SMD ST MICROELECTRONICS
Abstract: NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR electric assisted power steering system motor ST Microelectronics Bipolar Transistor AN1233 M243 M250 LDMOS
Text: AN1233 Application note LDMOS packages Introduction LDMOS technology recently implemented at ST is an important step forward, combining technological and environmental progress. In the basic LDMOS structure Figure 1 , a pepitaxial layer is grown on an p-type substrate to form a larger drain region. An important
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AN1233
SMD ST MICROELECTRONICS
NV SMD TRANSISTOR
ST MAKE SMD TRANSISTOR
electric assisted power steering system motor
ST Microelectronics Bipolar Transistor
AN1233
M243
M250
LDMOS
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Untitled
Abstract: No abstract text available
Text: Systems in Silicon Contact Information: Productivity Enhancement Products Application of Innovative Technology From Start to Finish 949-348-4200 26072 Merit Circle, Suite 109 Laguna Hills, CA 92653 E-mail: URL: sales@pepinc.com www.pepinc.com AMD Embedded Products Division, FusionE86 Support
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FusionE86
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Untitled
Abstract: No abstract text available
Text: Systems in Silicon Contact Information: Productivity Enhancement Products Application of Innovative Technology From Start to Finish 949-348-4200 26072 Merit Circle, Suite 109 Laguna Hills, CA 92653 E-mail: URL: sales@pepinc.com www.pepinc.com AMD Embedded Products Division, FusionE86 Support
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FusionE86
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CMOS
Abstract: No abstract text available
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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sm 6136 b
Abstract: f2145bfa20 SM 6136 003A MARKING TRANSISTOR f2145bf f2145bfa 80-port marking eb5 HD64F2140BV HD64F2141BV
Text: REJ09B0300-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2140B Group Hardware Manual
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REJ09B0300-0300
H8S/2140B
16-Bit
Family/H8S/2100
H8S/2161B
H8S/2160B
H8S/2141B
H8S/2140B
H8S/2145B
HD64F2161BV
sm 6136 b
f2145bfa20
SM 6136
003A MARKING TRANSISTOR
f2145bf
f2145bfa
80-port
marking eb5
HD64F2140BV
HD64F2141BV
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RSN 315 H 42
Abstract: RSN 314 H 41 rsn 315 LADR2 RSN 310 R 36 rsn 313 HFD27 HFD23 addressing modes 8086 AY 5 4700
Text: REJ09B0429-0100 16 H8S/2164 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2164 Rev.1.00 Revision Date: Mar. 17, 2008 R4F2164 Rev. 1.00 Mar. 17, 2008 Page ii of xl Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate
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REJ09B0429-0100
H8S/2164
16-Bit
H8S/2400
H8S/2164
R4F2164
RSN 315 H 42
RSN 314 H 41
rsn 315
LADR2
RSN 310 R 36
rsn 313
HFD27
HFD23
addressing modes 8086
AY 5 4700
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Untitled
Abstract: No abstract text available
Text: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the
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individual53
B1201,
KMPD9004E03
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GM1206PKVX-A
Abstract: kd1204pkvx sunon gm1206pkvx-a KD1206PFV1 GM1204PKv2 KD1204PKV1 KD0502PFB3-8 GM1204PKbx GM1204PKVX SUNON KD1206PTV1
Text: SUNON Magnetic Levitation System MS Fan Blower Cap Fan Dish Fan SUNON Magnetic Plate the Magic of Magic Magnetic Plate, the Heart of SUNON MS Design Tells You the Secret Why a Motor Could Operate Defect-free Magnetic Plate, SUNON's Exclusive Innovation U.S. PAT. 6,097,120
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sm 6136 b
Abstract: F2140B MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SM 6136 60227-4 F2145B
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2140B
sm 6136 b
F2140B
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
SM 6136
60227-4
F2145B
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Sunon DP200A 2123HSL
Abstract: SF23080AT 12025 fan SF11580AT Sunon dp201a Sunon DP200A 2123xst 1123XSL 2123HBT 2123XSL SP100A
Text:
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17x17x8mm
20x20x8mm
20x20x10mm
25x25x6mm
25x25x10mm
30x30x28mm
30x30x6mm
30x30x10mm
35x35x10m
40x40x6mm
Sunon DP200A 2123HSL
SF23080AT
12025 fan
SF11580AT
Sunon dp201a
Sunon DP200A 2123xst
1123XSL
2123HBT
2123XSL
SP100A
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AC/ACT CMOS family characteristics
Abstract: AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter AN-6525 HARRIS PACKAGE LOGIC FCT scr 2 22m four-layer diode act240 harris
Text: Technical Overview Features AC/ACT Family Features The Harris AC/ACT series of Advanced High Speed CMOS Integrated Circuits is comprised of a broad range of logic types equivalent in performance and speed to FAST, AS Advanced Schottky , and S (Schottky) bipolar types, but
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CD54/74ACTXXX-Series
AC/ACT CMOS family characteristics
AN6525
Difference between LS, HC, HCT devices
74 Series IC Manual
plotter
AN-6525
HARRIS PACKAGE LOGIC FCT
scr 2 22m
four-layer diode
act240 harris
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IDLN100D10
Abstract: ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS
Text: 2.0 µm 5V/40V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 5V control logic 40V transistors Epi wafers Thick gate oxide State of the art double metal technology [Ti/TiN/Al/TiN sandwich] Single or double poly Hi-res poly option [10kΩ/ ]
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V/40V
IDLN100D10
ISO14000
100D10
pepi c
ISO-14000
VTN100D10
zarlink PACKING
50x-2
Zarlink CROSS
analog devices 0.8 -2.0um CMOS
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2SD1469
Abstract: 2SD1920
Text: Is "7 > V 7, $ / I ransistors 2SD1469/2SD1920 2SD 1469 2 5 D 1 9 2 0 Power Am pEpitaxial Planar NPN Silicon Transistors • ^ f f ^ ^ l l / D i m e n s i o n s U n it: mm • ¥s& 1) ti& VCE (sat)=6m V(at 1mA/0.1mA) 2) Æ « J Œ * » a t K 7 - f T' fa -5 0
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2SD1469/2SD1920
2SD1469
2SD1920
2SD1920
A/50mA
V/100mA
2SD1469
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NT30C
Abstract: No abstract text available
Text: R e s s e 18 2 PTC ; , 7/1/8 □ HM8 + / - 107. PEPI8TAN88 M U L T I F' LI EF: _ -55 5 00 i -i - 1 P 78 0 BEO •- 0 1 , 00 LL £ 8 z 50 1,18 u 75 1 , 87 K 10 0 1 , 58 □ P E P A T I N 8 F: A N 8 E : - 5 5 T 8 1 0 0 8 PTGR AE E RANCE ! - 0 5 TE 1 5 0 8 *THERMAL T IM E PGNPTALIT: 8 0 P88
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PP35C:
EATINGn35WP35
C-F-G3G48
NT30C
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Untitled
Abstract: No abstract text available
Text: R e s s e 1 4 7 0 0 GHM5 + X-5/1 PTC ; ,7/1/0 □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 CTOPAGG RANCE : - 0 5 TE 150 0 PEPICTANCE C _ -55 -1 5 iì + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N
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L-R-23643
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pepi c
Abstract: MRF426
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.
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MRF426
pepi c
MRF426
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Untitled
Abstract: No abstract text available
Text: R e s s e 14700 GHM5 PTC ; , 771/3 + X- 371 PEPICTANCE □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 3 T0 P A GG RANCE : - 0 5 TE 150 0 C MUCTIPPIEF: _ + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N
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L-R-23643
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Untitled
Abstract: No abstract text available
Text: R e s s e 12700 EHM5 + X-3/1 P T C ; , 7/1/3 PEPICTANCE □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 3 T0 P A GG RANCE : - 0 5 TE 150 0 C MUCTIPPIEF: + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N
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L-R-23643
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Untitled
Abstract: No abstract text available
Text: R e s s e 1 2 7 0 0 GHM5 + X-5/1 PTC ; ,7/1/0 □ F O R A T I N 0 F: A N 0 0 : - 5 5 T □ 1 0 0 CTOPAGG RANCE : - 0 5 TE 150 0 PEPICTANCE C _ -55 -1 5 iì + T H E P M A L T I M O C D N C T A N T : 3 0 C E O , MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/ 3 M I N
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L-R-23643
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Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
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1x10u
1x109
1x101
1x108
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Untitled
Abstract: No abstract text available
Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro
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0D137Ã
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TD 6905 S
Abstract: ci 7430 TD 6905
Text: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >
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1000PF,
CJ6-J35=
350uH
SI-30103
TD 6905 S
ci 7430
TD 6905
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Untitled
Abstract: No abstract text available
Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as
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1x106
1x1014cm
HC685
IL-l-38535
1x109
1x101
36-Lead
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MC 2882
Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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175MHÃ
MC 2882
2SC2862
MC 342 transistor
210B
MC 2871
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