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Samsung Electro-Mechanics CL31X106KAHNNNE CAP CER 10UF 25V X6S 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CL31X106KAHNNNE	Digi-Reel	147,144		1	1 $0.32 10 $0.188 100 $0.1181 1000 $0.08142 10000 $0.08142	Buy Now
	CL31X106KAHNNNE	Cut Tape	147,144		1	1 $0.32 10 $0.188 100 $0.1181 1000 $0.08142 10000 $0.08142	Buy Now
	CL31X106KAHNNNE	Reel	144,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.04953	Buy Now
Mouser Electronics	CL31X106KAHNNNE		133,641			1 $0.32 10 $0.135 100 $0.091 1000 $0.056 10000 $0.048	Buy Now
Samsung Electro-Mechanics CL21X106KPCLRNC CAP CER 10UF 10V X6S 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CL21X106KPCLRNC	Digi-Reel	76,618		1	1 $0.2 10 $0.113 100 $0.0693 1000 $0.0463 10000 $0.0463	Buy Now
	CL21X106KPCLRNC	Cut Tape	76,618		1	1 $0.2 10 $0.113 100 $0.0693 1000 $0.0463 10000 $0.0463	Buy Now
	CL21X106KPCLRNC	Reel	68,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.03498	Buy Now
Avnet Americas	CL21X106KPCLRNC	Reel	32,000	20 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.02268	Buy Now
Mouser Electronics	CL21X106KPCLRNC		169,294			1 $0.2 10 $0.08 100 $0.052 1000 $0.046 10000 $0.029	Buy Now
Samsung Electro-Mechanics CL21X106MOQNNNE CAP CER 10UF 16V X6S 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CL21X106MOQNNNE	Reel	68,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.03278	Buy Now
Mouser Electronics	CL21X106MOQNNNE		47,716			1 $0.19 10 $0.077 100 $0.05 1000 $0.044 10000 $0.03	Buy Now
KEMET Corporation T521X106M063ATE050 CAP TANT POLY 10UF 63V 2917
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T521X106M063ATE050	Digi-Reel	3,829		1	1 $6.23 10 $5.16 100 $3.97 1000 $3.97 10000 $3.97	Buy Now
	T521X106M063ATE050	Cut Tape	3,829		1	1 $6.23 10 $5.16 100 $3.97 1000 $3.97 10000 $3.97	Buy Now
	T521X106M063ATE050	Reel	3,500		500	1 - 10 - 100 - 1000 $3.18 10000 $3.13	Buy Now
Avnet Americas	T521X106M063ATE050	Ammo Pack		54 Weeks, 4 Days	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	T521X106M063ATE050	Reel		54 Weeks, 4 Days	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	T521X106M063ATE050		2,927			1 $6.23 10 $5.09 100 $3.97 1000 $3.12 10000 $3.08	Buy Now
TTI	T521X106M063ATE050	Reel	3,000		500	1 - 10 - 100 - 1000 $3.12 10000 $3	Buy Now
	T521X106M063ATE050	Cut Tape	310		10	1 - 10 $4.86 100 $4.86 1000 $4.86 10000 $4.86	Buy Now
TME	T521X106M063ATE050				500	1 - 10 - 100 - 1000 $4.07 10000 $4.07	Get Quote

Avnet Abacus	T521X106M063ATE050	Reel	500	20 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
KEMET Corporation T491X106K050AT CAP TANT 10UF 10% 50V 2917
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T491X106K050AT	Digi-Reel	3,604		1	1 $2.5 10 $2.09 100 $1.69 1000 $1.69 10000 $1.69	Buy Now
	T491X106K050AT	Cut Tape	3,604		1	1 $2.5 10 $2.09 100 $1.69 1000 $1.69 10000 $1.69	Buy Now
	T491X106K050AT	Reel	3,000		500	1 - 10 - 100 - 1000 $1.13625 10000 $1.13625	Buy Now
Avnet Americas	T491X106K050AT	Reel		12 Weeks	500	1 - 10 - 100 - 1000 $1.09084 10000 $1.0544	Buy Now
Mouser Electronics	T491X106K050AT		9,977			1 $2.24 10 $1.99 100 $1.69 1000 $1.13 10000 $1.13	Buy Now
Newark	T491X106K050AT	Reel	1,000		500	1 - 10 - 100 - 1000 $1.1 10000 $0.969	Buy Now
	T491X106K050AT	Cut Tape	30		1	1 $2.49 10 $2.1 100 $1.67 1000 $1.46 10000 $1.46	Buy Now
RS	T491X106K050AT	Bulk			500	1 - 10 - 100 - 1000 $1.47 10000 $1.4	Get Quote

Bristol Electronics	T491X106K050AT		530		3	1 - 10 $1.6875 100 $1.4062 1000 $0.7875 10000 $0.7875	Buy Now
	T491X106K050AT		30		7	1 - 10 $0.7313 100 $0.4753 1000 $0.4753 10000 $0.4753	Buy Now
TTI	T491X106K050AT	Reel	22,500		500	1 - 10 - 100 - 1000 $1.13 10000 $1.13	Buy Now
TME	T491X106K050AT		579		1	1 $3.11 10 $3.11 100 $2.15 1000 $1.6 10000 $1.6	Buy Now
Avnet Abacus	T491X106K050AT	Reel		9 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1X106 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor m285 Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650 Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
hx6228 Abstract: MIL-PRF38535 Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)	Original	PDF	HX6228 1x106 1x1011 1x1012 1x10-10 32-Lead hx6228 MIL-PRF38535
238A792 Abstract: No abstract text available Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792
HXNV0100 Abstract: No abstract text available Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109	Original	PDF	HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000
Untitled Abstract: No abstract text available Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)	Original	PDF	1x106 1x1014 1x109 1x1011 1x10-10 HX6256 28-Lead MIL-STD-1835,
190A325 Abstract: C710 D 5962h96877 Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	190A325 198A592 5962H96877 40-Lead 32-Lead 1x106 1x1014 1x109 1x10-11 C710 D 5962h96877
S4 46 Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833 Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	PDF	225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
CQFj 44 Abstract: CQFJ 68 lead CQFJ Text: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through	Original	PDF	WS128K32-25G2SMX 128Kx32 1x106 1x1014 1x1011 1x1012 1x10-10 WS128K32-25AR 128Kx32 CQFj 44 CQFJ 68 lead CQFJ
HX6256 Abstract: D-10 Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)	Original	PDF	HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10
HLX*8 Abstract: HLX6228 Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)	Original	PDF	HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead HLX*8 HLX6228
Untitled Abstract: No abstract text available Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process	OCR Scan	PDF	HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 \|im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)	OCR Scan	PDF	HX6228 1x106 1x101 1x109 32-Lead
Untitled Abstract: No abstract text available Text: U ltra S table OCXOs Series 5000 FEATURES • Low aging rate day year to 1 X10,n to 1x106 • Excellent temperature ± 3 x 1 0 3 stability 0 to 60°C • Frequency range 4 to 20 MHz - m — Iranlie/ 1/ -I 4— ^ Pin out 50 A Note: Dimensions in mm SPECIFICATIONS	OCR Scan	PDF	1x106 TM47320
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 \|iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)	OCR Scan	PDF	1x106ra 1x109 1x101 28-Lead 36-Lead HX6656 MIL-STD-1835, CDIP2-T28

Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)	OCR Scan	PDF	1x106rad 1x101 1x109 HX6256 28-Lead GQG1711
HR2340 Abstract: sram pull down honeywell memory sram Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec	OCR Scan	PDF	1x106 1x103rad 1x1012rad HR2340 HR2340 sram pull down honeywell memory sram
Untitled Abstract: No abstract text available Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as	OCR Scan	PDF	1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead
5962-95845 Abstract: HX6356 Text: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 \|a,m Process (Leff= 0.6 \|a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)	OCR Scan	PDF	1x106rad 1x101 HX6356 36-Lead 5962-95845 HX6356
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)	OCR Scan	PDF	HX6256 1x106rad 1x1014cm 1x109 1x101 28-Lead 4551A72
Untitled Abstract: No abstract text available Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 \|xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)	OCR Scan	PDF	HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105
HX6356 Abstract: No abstract text available Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 nm Process (Le)= 0.6 urn) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiOs)	OCR Scan	PDF	1x106 1x101 HX6356 36-Lead HX6356
HX2160 Abstract: No abstract text available Text: Honeywell HX2000 RICMOS" — SOI GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm R IC M O S IV SOI Process • Total Dose Hardness of >1x106 rad S i02 • Array Sizes from 10K to 336K Available Gates (Raw) Dose Rate Upset Hardness: >1x10'°rad(Si)/sec (5V)	OCR Scan	PDF	1x106 1x109 HX2000 HX2160
smd transistor NJ Abstract: No abstract text available Text: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 \|a,m Process (Leff= 0.6 \|a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)	OCR Scan	PDF	1x106 1x101 1x109 HX6256 28-Lead smd transistor NJ
Untitled Abstract: No abstract text available Text: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02	OCR Scan	PDF	WS128K32-25XMRH 128Kx32 1x106 1x1014crrv2 128Kx32; WS128K32-25XMRH 128K32 128KX32

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1X106 Price and Stock

Samsung Electro-Mechanics CL31X106KAHNNNE

Samsung Electro-Mechanics CL21X106KPCLRNC

Samsung Electro-Mechanics CL21X106MOQNNNE

KEMET Corporation T521X106M063ATE050

KEMET Corporation T491X106K050AT

1X106 Datasheets Context Search

transistor m285

hx6228

238A792

HXNV0100

Untitled

190A325

S4 46

CQFj 44

HX6256

HLX*8

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HR2340

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5962-95845

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HX6356

HX2160

smd transistor NJ

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