2SJ449 transistor nec j449 J449 nec j449 transistor j449 j449 mos fet J449 fet j449 nec fet nec j449 j449 transistor 2sj44

    2SJ440

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y AUDIO FREQUENCY POWER AMPLIFIER APPLICATION U nit in mm 1 5 .8 ± 0 .5 • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SJ440-Y --180V 2-16F1B 2SJ440

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S J448 is P-C hannel M O S Field E ffect T ra n s is to r d e ­ in m illim eters sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .


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    PDF 2SJ448

    J449

    Abstract: transistor nec j449 nec j449 j449 mos fet transistor j449 fet nec j449 D10030 J449 fet 2SJ449 aaat
    Text: M O S fé S IM S b m h 7 > V * $ M O S Field Effect T ra n sisto r 2SJ449 M O S FET I l f f l 2SJ449t ëP31i ’ * ; MÊÉâ / \ " 9 - MOS FETT, I i Œ ? ^ - f -7 51 > M Y -y ^ > ? ' J 3 É tC ftiS T -1 -0 ¡f# m 0250 V t ï t iiJ Œ T 'fS * > f f i â t T'T o


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    PDF 2SJ449 2SJ449liP31i' MP-45F O-220) D10030JJ1V0DS00 J449 transistor nec j449 nec j449 j449 mos fet transistor j449 fet nec j449 D10030 J449 fet 2SJ449 aaat

    nec 2sk163

    Abstract: 2SK163 2SJ44 2SK163 TO92 2sk163 nec 2sk163 transistor 2SJ44 2SK163 SC-43A J22686 TC-3344A C 9014 transistor PA33 SC-43A
    Text: NEC P-CHANNEL JUN C TIO N FIELD-EFFECT TRANSISTO R ELECTRON DEVICE 2SJ44 DESCRIPTION The 2SJ44 is designed fo r use in driver stage o f AF low noise PACKAGE D IM ENSIONS am plifier. in m illim eters inches • Low Noise Figure FEATURES 5.2 MAX. en=1.5 n V /V H z TYR. (V DS= - 1 0 V , l D= —1.0 m A, f =1.0 kHz)


    OCR Scan
    PDF 2SJ44 2SJ44 S20mV 2SK163 J22686 TC-3344A nec 2sk163 2SK163 2SK163 TO92 2sk163 nec 2sk163 transistor 2SJ44 2SK163 SC-43A J22686 TC-3344A C 9014 transistor PA33 SC-43A

    toshiba lot number type

    Abstract: 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ
    Text: T O S H IB A 2SJ440-Y 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SJ440-Y toshiba lot number type 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ

    IFN152

    Abstract: 2SJ44 2SK152 2SK113 2SK363 NJ450 IFP44
    Text: 9 -9 7 E 3 SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Japanese 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 - 20 V 0.1 ( -1 0 V ) 1.0 ( - 30 V)


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    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450

    T03PN

    Abstract: 2N3820 2SJ109 2SJ74 2SJ201 2SJ306 j177 2SJ449 T092 BUZ906
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-FET b an^aBMTHOM nop^flKe Kofl: 2SJ201 2N3820 2SJ306 2SJ449 2SJ307 2SJ74 2SJ109 2N5460 2N5461 2SJ103 BUZ906 J174 J177 VdSS [B] -200 -20 -250 -250 -250 -25 -30 -40 -40 -50 -8


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    PDF 2SJ201 T03PN 2N3820 2SJ306 T0220 2SJ449 2SJ307 2SJ74 T03PN 2SJ109 j177 T092 BUZ906