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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A

    rjp60f4

    Abstract: RJP60F
    Text: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A rjp60f4 RJP60F